H10P72/7402

Workpiece cutting method and resin applying device

A workpiece cutting method includes: a first step of pasting an expandable sheet on a workpiece; a second step of irradiating, after the first step, the workpiece with laser light to form a modified region and expanding the expandable sheet to divide the workpiece into a plurality of chips, and meanwhile, to form a gap disposed between the plurality of chips and extending to a side surface of the workpiece; a third step of irradiating the expandable sheet with an ultraviolet light after the first step; a fourth step of filling, after the second step and the third step, the gap with resin from an outer edge part of the workpiece including the side surface; a fifth step of curing the resin after the fourth step; and a sixth step of taking out the chips from above the expandable sheet after the fifth step.

Wafer processing method
12519019 · 2026-01-06 · ·

A wafer processing method includes forming a start point of division along division lines, providing, on a front surface of the wafer, a protective member for protecting the front surface of the wafer, grinding a back surface of the wafer to a desired thickness, forming division grooves in the division lines to divide the wafer into individual device chips, providing an expandable sheet to the back surface of the wafer and removing the protective member from the front surface of the wafer, coating the front surface of the wafer with an adhesive liquid having flowability, expanding and shrinking the sheet so as to allow the adhesive liquid to enter each of the division grooves and to discharge the adhesive liquid from the division grooves, and removing the adhesive liquid from the front surface of the wafer to clean a side surface of each of the division grooves.

Laminate peeling method, laminate, and laminate production method

A laminate debonding method includes producing a laminate by joining a first substrate formed of a semiconductor-forming substrate to a second substrate formed of a support substrate which allows passage of infrared laser light, by the mediation of a first adhesive layer provided on the first substrate and a second adhesive layer provided on the second substrate, wherein the first adhesive layer is obtained by curing an adhesive (A) containing a component which is cured through hydrosilylation, and the second adhesive layer is obtained by use of an adhesive (B) formed of a polymer adhesive having an aromatic ring in at least one of a main chain and a side chain and which allows passage of infrared laser light; and irradiating the laminate with infrared laser light from a second substrate side for debonding the second substrate at the interface between the first and second adhesive layers.

Chip transferring method and the apparatus thereof

A chip transferring method includes steps of: providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion of the plurality of chips and a second portion of the plurality of chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion of the plurality of chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion of the plurality of chips from the first load-bearing structure; dividing the first portion of the plurality of chips into a plurality of blocks, wherein each of the plurality of blocks comprising multiple chips of the first portion of the plurality of chips; and transferring the first portion of the plurality of chips in one of the plurality of blocks to a second load-bearing structure in single-batch.

CHIP MANUFACTURING METHOD
20260011562 · 2026-01-08 ·

A chip manufacturing method includes: preparing a wafer unit having a protective member fixed to one surface of a wafer and having a recess and a loop-shaped protrusion surrounding the recess on the other surface side of the wafer, the protective member including a first sheet in contact with the wafer, a resin layer stacked on the first sheet, and a second sheet stacked on the resin layer; processing the wafer and the protective member along a boundary between the recess and the loop-shaped protrusion to separate the recess and the loop-shaped protrusion from each other; and after separating of the recess and the loop-shaped protrusion, holding the protective member side of the wafer on a holding table and dividing the wafer from the other surface side to manufacture a plurality of chips.

RELEASE AGENT COMPOSITION FOR PHOTOIRRADIATION RELEASE, LAMINATE, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE
20260011598 · 2026-01-08 · ·

There is provided a release agent composition for photoirradiation release, containing: a Novolac resin, a (meth)acrylic acid ester-based polymer, and a solvent.

Semiconductor device and method of manufacturing the same

A semiconductor device includes: a first semiconductor chip mounted on a chip mounting portion via a first bonding material; and a second semiconductor chip mounted on the first semiconductor chip via a second bonding material. The first semiconductor chip includes: a protective film; and a first pad electrode exposed from the protective film in a first opening portion of the protective film. The second semiconductor chip is mounted on the first pad electrode of the first semiconductor chip via the second bonding material. The second bonding material includes: a first member being in contact with the first pad electrode; and a second member interposed between the first member and the second semiconductor chip. The first member is a conductive bonding material of a film shape, and the second member is an insulating bonding material of a film shape.

Coated semiconductor dies

In examples, a chip scale package (CSP) comprises a semiconductor die; a conductive terminal coupled to the semiconductor die; and a non-conductive coat covering a backside of the semiconductor die and a sidewall of the semiconductor die. The non-conductive coat has a thickness of less than 45 microns.

Method of manufacturing semiconductor device using gas blowing agent

A method of manufacturing a semiconductor device may include bonding a carrier substrate onto a device wafer using an adhesive member, wherein the adhesive member includes a base film, a device adhesive film disposed on a lower surface of the base film and contacting the device wafer, and a carrier adhesive film disposed on an upper surface of the base film and contacting the carrier substrate. The device adhesive film includes a gas blowing agent, and the carrier adhesive film may not include a gas blowing agent.

ADHESIVE TAPE SHEET, METHOD OF MANUFACTURING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
20260018451 · 2026-01-15 ·

An adhesive tape sheet includes an adhesive film including a first region attached to a semiconductor structure and vertically overlapping an edge of the semiconductor structure, and a second region adjacent to the first region. The adhesive film includes a non-patterned portion and a plurality of pattern portions defined by incision portions. A portion of the plurality of pattern portions include an open portion connected to the non-patterned portion in a first direction, and an extension portion having at least a portion extending from the open portion in a second direction opposite to the first direction and defined by the incision portions. A first group of the plurality of pattern portions are disposed on the first region and a second group of the plurality of pattern portions are disposed on the second region. A first density of the first group and a second density of the second group are different.