A die transfer system includes a carrier wafer with an adhesive layer on an upper surface of the carrier wafer that comprises a patterned bottom layer and a guard ring over a perimeter of the carrier wafer.

Provided is a method of manufacturing a semiconductor package, the method including: forming a bonding layer on a carrier, forming a redistribution substrate on the bonding layer, mounting a plurality of semiconductor chips on the redistribution substrate, forming a package structure for a plurality of semiconductor packages; bonding an ultraviolet (UV)-curable adhesive sheet to a surface of the package structure opposite the bonding layer and redistribution substrate; separating or removing the carrier and the bonding layer from the package structure; forming an under bump metallurgy (UBM) layer and forming an external connection conductor on the redistribution substrate; cutting the package structure into the plurality of semiconductor packages; irradiating the UV-curable adhesive sheet with UV rays, after cutting the plurality of semiconductor packages; and separating the plurality of semiconductor packages from the UV-curable adhesive sheet.

A semiconductor device is formed using a jig. The jig includes a metal frame, a polymer film, and an adhesive layer disposed between the metal frame and polymer film. An opening is formed through the adhesive layer and polymer film. A groove is formed around the opening. A semiconductor package is disposed on the jig over the opening with a side surface of the semiconductor package adjacent to the groove. A shielding layer is formed over the semiconductor package and jig. The semiconductor package is removed from the jig.

A bonding and indexing method is provided, having a first index head to move a substrate in an indexing direction from a first position to a second position; a second index head to move the substrate in an indexing direction from the second position to a third position; and the first and/or second index head has a bonding element to effect a bonding process between the substrate and an element disposed against the substrate so that bonding and movement in the indexing direction is implemented simultaneously by the first index head and/or bonding and movement in the indexing direction is implemented simultaneously by the second index head.

A dicing method including the steps of: bonding a first wafer having a first wafer resistivity and a second wafer having a second wafer resistivity higher than the wafer first resistivity, thereby forming a bonded wafer; irradiating the bonded wafer with a laser while varying focal lengths in a thickness direction of the bonded wafer, thereby forming a plurality of modified regions along a dicing line; and dicing the bonded wafer along the dicing line by performing an expansion process on the bonded wafer formed with the modified regions.

Described herein are manufacturing techniques and packages that enable wafer-scale heterogenous integration of electronic integrated circuits (EIC) with photonic integrated circuits (PIC) using a reconstitution-based fabrication approach. Wafer-scale photonic devices are formed by assembling strips of known-good dies (KGD). Such strips include arrays of adjacent reticles that have been singulated from a wafer. A strip can include a single row (or column) of reticles singulated from a wafer or multiple rows (or columns) that are adjacent to one another, enabling two-dimensional assembly and increased coverage. Wafer reconstitution involves transferring and bonding one or more strips of KGDs to a target substrate. A KGD is a reticle that is not part of an exclusion zone and has been verified to work properly. Thus, a reconstituted wafer includes strips that have verified to be fully functional.

A manufacturing method for a semiconductor device includes a preparation step of preparing a wafer that has a first surface on one side and a second surface on the other side, a first supporting step of supporting the wafer from the first surface side by a first member of a plate shape, a thinning step of thinning the wafer in a state where the wafer is supported by the first member, a second supporting step of supporting the wafer from a peripheral edge portion side of the second surface by a second member of a plate shape that exposes an inner portion of the second surface after the thinning step, and a removing step of removing the first member from the first surface side in a state where the wafer is supported by the second member.

A buffer apparatus, a preprocessing apparatus, a mounting apparatus, a preprocessing method and a mounting method that can reduce bonding failure due to time elapsed from preprocessing of an electronic component and a mounting board to a bonding process. The buffer apparatus of the present embodiment includes a storage 161 that stores a component supply body TW that is a workpiece which is a wafer W diced into an electronic component E attached on a tape T attached to a ring R, and a mounting board BW that is a workpiece on which the electronic component E released from the component supply body TW is mounted after surface processing and/or a cleaning process; a chamber 162 that houses the storage 161; and a storage adjustment unit 163 that adjusts temperature, humidity, and pressure of gas inside the storage 161 independently from the chamber 162.

A method of manufacturing a laminated wafer with a processed outer circumference includes acquiring a value of joint misalignment between a first wafer and a second wafer of the laminated wafer by measuring the positions of outer circumferences of the first and second wafers, holding the second wafer of the laminated wafer on a holding surface of a holding mechanism, acquiring the position of the first wafer with respect to the holding mechanism while the laminated wafer is being held by the holding mechanism, acquiring the position of the second wafer with respect to the holding mechanism on the basis of the acquired value of joint misalignment and the acquired position of the first wafer, and processing the outer circumference of the first wafer on the basis of the acquired position of the second wafer as a reference.

A method of transferring a die from a carrier to a receive substrate is provided. The method includes the steps of: (a) supporting a die on a carrier, a transfer material being provided between the die and the carrier; (b) exposing the transfer material to light energy to form a bubble in the transfer material; and (c) transferring the die from the carrier to a receive substrate using the bubble, the die being in contact with the bubble when the die contacts the receive substrate.