A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.

A display panel manufacturing apparatus and a display panel manufacturing method are provided. A display panel manufacturing apparatus manufactures a display panel which is on a lower stage and includes light emitting elements. The display panel manufacturing apparatus includes: a power supply for supplying an alignment voltage for aligning the light emitting elements on the display panel; and an upper stage including a probe unit to provide the alignment voltage to the display panel and magnetic sensors to sense an alignment state of the light emitting elements.

A package structure is provided. The package structure includes a first electronic component and a second electronic component, and a data access structure. The data access structure is disposed partially in a gap between the first electronic component and the second electronic component. The data access structure includes a logic portion and a storage portion. One of the logic portion and the storage portion is in the gap, and the other one of the logic portion and the storage portion is outside of the gap.

An electronic device includes a substrate, an outer layer, a conductive line layer, and a switchable circuit chip. The substrate has a plurality of having a plurality of first vias. The outer layer is disposed on a side of the substrate and has a plurality of second vias. The first vias have a larger distribution density or quantity than the second vias, so that a part of the first vias are electrically connected to the second vias, and another part of the first vias are electrically floating. The conductive line layer is disposed on the outer layer and has a plurality of conductive traces. The conductive traces are electrically connected to the second vias. The switchable circuit chip is electrically connected to the first vias. The conductive traces are electrically connected to the switchable circuit chip. The switchable circuit chip is configured for controlling an electrical connecting relationship between the conductive traces and the first vias and an electrical connecting relationship among the conductive traces.

A display device includes first and second electrodes disposed on a substrate, the first and second electrodes extending in a direction and being parallel to each other, a first insulating layer disposed on the first and second electrodes, light-emitting elements disposed on the first insulating layer, the light-emitting elements having first end portions disposed on the first electrode and second end portions disposed on the second electrode, and a partition disposed on the first insulating layer and being parallel to the first electrode, the partition including a first part that overlaps the light-emitting elements, and second parts that do not overlap the light-emitting elements, wherein a vertical distance from a top surface of the first electrode to a top surface of the first part is equal to a vertical distance from the top surface of the first electrode to top surfaces of the second parts.

A method of manufacturing a three-dimensional system-on-chip, comprising providing a memory wafer structure with a first redistribution layer; disposing a first conductive structure and a core die structure and an input/output die structure with a second conductive structure on the first redistribution layer, the input/output die structure being disposed around the core die structure; forming a dielectric layer covering the core die structure, the input/output die structure, and the first conductive structure; removing a part of the dielectric layer and thinning the core die structure and a plurality of input/output die structures to expose the first and second conductive structures; forming a third redistribution layer on the dielectric layer, the third redistribution layer being electrically connected to the first and second conductive structures; forming a plurality of solder balls on the third redistribution layer; performing die saw. A three-dimensional system-on-chip is further provided.

A display device includes a substrate including a plurality of pixels, a circuit conductive layer on the substrate, a barrier metal layer on the circuit conductive layer, a first electrode and a second electrode on the barrier metal layer and spaced apart from each other, and a light emitting element between the first electrode and the second electrode, and the barrier metal layer is electrically separated from the circuit conductive layer.

A display module is disclosed. The display module includes a substrate; a plurality of inorganic light-emitting diodes provided in a plurality of mounting grooves formed in the substrate, the plurality of inorganic light-emitting diodes including an inorganic light-emitting diode that has a first chip electrode and a second chip electrode; a first substrate electrode pad and a second substrate electrode pad provided at a bottom surface of a mounting groove from among the plurality of mounting grooves, the first substrate electrode pad being electrically coupled to the first chip electrode and the second substrate electrode pad being electrically coupled to the second chip electrode; and a third substrate electrode pad and a fourth substrate electrode pad provided around the mounting groove.

Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-bonding techniques join layers of dies of various physical sizes, form factors, and foundry nodes to a semiconductor wafer, to interposers, or to boards and panels, allowing mixing and matching of variegated dies in the fabrication of 3D stacked devices during wafer level packaging (WLP). Molding material fills in lateral spaces between dies to enable fan-out versions of 3D die stacks with fine pitch leads and capability of vertical through-vias throughout. Molding material is planarized to create direct-bonding surfaces between multiple layers of the variegated dies for high interconnect density and reduction of vertical height. Interposers with variegated dies on one or both sides can be created and bonded to wafers. Logic dies and image sensors from different fabrication nodes and different wafer sizes can be stacked during WLP, or logic dies and high bandwidth memory (HBM) of different geometries can be stacked during WLP.

An electronic package is provided, in which a circuit structure is stacked on a carrier structure having a routing layer via support structures, where electronic elements are disposed on upper and lower sides of the circuit structure and the carrier structure, and the electronic elements and the support structures are encapsulated by a cladding layer, such that the electronic package can effectively increase the packaging density to meet the requirements of multi-functional end products.