A method for forming a pixel package is provided. The method for forming the pixel package includes the following steps: providing a first substrate; transferring a first LED chip and a second LED chip to the first substrate; forming a composite laminate between the first LED chip and the second LED chip; adhering a second substrate to a top surface of the composite laminate; removing the first substrate from back sides of the first LED chip, the second LED chip, and the composite laminate; forming a redistribution layer on the back sides of the first LED chip, the second LED chip, and the composite laminate; and removing the second substrate from the top surface of the composite laminate.

Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.

An offset interposer includes a land side including land-side ball-grid array (BGA) and a package-on-package (POP) side including a POP-side BGA. The land-side BGA includes two adjacent, spaced-apart land-side pads, and the POP-side BGA includes two adjacent, spaced-apart POP-side pads that are coupled to the respective two land-side BGA pads through the offset interposer. The land-side BGA is configured to interface with a first-level interconnect. The POP-side BGA is configured to interface with a POP substrate. Each of the two land-side pads has a different footprint than the respective two POP-side pads.

A microelectronic device is formed to include an embedded die substrate on an interposer; where the embedded die substrate is formed with no more than a single layer of transverse routing traces. In the device, all additional routing may be allocated to the interposer to which the embedded die substrate is attached. The embedded die substrate may be formed with a planarized dielectric formed over an initial metallization layer supporting the embedded die.

A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.

A camera module includes a ceramic printed circuit board, an image sensor disposed under the ceramic printed circuit board, and a printed circuit board disposed under the ceramic printed circuit board so as to be spaced apart from the image sensor. The ceramic printed circuit board includes a cavity formed in a lower surface thereof and having a bottom surface and a side surface. The image sensor is disposed in the cavity of the ceramic printed circuit board and flip-chip bonded to the bottom surface of the cavity of the ceramic printed circuit board.

A semiconductor and a method of fabricating the semiconductor having multiple, interconnected die including: providing a semiconductor substrate having a plurality of disparate die formed within the semiconductor substrate, and a plurality of scribe lines formed between pairs of adjacent die of the plurality of disparate die; and fabricating, by a lithography system, a plurality of inter-die connections that extend between adjacent pair of die of the plurality of die.

A method for fabricating a semiconductor wafer may etch a surface of a silicon substrate to form a first cavity and a second cavity. The method may apply a first dielectric layer to the surface of the silicon substrate, the first cavity, and the second cavity. The method may affix a first die into the first cavity of the silicon substrate. The method may affix a second die into the second cavity of the silicon substrate. The method may apply a second dielectric layer to the surface of the silicon substrate, an exposed surface of the first die, and an exposed surface of the second die. The method may form a redistribution layer over the second dielectric layer, where the redistribution layer is configured to electrically couple the first die to the second die.

Disclosed are a fan-out packaging device and a method of manufacturing the fan-out packaging device, and more particularly a fan-out packaging device using a bridge, the fan-out packaging device including a bridge formed at one side of a fan-out package having two or more dies integrated therein, at least one trace formed at the bridge, and a connection terminal formed at an end of the trace, the connection terminal being in contact with a contact terminal of the fan-out package, wherein the different dies integrated in the fan-out package are electrically connected to each other via the bridge.

A package substrate based on a molding process may include an encapsulation layer, a support frame located in the encapsulation layer, a base, a device located on an upper surface of the base, a copper boss located on a lower surface of the base, a conductive copper pillar layer penetrating the encapsulation layer in the height direction, and a first circuit layer and a second circuit layer over and under the encapsulation layer. The second circuit layer includes a second conductive circuit and a heat dissipation circuit, the first circuit layer and the second conductive circuit are connected conductively through the conductive copper pillar layer, the heat dissipation circuit is connected to one side of the device through the copper boss and the base, and the first circuit layer is connected to the other side of the device.