A method for producing a semiconductor treatment liquid used for treating a resin having an ether bond, the method comprising: heating a phosphoric acid-containing solution to 100 C. or higher and 400 C. or lower to produce a heated solution; cooling the heated solution to 5 C. or higher and 95 C. or lower to produce a cooled solution; and mixing the cooled solution with at least one selected from the group consisting of an aqueous hydrogen peroxide solution and an aqueous nitric acid solution.

Semiconductor devices having a modified dicing street for hybrid bonding are provided. In one aspect, a semiconductor device includes: at least one die having a metal disposed on a semiconductor wafer, where a portion of the metal present along at least one edge of the at least one die includes an implant selected from: bismuth, hydrogen, and combinations thereof. The at least one die may be used for hybrid bonding via a combination of metal and dielectric bonds. A method of fabricating the present semiconductor devices is also provided.

A chip based on a low-modulus supramolecular coating material includes a chip body and a low-modulus supramolecular coating provided on one side of the chip away from a growth substrate, wherein the chip body is of a cylindrical or columnar structure, the low-modulus supramolecular coating is completely or partially coated on a surface of the chip, and an area of the low-modulus supramolecular coating is less than or equal to an area of the chip body. The transfer substrate includes a substrate and a low-modulus supramolecular coating, wherein the low-modulus supramolecular coating is patterned and modified on a surface of the substrate to form a plurality of transfer sites, and a position and a size of each transfer site correspond to distribution and sizes of the transferred chips. The present application addresses problems such as complicated structures, relatively low transfer efficiency, poor precision and vulnerability of the transferred chips.

In some examples, a method for manufacturing a semiconductor package comprises coupling first and second semiconductor dies to a metal frame; covering the first and second semiconductor dies and the metal frame with a mold compound; coupling first and second passive components to the first and second semiconductor dies, the first and second passive components on an external surface of the mold compound; sawing through a portion of the metal frame from a first direction to form a first vertical surface of the metal frame, the first vertical surface having a first roughness due to the sawing; and laser cutting through the mold compound and a remainder of the metal frame from a second direction opposing the first direction to form a second vertical surface on the metal frame and a third vertical surface on the mold compound, the second vertical surface having a second roughness due to the laser cutting and the third vertical surface having a third roughness due to the laser cutting.

A die bonding apparatus includes a push-up unit, a head having a collet that sucks a die, and a control device. The control device is configured to suck a dicing tape using a dome plate; land the collet onto the die using the head; suck the die using the collet; lift plural blocks from the dome plate; stop the outermost block disposed on the outermost side among the plural blocks from lifting at a height where the die is peeled off from the dicing tape; and lift blocks other than the outermost block among the plural blocks higher than the outermost block to a predefined height.

Systems and methods plasma dicing are provided. The method includes forming a mask layer on a first surface of a wafer. The mask layer includes scribe lines and the wafer is diced along the scribe lines. The method also includes forming a die attach layer of a photo patternable material on a second surface of the wafer opposite the first surface. The method further includes patterning the die attach layer to form a number of openings in the die attach layer in a predetermined pattern. The method yet further includes applying a dicing tape to the die attach layer. The method includes dicing the wafer along the scribe lines to form dies of a plurality of dies supported by the dicing tape, a die of the plurality of dies having the die attach layer of the photo patternable material.

A manufacturing method of a second substrate by separating, as the second substrate, a part of a small thickness portion of a first substrate including a protruding portion and the small thickness portion surrounded by the protruding portion, the first substrate having one surface to which a protective member is fixed, includes setting an inner circumferential edge of a removal region in the small thickness portion, where the inner edge defines an external shape of the second substrate, setting an outer circumferential edge of the removal region such that the outer edge of the removal region is located at a middle point between the inner edge and a boundary between the small thickness portion and the protruding portion or located outward of the middle point in a radial direction of the first substrate, and separating the second substrate from the first substrate by removing the removal region.

A device wafer processing method includes a protective film coating step of coating a face side of a device wafer with a protective film, a laser processing step of applying a laser beam having a wavelength absorbable by the device wafer to the device wafer along streets and forming laser processing grooves that divide a device layer, a tape affixing step of affixing a tape to the protective film on the device wafer, a holding step of holding the face side of the device wafer by a holding table via the tape and exposing a reverse side of the device wafer, and a cutting step of cutting the device wafer held on the holding table, by a cutting blade from the reverse side along the streets, and dividing the device wafer into individual devices.

A method for manufacturing a semiconductor device includes preparing a temporary fixing structure body in which semiconductor elements each including a first surface on which a connection terminal is formed and a second surface are attached to a temporary fixing material, forming a curable bonding adhesive layer on the second surface of each of the semiconductor elements, attaching a carrier to one surface of the curable bonding adhesive layer opposite to the semiconductor elements, fixing the semiconductor elements to the carrier by curing the curable bonding adhesive layer, and removing the temporary fixing material. The semiconductor elements are attached onto the temporary fixing material such that the first surface of each of the semiconductor elements is directed toward the temporary fixing material, and are encapsulated with an encapsulant material such that the second surface of each of the semiconductor elements is exposed from an encapsulant material layer.

A method to form a first diamond composite wafer, a second diamond composite wafer or a third diamond composite wafer with a predetermined diameter includes the following steps: preparing a plurality of diamond blocks, wherein each diamond block has a dimension smaller than the predetermined diameter; attaching the plurality of diamond blocks to a first semiconductor substrate with the predetermined diameter to form a first temporary composite wafer, wherein a thermal conductivity of the first semiconductor substrate is smaller than that of the diamond block; and filling gaps among the plurality of diamond blocks of the first temporary composite wafer to form the first diamond composite wafer; or attaching the first diamond composite wafer to a second semiconductor substrate with the predetermined diameter to form the second diamond composite wafer, or removing the first semiconductor substrate from the first diamond composite wafer to form the third diamond composite wafer.