Patent classifications
H10W74/114
Ultra small molded module integrated with die by module-on-wafer assembly
Embodiments of the invention include molded modules and methods for forming molded modules. According to an embodiment the molded modules may be integrated into an electrical package. Electrical packages according to embodiments of the invention may include a die with a redistribution layer formed on at least one surface. The molded module may be mounted to the die. According to an embodiment, the molded module may include a mold layer and a plurality of components encapsulated within the mold layer. Terminals from each of the components may be substantially coplanar with a surface of the mold layer in order to allow the terminals to be electrically coupled to the redistribution layer on the die. Additional embodiments of the invention may include one or more through mold vias formed in the mold layer to provide power delivery and/or one or more faraday cages around components.
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
Provided is a semiconductor package including a first semiconductor chip; a plurality of lower first conductive posts on the first semiconductor chip; a second semiconductor chip offset-stacked on the first semiconductor chip; a plurality of lower second conductive posts on the second semiconductor chip; a first molding layer around the first semiconductor chip, and the second semiconductor chip; a third adhesive layer on an upper surface of the first molding layer; a plurality of upper first conductive posts on the plurality of lower first conductive posts; a plurality of upper second conductive posts on the plurality of lower second conductive posts; a third semiconductor chip on the third adhesive layer; a plurality of third conductive posts on the third semiconductor chip; a second molding layer on the third adhesive layer; and a redistribution structure on the second molding layer.
HIGHLY INTEGRATED ENVIRONMENTAL SENSOR
A system and method for a highly integrated environmental sensor and process for manufacturing said sensor is disclosed. Examples of the present disclosure may include an integrated sensor. The integrated sensor may include a redistribution layer (RDL). The integrated sensor may also include a control circuit coupled to the RDL. The integrated sensor may additionally include an analog front-end circuit coupled to the RDL and the control circuit. The integrated sensor may further include an environmental sensor coupled to the analog front-end circuit. The environmental sensor may include a first sensing element deposited in a first trench etched on the RDL using inkjet material deposition.
MOISTURE RESISTIVE FLIP-CHIP BASED MODULE
The present disclosure relates to a flip-chip based moisture-resistant module, which includes a substrate with a top surface, a flip-chip die, a sheet-mold film, and a barrier layer. The flip-chip die has a die body and a number of interconnects, each of which extends outward from a bottom surface of the die body and is attached to the top surface of the substrate. The sheet-mold film directly encapsulates sides of the die body, extends towards the top surface of the substrate, and directly adheres to the top surface of the substrate, such that an air-cavity with a perimeter defined by the sheet-mold film is formed between the bottom surface of the die body and the top surface of the substrate. The barrier layer is formed directly over the sheet-mold film, fully covers the sides of the die body, and extends horizontally beyond the flip-chip die.
Semiconductor Device and Method of Forming Heat Spreader with Surface Plasma Treatment for FCBGA-H Package
A semiconductor device has a substrate and an electrical component disposed over the substrate. A heat spreader with a plasma-enhanced surface is disposed over the electrical component. A TIM is disposed between the electrical component and plasma-enhanced surface of the heat spreader. The TIM can be deposited on the electrical component or plasma-enhanced surface. The plasma-enhanced surface contains argon ions and oxygen ions. The heat spreader is disposed in a reaction chamber. Reactant gases, such as argon and oxygen, are introduced into the reaction chamber. An electric field is formed within the reaction chamber to ionize the argon and oxygen and form the plasma-enhanced surface. The plasma-enhanced surface has properties of roughness and tacky-ness or adhesive property by nature of the surface exhibiting a chemical bonding group. An underfill material is deposited between the electrical component and substrate. The electrical component can be a flipchip type semiconductor die.
Panel-Level Chip Packaging Structure and Method Based on Steel Plate Platform
The present disclosure relates to the field of semiconductor packaging technologies, and in particular, to a panel-level chip packaging structure and method based on a steel plate platform. The packaging structure includes: a steel plate; a gold-nickel layer plated on the steel plate, where the gold-nickel layer is provided with upwardly protruding pins corresponding to a chip; the chip flipped to the corresponding pins; and a molded body coating the corresponding chip and the gold-nickel layer. According to the packaging structure and method of the present disclosure, an overall thickness of a chip-packaged product can be reduced. A wire bonding process and an electroplating process are further omitted, so that the overall thickness of chip packaging can be further reduced. An ultra-thin packaging structure can be implemented, the chip packaging efficiency can further be improved, and a complete-process chip packaging cycle can be shortened.
Embedded Package with Shielding Pad
A semiconductor package includes a laminate package substrate, first and second power transistor dies embedded within the laminate package substrate, a driver die embedded within the laminate package substrate, a plurality of I/O routings electrically connected with I/O terminals of the driver die, a switching signal pad electrically connected with a second load terminal of the first power transistor die and a first load terminal of the second power transistor die, and a shielding pad that is configured to electrically shield at least one of the I/O routings from the switching signal pad during operation of the first and second power transistor dies, wherein the shielding pad is exposed from the electrically insulating layer.
ELECTRONIC PACKAGE AND METHOD FOR MANUFACTURING AN ELECTRONIC PACKAGE
An electronic package is provided. The electronic package comprises a substrate having a first side and a second side, the substrate configured to receive one or more electronic components; a first electronic component mounted to the first side of the substrate; a first mold structure extending over at least part of the first side of the substrate; a group of through-mold connections provided on the first side of the substrate, the through-mold connections substantially formed of non-reflowable electrically conductive material; the first mold structure substantially encapsulating the group of through-mold connections; the group of through-mold connections exposed through the first mold structure. An electronic device comprising such an electronic package is also provided. A method of manufacturing such an electronic package is also provided.
Semiconductor Device and Method of Forming EMI Shielding Material in Two-Step Process to Avoid Contaminating Electrical Connector
A semiconductor device has a substrate and encapsulant deposited over the substrate. An electrical connector is disposed over the substrate outside the encapsulant. An antenna can be formed over the substrate. A first shielding material is disposed over a portion of the encapsulant without covering the electrical connector with the first shielding material. The first shielding material is disposed over the portion of the encapsulant and the portion of the substrate using a direct jet printer. A cover is disposed over the electrical connector. A second shielding material is disposed over the encapsulant to prevent the second shielding material from reaching the electrical connector. The second shielding material overlaps the first shielding material and covers a side surface of the encapsulant and a side surface of the substrate. The cover is removed to expose the electrical connector free of shielding material.
METHOD AND DEVICE FOR MANUFACTURING AN ELECTRONIC COMPONENT AND ELECTRONIC COMPONENT FORMED THEREBY
An electronic component manufacturing method for obtaining an electronic component in which a resin molded body and an object are integrally formed and the resultant device is provided. The method includes forming a resin distribution set by feeding a resin material in granular, powder, or liquid form onto a release film in a resin receiving portion to create a non-uniform distribution, wherein the resin material is thicker at a predetermined location than at other locations. The resin distribution set including the release film and placing the resin distribution set onto a lower mold such are lifted and placed over a cavity in a lower mold. The release film covers an inner surface of the cavity, positioning the resin material in the cavity. The resin material is compression-molded with the object in contact with the resin material located in the cavity to obtain the device.