A device and method for producing a semiconductor component. The method includes: arranging a dielectric layer between a first electrode and a second electrode of the semiconductor component, there being defects of a first defect type in the dielectric layer; determining a time period for movement of defects of the first defect type into a target position in the dielectric layer; determining a first voltage for the movement of said defects in the dielectric layer; applying the first voltage between the first electrode and the second electrode in the time period.

A package includes a corner, a device die, a molding material molding the device die therein, and a plurality of bonding features. The plurality of bonding features includes a corner bonding feature at the corner, wherein the corner bonding feature is elongated. The plurality of bonding features further includes an additional bonding feature, which is non-elongated.

A described example includes: a semiconductor die having a device side surface and an opposing backside surface, the backside surface mounted to a die pad of a lead frame, the lead frame comprising conductive leads spaced from the die pad; a conductor layer overlying the device side surface; bond pads including bond pad conductors formed in the conductor layer, a nickel layer over the bond pad conductors, and a palladium or gold layer over the nickel layer; conductor traces formed in the conductor layer, the conductor traces free from the nickel layer and the palladium or gold layer; bond wires bonded to the bond pads electrically coupling the bond pads to conductive leads; and mold compound covering the semiconductor die, the bond pads, the bond wires, and portions of the lead frame, wherein portions of the conductive leads are exposed from the mold compound to form terminals.

A wafer structure may include a substrate including device region and a scribe lane region in a plan view, a logic structure on the substrate, the logic structure including a plurality of peripheral circuits, and a cell array structure on the logic structure. The cell array structure may include a plurality of first dielectric layers vertically spaced apart from each other, a vertical channel structure on the device region of the semiconductor substrate and penetrating the plurality of first dielectric layers, a dummy pattern laterally spaced apart from the vertical channel structure, a first trench penetrating the plurality of first dielectric layers on the scribe lane region of the substrate, and a void in the first trench. The dummy pattern may cover a sidewall of the first trench and a bottom surface of the first trench.

An IC includes a substrate including circuitry configured to provide a receiver or a transmitter circuit. A metal stack is over the semiconductor surface including a top metal layer and a plurality of lower metal layers. An isolation capacitor includes the top metal layer as a top plate that is electrically connected to a first node; and a top dielectric layer on the top plate with a top plate dielectric aperture. One of the plurality of lower metal layers provides a bottom plate that includes a plurality of spaced apart segments. A capacitor dielectric layer is between the top and bottom plate. The segments include a first segment electrically connected to a second node and at least a second segment electrically connected to a third node, with separation regions located between adjacent spaced apart segments. The top plate covers at least a portion of each of the separation regions.

In a semiconductor device, a first structure including a first uneven unit and a second structure covering the first structure and including a second uneven unit are formed in a bonding region defined in a semiconductor substrate. Metal wiring is joined to the second uneven unit in the second structure. A depth of a recess in the second uneven unit is shallower than a depth of a recess in the first uneven unit. An insulating member defining the bonding region is formed so as to reach the semiconductor substrate.

A semiconductor package includes a first rewiring layer; a lower semiconductor chip on the first rewiring layer; an upper semiconductor chip on the lower semiconductor chip; a heat dissipation structure on the upper semiconductor chip; a molding layer on the first rewiring layer so as to contact side surfaces of the lower semiconductor chip, the upper semiconductor chip, and the heat dissipation structure; a second rewiring layer on the heat dissipation structure; and one or more connection structures on the first rewiring layer and positioned adjacent to the side surfaces of the lower semiconductor chip and the upper semiconductor chip and configured to extend through the molding layer and connect the first rewiring layer to the second rewiring layer, wherein the upper semiconductor chip and the heat dissipation structure contact each other.

The present invention provides a chip packaging structure and a chip packaging method. The chip packaging structure includes a substrate, a metal bonding pad disposed on the substrate and a metal wire, wherein the tail end of the metal wire is provided with a welding part, the welding part is welded to the metal bonding pad, the metal bonding pad is provided with a coating layer, and at least part of the welding part is located between the coating layer and the metal bonding pad. The present invention greatly improves a welding effect of the metal wire and the metal bonding pad, so that the welding of the metal wire and the metal bonding pad is more reliable and stable.

The present invention provides a chip packaging structure and a chip packaging method. The chip packaging structure includes a substrate, a metal bonding pad disposed on the substrate and a metal wire, wherein the tail end of the metal wire is provided with a welding part, the welding part is welded to the metal bonding pad, the metal bonding pad is provided with a coating layer, and at least part of the welding part is located between the coating layer and the metal bonding pad. The present invention greatly improves a welding effect of the metal wire and the metal bonding pad, so that the welding of the metal wire and the metal bonding pad is more reliable and stable.

A switching power device comprises a device lead-frame. Gates, Kelvin sources and a drain are formed on the device lead-frame, the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at the other end of the device lead-frame; and two gates and two Kelvin sources are provided. One end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure.