A semiconductor device includes: a first substrate including first front side pads arranged around a front surface; a second substrate including second front side pads arranged around a front surface; a third substrate; first connection members each electrically connecting a corresponding first front side pad on the first substrate and a corresponding third back side pad on the third substrate; second connection members each electrically connecting a corresponding second front side pad on the second substrate and a corresponding third front side pad on the third substrate; a first resin layer that is in contact with a periphery of the front surface of the first substrate and a periphery of the back surface of the third substrate; and a second resin layer that is in contact with a periphery of the front surface of the second substrate and a periphery of the back surface of the third substrate.

A semiconductor package includes a first package having a first semiconductor chip, a second semiconductor chip and a core member including a through-hole. At least one of the first and second semiconductor chips is disposed in the through-hole. An encapsulant is disposed in the through-hole. A first redistribution layer is disposed above the core member and is electrically connected to the first and second semiconductor chips. A second redistribution layer is disposed under the core member and electrically connects the first and second semiconductor chips with an external PCB. Core vias penetrate the core member and electrically connect the first and second redistribution layers. A second package is disposed on the first package and includes a third semiconductor chip. A plurality of first electrical connection structures electrically connects the first and second packages. A plurality of second electrical connection structures electrically connects the semiconductor package with the external PCB.

An under bump metallurgy (UBM) and redistribution layer (RDL) routing structure includes an RDL formed over a die. The RDL comprises a first conductive portion and a second conductive portion. The first conductive portion and the second conductive portion are at a same level in the RDL. The first conductive portion of the RDL is separated from the second conductive portion of the RDL by insulating material of the RDL. A UBM layer is formed over the RDL. The UBM layer includes a conductive UBM trace and a conductive UBM pad. The UBM trace electrically couples the first conductive portion of the RDL to the second conductive portion of the RDL. The UBM pad is electrically coupled to the second conductive portion of the RDL. A conductive connector is formed over and electrically coupled to the UBM pad.

A semiconductor device includes lower circuit patterns on a lower substrate; lower bonding patterns on the lower circuit patterns, the lower bonding patterns including a conductive material and being electrically connected to the lower circuit patterns; upper bonding patterns on and contacting the lower bonding patterns, and including a conductive material; a passive device on the upper bonding patterns, and including a conductive material and contacting one of the upper bonding patterns; a gate electrode structure on the passive device, and including gate electrodes spaced apart from each other in a first direction, each of which extends in a second direction, and extension lengths in the second direction of the gate electrodes increasing from a lowermost level toward an uppermost level in a stepwise manner; a channel extending through at least a portion of the gate electrode structure; and an upper substrate on the channel.

A method for normalizing the solder interconnects (e.g., normalizing the height of the solder ball interconnects) in a circuit package module (e.g., dual-sided mold grid array package module) after removal from a test board includes receiving in a fixture the circuit package module upside down and removably coupling a stencil to the fixture and over the circuit package module. The stencil has a pattern of apertures that coincides with the pattern of solder interconnects of the circuit package module. The method also includes applying solder paste over the stencil to pass through the apertures to add solder paste to the solder interconnects. The method also includes removing the stencil-from over the fixture, and removing the circuit package module from the fixture. The circuit package module can be heated to reflow the solder interconnects with the added solder paste.

A semiconductor device assembly includes a plurality of stacks of semiconductor devices horizontally spaced apart by a gap fill material, each including multiple devices coupled by TSVs to external package contacts through an RDL, and a device connection layer formed over the stacks and including a first plurality of contacts coupled to the TSVs, a second plurality of contacts facing away from the TSVs, a first plurality of conductors coupling contacts of the first plurality to corresponding contacts of the second plurality, and a second plurality of conductors coupling contacts of the second plurality to other contacts of the second plurality. The assembly further includes a multi-reticle semiconductor device over the device connection layer and including a plurality of circuit regions horizontally spaced apart from one another by a reticle-edge region absent any electrical conductors. The second plurality of conductors in the device connection layer operably interconnect the circuit regions.

A semiconductor package contains a first semiconductor die, electrically coupled to a plurality of leads around a perimeter of the semiconductor package via a molded interconnect. The molded interconnect comprises a plurality of embedded interconnects in a first mold compound which electrically couple the plurality of bond pads of the first semiconductor die to the plurality of leads of the semiconductor package. The molded interconnect may have a greater cross-sectional area at a given pitch compared to a similar wire bonded semiconductor package and allow advantageous thermal management of the semiconductor package compared to other electrical coupling techniques. The molded interconnect may allow small high-power integrated circuits to be packaged with a package footprint which is smaller than would otherwise be available.

An electrically non-conducting film (109) comprising an oligomer comprising an arylene or heteroarylene repeating unit is disposed between a chip (105), e.g. a flip-chip, and a functional layer (101), e.g. a printed circuit board, electrically connected to the chip by electrically conducting interconnects (107). The oligomer may be crosslinked.

Stacked die modules for semiconductor device assemblies and methods of manufacturing the modules are disclosed. In some embodiments, the module includes a shingled stack of semiconductor dies, each die having an uncovered porch with bond pads. Further, a dielectric structure partially encapsulates the shingled stack of semiconductor dies. The dielectric structure includes openings corresponding to the bond pads. The module also includes conductive structures disposed on the dielectric structure, where each of the conductive structures extends over at least one porch of the semiconductor dies to connect to at least one bond pad through a corresponding opening. The semiconductor device assembly may include a controller die attached to a package substrate, the controller die carrying one or more stacked die modules, and bonding wires connecting terminals of the modules to package bond pads.

A bonded structure is disclosed. The bonded structure can comprise a first semiconductor element having a first contact pad. An interposer can include a second contact pad on a first side of the interposer and a third contact pad and a fourth contact pad on a second side of the interposer opposite the first side, the second contact pad bonded to the first contact pad; a second semiconductor element having a fifth contact pad bonded to the third contact pad and a sixth contact pad bonded to the fourth contact pad. A switching circuitry can be configured to switch between a first electrical connection between the second and third contact pads and a second electrical connection between the second and fourth contact pads.