The present invention relates to a handling system for fetching a substrate out of a substrate container, a use of such a handling system, a module comprising a substrate container and such a handling system and a method for fetching a substrate out of a substrate container. The handling system comprises a main assembly and a sub assembly. The sub assembly is moveably attached to the main assembly and moveable relative to the main assembly between a fetch position and a rest position. The sub assembly extends in the fetch position over the main assembly to fetch the substrate out of the substrate container and lies on the main assembly in the rest position to provide a contact between the main assembly and the substrate. The main assembly comprises a plurality of suction means to fasten and straighten the substrate.

A semiconductor wafer transport apparatus includes a frame, a transport arm movably mounted to the frame and having at least one end effector movably mounted to the arm so the at least one end effector traverses, with the arm as a unit, in a first direction relative to the frame, and traverses linearly, relative to the transport arm, in a second direction, and an edge detection sensor mounted to the transport arm so the edge detection sensor moves with the transport arm as a unit relative to the frame, the edge detection sensor being a common sensor effecting edge detection of each wafer simultaneously supported by the end effector, wherein the edge detection sensor is configured so the edge detection of each wafer is effected by and coincident with the traverse in the second direction of each end effector on the transport arm.

A system of processing a substrate includes an atmospheric-pressure transfer chamber, at least one vacuum processing chamber, at least two load-lock modules, a vacuum transfer chamber, a plurality of load ports, and a first transfer mechanism and a second transfer mechanism. The load ports are attached to the atmospheric-pressure transfer chamber and detachable containers are mounted on the load ports, respectively. A controller controls the first transfer mechanism and the second transfer mechanism to concurrently transfer a used consumable from the containers to the vacuum processing chamber through the atmospheric-pressure transfer chamber and one of the load-lock modules and to transfer a used consumable from the vacuum processing chamber through the vacuum transfer chamber and another one of the load-lock modules.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); said loading/unloading group comprises a load-lock chamber (300A) and a preparation station (300B) associated with each other.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); wherein said external robot (500) comprises an articulated arm (510) arranged to handle both treated substrates and untreated substrates as well as substrates support devices.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200).

A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second temperature lower than the first temperature onto the substrate, thereby replacing a residue of the first developer remaining after the development process with a second developer, transferring the substrate from the development device to a supercritical drying device, and supplying, by the supercritical drying device, at least one of a supercritical fluid and a subcritical fluid onto the substrate, thereby drying the second developer.

A cluster tool includes a plasma processing apparatus, a mobile replacement apparatus, and control circuitry. The plasma processing apparatus includes a vacuum transfer module, a position detection sensor, and a plasma processing module including a support member, a consumable ring, and a lifter pin. The mobile replacement apparatus includes a ring storage portion that stores the consumable ring, and a ring replacement robot that transfers the consumable ring. The control circuitry executes a ring replacement sequence including connecting the mobile replacement apparatus to the plasma processing module, placing the consumable ring in the ring storage portion on the lifter pin, detecting a position of the consumable ring on the lifter pin, adjusting the position of the consumable ring on the lifter pin, and placing the consumable ring on a ring support surface.

A system for detecting the presence of a wafer on a wafer handling robot. The system includes a robot having an end effector with a ledge portion having an opening; a vacuum pump; a conduit fluidly coupling the vacuum pump to the opening in the ledge portion; a pressure sensor located along the conduit to determine whether a measured pressure is within a target pressure range; and a wafer configured to be supported by the at least one end effector and spaced apart from the ledge portion by an air gap. When the wafer is supported by the at least one end effector in a proper position, the measured pressure is within the target pressure range. When the wafer is not supported by the wafer support structure or is supported by the wafer support structure in an improper position, the measured pressure is outside of the target pressure range.

A correction device for wafers and rotational drive mechanism of the wafers and a correction method thereof. The correction device includes a first robotic arm, an image capturing assembly and a wafer locating member installation/uninstallation mechanism disposed on the first robotic arm. The correction device further includes a second robotic arm and a wafer taking/placing mechanism disposed on the second robotic arm. The first robotic arm drives the image capturing assembly and the wafer locating member installation/uninstallation mechanism to move to a main correction mechanism to correct the image capturing range and the operation position thereof. The second robotic arm drives the wafer taking/placing mechanism to move to the main correction mechanism to correct the operation position thereof. The wafer taking/placing mechanism moves the wafer to a wafer correction mechanism to read the data of the wafer and adjust the wafer to a true angular position.