A semiconductor device includes a first die, a second die, a first redistribution layer (RDL) structure and a connector. The RDL structure is disposed between the first die and the second die and is electrically connected to the first die and the second die and includes a first polymer layer, a second polymer layer, a first conductive pattern and an adhesion promoter layer. The adhesion promoter layer is between and in direct contact with the second polymer layer and the first conductive pattern. The connector is disposed in the first polymer layer and in direct contact with the second die and the first conductive pattern.

An electronic package is provided. The electronic package includes an electronic component and a leadframe. The electronic component has a passive surface. The leadframe includes a first patterned part under the electronic component and configured to provide a power to the electronic component by the passive surface.

Semiconductor device includes: semiconductor elements electrically connected in parallel; pad portion electrically connected to the semiconductor elements; and terminal portion electrically connected to the pad portion. As viewed in thickness direction, the semiconductor elements are aligned along first direction perpendicular to the thickness direction. The pad portion includes closed region surrounded by three line segments each formed by connecting two of first, second and third vertex not disposed on the same straight line. As viewed in thickness direction, the first vertex overlaps with one semiconductor element located in outermost position in first sense of the first direction. As viewed in the thickness direction, the second vertex overlaps with one semiconductor element located in outermost position in second sense of the first direction. As viewed in the thickness direction, the third vertex is located on perpendicular bisector of the line segment connecting the first and second vertex.

A semiconductor device includes: a semiconductor element having an element main surface and an element back surface spaced apart from each other in a thickness direction and including a plurality of main surface electrodes arranged on the element main surface; a die pad on which the semiconductor element is mounted; a plurality of leads including at least one first lead and at least one second lead and arranged around the die pad when viewed in the thickness direction; a plurality of connecting members including a first connecting member and a second connecting member and configured to electrically connect the plurality of main surface electrodes and the plurality of leads; and a resin member configured to seal the semiconductor element, a part of the die pad, parts of the plurality of leads, and the plurality of connecting members and having a rectangular shape when viewed in the thickness direction.

A semiconductor package comprises a leadframe with a first lead and a second lead where the first lead has a larger size compared to the second lead. The lead frame further comprises a die attach area on which a die with one or more bond pads of the die is attached and where the first lead and the second lead extend outwardly from the die attach area. The one or more bond pads are associated with the first lead and a plurality of bond wires is arranged between a bond pad and the first lead.

An electronic structure, an electronic package and a manufacturing method thereof are provided, in which a carrier and an adhesive layer are used to support or fix the electronic structure and the electronic package, and double carriers are used to support or fix the electronic structure and the electronic package, thereby avoiding the warpage problem of the electronic structure and the electronic package.

A package comprising a metallization portion; an integrated device comprising a plurality of pillar interconnects, wherein the integrated device is coupled to the metallization portion through the plurality of pillar interconnects; and an encapsulation layer at least partially encapsulating the integrated device, wherein the encapsulation layer is coupled to the metallization portion.

A semiconductor package has a first semiconductor package which includes a first redistribution structure, a first semiconductor chip on a lower surface of the first redistribution structure, a first encapsulant on at least a portion of the first semiconductor chip, a second redistribution structure on the first encapsulant, and a conductive post electrically connecting the first redistribution structure and the second redistribution structure through the first encapsulant; and a second semiconductor package which is on an upper surface of the first redistribution structure and comprises a third redistribution structure, a second semiconductor chip on the third redistribution structure, and a second encapsulant on at least a portion of the second semiconductor chip, wherein the first encapsulant integrally covers each of a lower surface and a side surface of the first semiconductor chip.

An interconnect board includes a thermally enhanced cavity substrate, an electronic component, a crack-inhibiting dielectric layer and a circuitry layer. The cavity in the thermally enhanced cavity substrate is defined by a heat conduction surface of a first conductive island and inner surrounding sidewalls of a stress-relief resin layer. The thermally enhanced cavity substrate further includes electrically conductive posts as vertical electrical conduction channel. The electronic component in the cavity is attached onto the heat conduction surface and covered and laterally surrounded by the crack-inhibiting dielectric layer. The circuitry layer can provide electrical connections between the electronic component and the electrically conductive posts. For applications involving electrical components with high thermal demand (such as power chips), the first conductive island may further include a metallized segment in contact with the bottom surface of the electronic component to improve thermal management.

Systems, devices, and methods for high die stack packages with secondary interposers are provided herein. A die stack package can include a first substrate, a first die stack carried by the first substrate, a second die stack carried by the first substrate, a second substrate carried by the first die stack and the second die stack, a third die stack carried by the second substrate, a fourth die stack carried by the second substrate, and one or more vertical wires electrically coupling the first substrate and the second substrate. Each of the first, second, third, and fourth die stacks can include a plurality of dies stacked in a cascading arrangement. In some embodiments, the first and second die stacks are each electrically coupled to the first substrate. In some embodiments, the first and second die stacks are each electrically coupled to the second substrate.