A semiconductor device assembly includes a substrate and a first semiconductor device mounted to the substrate. An epoxy-based spacer is mounted to the substrate proximate to the first semiconductor device by an adhesive attached to a bottom surface of the epoxy-based spacer and to the substrate. A second semiconductor device is mounted directly to top surfaces of both the first semiconductor device and the epoxy-based spacer.

A semiconductor device assembly includes a substrate and a first semiconductor device mounted to the substrate. An epoxy-based spacer is mounted to the substrate proximate to the first semiconductor device by an adhesive attached to a bottom surface of the epoxy-based spacer and to the substrate. A second semiconductor device is mounted directly to top surfaces of both the first semiconductor device and the epoxy-based spacer.

An integrated circuit (IC) package, comprising a die having a first set of interconnects of a first pitch, and an interposer comprising an organic substrate having a second set of interconnects of a second pitch. The interposer also includes an inorganic layer over the organic substrate. The inorganic layer comprises conductive traces electrically coupling the second set of interconnects with the first set of interconnects. The die is attached to the interposer by the first set of interconnects. In some embodiments, the interposer further comprises an embedded die. The IC package further comprises a package support having a third set of interconnects of a third pitch, and a second inorganic layer over a surface of the interposer opposite to the die. The second inorganic layer comprises conductive traces electrically coupling the third set of interconnects with the second set of interconnects.

An integrated circuit (IC) package, comprising a die having a first set of interconnects of a first pitch, and an interposer comprising an organic substrate having a second set of interconnects of a second pitch. The interposer also includes an inorganic layer over the organic substrate. The inorganic layer comprises conductive traces electrically coupling the second set of interconnects with the first set of interconnects. The die is attached to the interposer by the first set of interconnects. In some embodiments, the interposer further comprises an embedded die. The IC package further comprises a package support having a third set of interconnects of a third pitch, and a second inorganic layer over a surface of the interposer opposite to the die. The second inorganic layer comprises conductive traces electrically coupling the third set of interconnects with the second set of interconnects.

A semiconductor structure includes a semiconductor chip, a substrate and a plurality of bump segments. The bump segments include a first group of bump segments and a second group of bump segments collectively extended from an active surface of the semiconductor chip toward the substrate. Each bump segment of the second group of bump segments has a cross-sectional area greater than a cross-sectional area of each bump segment of the first group of bump segments. The first group of bump segments includes a first bump segment and a second bump segment. Each of the first bump segment and the second bump segment includes a tapered side surface exposed to an environment outside the bump segments. A portion of a bottom surface of the second bump segment is stacked on the first bump segment, and another portion of the bottom surface of the second bump segment is exposed to the environment.

A thin semiconductor device with enhanced edge protection, and a method of manufacturing thereof. For example and without limitation, various aspects of this disclosure provide a thin semiconductor device comprising a substrate with an edge-protection region, and a method of manufacturing thereof.

In examples, a semiconductor package comprises a semiconductor die having a device side including circuitry and a non-device side opposing the device side. The semiconductor package comprises a polyimide substrate coupled to the non-device side of the semiconductor die by an adhesive layer. The semiconductor package comprises a conductive terminal coupled to the polyimide substrate by the adhesive layer, and a bond wire coupled to the device side of the semiconductor die and to the conductive terminal. The semiconductor package comprises a mold compound covering the semiconductor die, the polyimide substrate, the bond wire, and at least part of the conductive terminal, with the conductive terminal extending to an exterior of the mold compound.

An interposer device includes a core substrate, at least one embedded component formed within the core substrate, and at least one redistribution layer (RDL) on at least one of a first surface of the core substrate or a second surface of the core substrate opposite the first surface.

A substrate is disclosed. In one embodiment, the substrate comprises a substrate core including a plurality of through holes located therethrough, a plurality of metal pins aligned in the plurality of through holes, and at least one layer deposited on at least one of top and bottom surfaces of the substrate core. In one embodiment, the plurality of metal pins are aligned with the plurality of through holes such that each of the plurality of metal pins extends at least to both the top and bottom surface of the substate core. In some embodiments, the deposited at least one layer is deposited after the plurality of metal pins have been aligned in the through holes of the substrate core.

Microelectronic assemblies with glass cores with tapered insulator edges, as well as related devices and fabrication techniques, are disclosed. In one aspect, a microelectronic assembly according to an embodiment of the present disclosure may include a glass core (e.g., a layer of glass or a glass structure) having a first face, and an insulator material having a bottom face, a top face opposite the bottom face, and an outer edge extending between the bottom face and the top face. The top bottom face of the insulator material is on the glass core, and the outer edge of the insulator material tapers from a first perimeter at the bottom face to a second perimeter at the top face. The taper of the outer edge results in the first perimeter being larger than the second perimeter.