A semiconductor device includes a first die, a second die, a first redistribution layer (RDL) structure and a connector. The RDL structure is disposed between the first die and the second die and is electrically connected to the first die and the second die and includes a first polymer layer, a second polymer layer, a first conductive pattern and an adhesion promoter layer. The adhesion promoter layer is between and in direct contact with the second polymer layer and the first conductive pattern. The connector is disposed in the first polymer layer and in direct contact with the second die and the first conductive pattern.

Devices and methods for forming a chip package structure including a package substrate, a first adhesive layer attached to a top surface of the package substrate, and a beveled stiffener structure attached to the package substrate. The beveled stiffener structure may include a bottom portion including a tapered top surface, in which a bottom surface of the bottom portion is in contact with the first adhesive layer, a second adhesive layer attached to the tapered top surface, and a top portion including a tapered bottom surface, in which the tapered bottom surface is in contact with the second adhesive layer. The tapered top surface and the tapered bottom surface have a taper angle between 5 degrees and 60 degrees with respect to a top surface of the package substrate.

An IC die includes a temperature control element suitable for three-dimensional IC package with enhanced thermal control and management. The temperature control element may be formed as an integral part of an IC die that may assist temperature control of the IC die when in operation. The temperature control element may include a heat dissipation material disposed therein to assist dissipating thermal energy generated by the plurality of devices in the IC die during operation.

An inductor structure, a package substrate, an integrated circuit device, an integrated circuit device assembly and a method of fabricating the inductor structure. The inductor structure includes: an electrically conductive body; and a magnetic structure including a non-electrically-conductive magnetic material, wherein: one of the magnetic structure or the electrically conductive body wraps around another one of the magnetic structure or the electrically conductive body to form the inductor structure therewith; and at least one of the electrically conductive body or the magnetic structure has a granular microstructure including randomly distributed particles presenting substantially non-linear particle-to-particle boundaries with one another.

In one example, an electronic device comprises a substrate comprising a conductive structure and a dielectric structure, the dielectric structure comprising an upper dielectric layer, an electronic component over a top side of the substrate and coupled with the conductive structure, an encapsulant over the top side of the substrate and adjacent a lateral side of the electronic component, and a shield over the top side of the electronic component and contacting a lateral side of the encapsulant and a first lateral side of the substrate. The conductive structure comprises a first tab structure at the first lateral side of the substrate, and wherein the first tab structure contacts the shield and extends above the upper dielectric layer. Other examples and related methods are also disclosed herein.

An electronic device includes a multilevel package substrate with a horizontal substrate integrated waveguide (SIW) with a channel, a vertical SIW with an opening, a grounded coplanar waveguide (GCPW), a first transition between the horizontal SIW and the GCPW, and a second transition between the horizontal and vertical SIWs, as well as a semiconductor die having conductive structures coupled to a signal trace and a ground trace of the GCPW, and a package structure that encloses the semiconductor die and a portion of the multilevel package substrate.

An interconnected semicondcutor subassembly structure and formation thereof. The interconnected semicondcutor subassembly structure includes an interconnect structure, and first and second semicondcutor dies bonded to respective portions of a top surface of the interconnect structure. The interconnected semicondcutor subassembly structure further includes an underfill layer formed within a first gap located between a bottom surface of the first semiconductor die and the first portion the top surface of the interconnect structure, formed within a second gap located between the bottom surface of the second semiconductor die and the second portion of the top surface of the interconnect structure, and formed within a first portion of a third gap located between the first semicondcutor die and the second semicondcutor die. A top surface of the underfill layer formed within the first portion of the third gap located between the first and second semicondcutor dies has a concave meniscus shape.

A method of manufacturing a semiconductor package of stacked semiconductor chips includes forming a reverse wire bond by bonding one end of a reverse wire to a chip pad of the second-highest semiconductor chip of the stacked semiconductor chips and connecting the other end of the reverse wire to a conductive bump on a chip pad of the uppermost semiconductor chip of the stacked semiconductor chips. The method also includes molding the stacked semiconductor chips with the reverse wire bond using a mold layer. The method further includes processing the mold layer to expose the conductive bump and the other end of the reverse wire in the reverse wire bond through an upper surface of the mold layer.

A semiconductor storage device according to an embodiment includes a board, a first semiconductor memory, a second semiconductor memory, a controller, and a wiring. The first semiconductor memory includes a first bonding member. The first semiconductor memory has a first corner, a second corner, a third corner, and a fourth corner. The second semiconductor memory includes a second bonding member. The second semiconductor memory has a fifth corner, a sixth corner, a seventh corner, and an eighth corner. The first bonding member is a first detection-bonding member. The first detection-bonding member detects a connection state of the first semiconductor memory and the second semiconductor memory. The second bonding member is a second detection-bonding member. The second detection-bonding member is electrically connected to the first detection-bonding member. The second detection-bonding member detects a connection state of the first semiconductor memory and the second semiconductor memory.

Disclosed is a semiconductor package device comprising a lower redistribution substrate, a first semiconductor chip on the lower redistribution substrate, vertical structures on the lower redistribution substrate, and a first molding member on the lower redistribution substrate and on the first semiconductor chip and the vertical structures. The vertical structure includes a first post having a first diameter, a second post on the first post and having a second diameter, and a bonding pad on the second post opposite the first post and having a third diameter. The first, second, and third diameters are different from each other. The third diameter is greater than the second diameter.