A manufacturing apparatus of a semiconductor device includes: a stage; a bonding head, including a mounting tool, a tool heater, and a lifting and lowering mechanism; and a controller performing bonding processing. The controller performs, in the bonding processing: first processing in which, after a chip is brought into contact with a substrate, as heating of the chip is started, the chip is pressurized against the substrate; distortion elimination processing in which, after the first processing and before melting of a bump, the lifting and lowering mechanism is driven in a lifting direction, thereby eliminating distortion of the bonding head; and second processing in which, after the distortion elimination processing, position control is performed on the lifting and lowering mechanism so as to cancel thermal expansion and contraction of the bonding head, thereby maintaining a gap amount at a specified target value.

An embodiment of an apparatus may include a chuck body, and a surface formed on the chuck body to hold a wafer, where the surface has a non-flat shape. Other embodiments are disclosed and claimed.

An embodiment of an apparatus may include a chuck body, and a surface formed on the chuck body to hold a wafer, where the surface has a non-flat shape. Other embodiments are disclosed and claimed.

The system includes a chuck defining a planar surface and peripheral surface surrounding the planar surface, a plurality of lift pins disposed within a plurality of apertures defined in the planar surface of the chuck, and a plurality of frame handles connected to the peripheral surface of the chuck. The plurality of lift pins are configured to extend out of the plurality of apertures above the planar surface to support a whole wafer, and the plurality of frame handles are configured to support a frame of a film frame carrier. The plurality of lift pins are further configured to retract into the plurality of apertures beneath the planar surface, with the planar surface of the chuck being configured to support a wafer of the film frame carrier.

A servo motor includes a motor and an encoder. The motor includes a housing, a stator and a rotating shaft. The housing includes a first vent hole. The stator is positioned in the housing. The rotating shaft is installed in the housing and rotated by the electromagnetic action of the stator. The rotating shaft is partially hollow, and at least one second vent hole is defined on the rotating shaft for gas to circulate between the first and second vent holes. The encoder is located in the housing to detect the rotation information of the motor and encode the rotation information into a signal. Additionally, a semiconductor device including a servo motor and a loading module is disclosed.

An atomic layer deposition apparatus comprising a first single substrate process chamber, a second single substrate process chamber, and a transfer mechanism configured to transfer the substrate between the first and the second process chamber. Wherein both the first and second single substrate process chambers are bounded by a bottom part and a top part for accommodating a substantially flat substrate between them.

This semiconductor device manufacturing device comprises: a stage; a bonding head; a copying mechanism provided on the bonding head; and a controller that executes the copying process to adjust a facing surface to be parallel to a reference plane by having the facing surface, which is a holding surface or a chip end face, follow the reference plane 110, which is a planar surface of the stage or a substrate. In the copying process, the controller moves the bonding head relative to the surface direction of the reference plane with the facing surface left abutting the reference plane in a state with the copying mechanism switched to a free state, until the axial direction position of the bonding head reaches a stipulated reference position, and when the axial direction position reaches the reference position, switches the copying mechanism to a locked state.

A method of forming a semiconductor device includes mounting a bottom wafer on a bottom chuck and mounting a top wafer on a top chuck, wherein one of the bottom chuck and the top chuck has a gasket. The top chuck is moved towards the bottom chuck. The gasket forms a sealed region between the bottom chuck and the top chuck around the top wafer and the bottom wafer. An ambient pressure in the sealed region is adjusted. The top wafer is bonded to the bottom wafer.

A method of forming a semiconductor device includes mounting a bottom wafer on a bottom chuck and mounting a top wafer on a top chuck, wherein one of the bottom chuck and the top chuck has a gasket. The top chuck is moved towards the bottom chuck. The gasket forms a sealed region between the bottom chuck and the top chuck around the top wafer and the bottom wafer. An ambient pressure in the sealed region is adjusted. The top wafer is bonded to the bottom wafer.

A chip peeling apparatus is provided that includes a housing having a seating surface for mounting a wafer, a recessed portion and a first vacuum suction hole in the seating surface, and a second vacuum suction hole, a blow hole and a protrusion in the recessed portion. The chip peeling apparatus further includes: a vacuum suction source that evacuates the first vacuum suction hole and the second vacuum suction hole; a pressure detector that detects a degree of vacuum of the second vacuum suction hole; a pressurization source that sends a fluid to the blow hole; a flow rate control valve; and a controller that determines a flow rate of the fluid to be sent to the blow hole, based on the degree of vacuum, and controls, via the flow rate control valve, the fluid sent from the pressurization source to flow at the determined flow rate.