H10W74/016

Semiconductor device and method of forming the same

A semiconductor device includes a first die, a second die, a first redistribution layer (RDL) structure and a connector. The RDL structure is disposed between the first die and the second die and is electrically connected to the first die and the second die and includes a first polymer layer, a second polymer layer, a first conductive pattern and an adhesion promoter layer. The adhesion promoter layer is between and in direct contact with the second polymer layer and the first conductive pattern. The connector is disposed in the first polymer layer and in direct contact with the second die and the first conductive pattern.

System, electronic device and package with vertical to horizontal substrate integrated waveguide transition and horizontal grounded coplanar waveguide transition

An electronic device includes a multilevel package substrate with a horizontal substrate integrated waveguide (SIW) with a channel, a vertical SIW with an opening, a grounded coplanar waveguide (GCPW), a first transition between the horizontal SIW and the GCPW, and a second transition between the horizontal and vertical SIWs, as well as a semiconductor die having conductive structures coupled to a signal trace and a ground trace of the GCPW, and a package structure that encloses the semiconductor die and a portion of the multilevel package substrate.

Method of manufacturing a semiconductor package and semiconductor package manufactured by the same
12519082 · 2026-01-06 · ·

A method of manufacturing a semiconductor package of stacked semiconductor chips includes forming a reverse wire bond by bonding one end of a reverse wire to a chip pad of the second-highest semiconductor chip of the stacked semiconductor chips and connecting the other end of the reverse wire to a conductive bump on a chip pad of the uppermost semiconductor chip of the stacked semiconductor chips. The method also includes molding the stacked semiconductor chips with the reverse wire bond using a mold layer. The method further includes processing the mold layer to expose the conductive bump and the other end of the reverse wire in the reverse wire bond through an upper surface of the mold layer.

Methods for manufacturing a semiconductor package and a semiconductor module

A method for manufacturing a semiconductor package includes: providing a leadframe having component positions each of which includes a die pad; providing semiconductor dies each having a first power electrode on a first main surface and a second power electrode on a second main surface; mounting a respective semiconductor die onto the die pad of a respective component position of the leadframe such that the first power electrode is attached to the die pad; mounting a clip onto the dies such that the clip is attached to a respective second power electrode; embedding at least the side faces of the dies and inner surfaces of the leadframe and clip in a mold compound to form a subassembly; and cutting through the clip and leadframe at positions between neighbouring component positions.

METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE

A method of manufacturing a semiconductor package may include disposing, in a lower mold, a substrate strip in which a plurality of semiconductor chips are arranged in a horizontal direction, providing, in an upper mold, a release film to which a first encapsulant is attached, allowing the upper mold and the lower mold to be proximate to each other such that a first encapsulant is adjacent to an upper surface of each of the plurality of semiconductor chips, injecting a second encapsulant into a space between the upper mold and the lower mold, heating the first encapsulant and the second encapsulant to form a molded structure including a first encapsulating layer and a second encapsulating layer, allowing the upper mold and the lower mold to be spaced from each other such that the molded structure is separated from the release film, and cutting the molded structure.

SEMICONDUCTOR PACKAGE
20260011691 · 2026-01-08 ·

A semiconductor package includes a redistribution structure, a first semiconductor chip above the redistribution structure, a second semiconductor chip on, and offset relative to, the first semiconductor chip, a plurality of first conductive posts extending from a bottom surface of the second semiconductor chip to a top surface of the redistribution structure, a third semiconductor chip on the second semiconductor chip, a plurality of second conductive posts extending from a bottom surface of the third semiconductor chip to the top surface of the redistribution structure, and a molding layer between the top surface of the redistribution structure and the bottom surface of the third semiconductor chip.

INTERCONNECT SUBSTRATE AND METHOD OF MAKING
20260011574 · 2026-01-08 ·

A method of making an interconnect substrate, comprising disposing an embedded component and at least one tracking identifier in a substrate core, and planarizing the substrate core to form a planar surface, forming a conductive layer over a frontside planar surface, disposing a layer of dielectric over the frontside planar surface, the embedded component, and the conductive layer, rotating the substrate core such that a back surface of the substrate core is configured for processing, and forming a conductive layer over the back surface of the substrate core.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

A semiconductor device includes a semiconductor element, a sealing member, and a rewiring layer. The rewiring layer includes an insulating layer covering a front surface of the semiconductor element and a part of the sealing member, an electrode connected to the semiconductor element, and an externally-exposed layer being conductive and covering a portion of the electrode exposed from the insulating layer.

ELECTRONIC PACKAGE AND MANUFACTURING METHOD THEREOF

An electronic package is provided, in which an electronic module and at least one support member are disposed on a substrate structure having a circuit layer, such that the stress on the substrate structure is dispersed through the at least one support member to eliminate the problem of stress concentration and prevent the substrate structure from warping.

Semiconductor device package and method of manufacturing the same

A semiconductor device package and a method of manufacturing a semiconductor device package are provided. The semiconductor device package includes a carrier, a first component, a second component, and a protective element. The first component and the second component are arranged side by side in a first direction over the carrier. The protective element is disposed over a top surface of the carrier and extending from space under the first component toward a space under the second component. The protective element includes a first portion and a second portion protruded oppositely from edges of the first component by different distances, and the first portion and the second portion are arranged in a second direction angled with the first direction.