A sensor package structure and a manufacturing method thereof are provided. The sensor package structure includes a substrate, a fixing adhesive layer disposed on the substrate, a sensor chip adhered to the fixing adhesive layer, an annular adhering layer disposed on the sensor chip, a light-permeable sheet adhered to the annular adhering layer, and a plurality of metal wires that are electrically coupled to the substrate and the sensor chip. The size of the light-permeable sheet is smaller than that of the sensor chip.

The present invention provides a chip packaging structure and a chip packaging method. The chip packaging structure includes a substrate, a metal bonding pad disposed on the substrate and a metal wire, wherein the tail end of the metal wire is provided with a welding part, the welding part is welded to the metal bonding pad, the metal bonding pad is provided with a coating layer, and at least part of the welding part is located between the coating layer and the metal bonding pad. The present invention greatly improves a welding effect of the metal wire and the metal bonding pad, so that the welding of the metal wire and the metal bonding pad is more reliable and stable.

A semiconductor device according to one aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and extends in a direction forming an angle of 30 to 30 with respect to the first direction. A semiconductor device according to another aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and has a joint portion that is long in one direction in plan view and an angle of a long direction of the joint portion with respect to the first direction is 30 to 30.

A semiconductor device having an improved bonding reliability of wire bonding is provided. The semiconductor device includes a semiconductor chip, a die pad, an inner lead, and a bonding wire. The semiconductor chip has a first lower surface, and a bonding pad provided on a first upper surface. The bonding pad has a second upper surface. The die pad has a third upper surface. The inner lead has a fourth upper surface. The semiconductor chip is mounted on the die pad such that the first lower surface faces the third upper surface. The bonding pad and the inner lead are electrically connected to each other via the bonding wire. In cross-sectional view, the second upper surface, to which the bonding wire is connected, of the bonding pad is located at the same height as the fourth upper surface, to which the bonding wire is connected, of the inner lead.

Implementations of an image sensor package may include an image sensor die including at least one bond pad thereon; a bond wire wirebonded to the at least one bond pad; and an optically transmissive lid coupled to the image sensor die with an optically opaque film adhesive over the at least one bond pad. The bond wire may extend through the optically opaque film adhesive to the at least one bond pad.

A copper interconnect structure for an integrated circuit chip is provided for forming a good electrical solder connection with a large-sized metal wire easily. The copper interconnect structure includes a copper surface, a metal barrier layer, and a weldable metal layer. The weldable metal layer is formed with a thickness ranging from 0.03 micrometers to 0.05 micrometers over the metal barrier layer.

A bonding apparatus configured to bond substrates comprises a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder, and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a mover configured to move the first holder and the second holder relatively in a horizontal direction; a laser interferometer system configured to measure a position of the first holder or the second holder which is moved by the mover; a linear scale configured to measure a position of the mover; and a controller configured to control the mover based on a measurement result of the laser interferometer system and a measurement result of the liner scale.

An electronic device includes a package structure, a lead, a heat slug, a semiconductor die, and a bond wire. The package structure has opposite first and second sides, and opposite third and fourth sides spaced along a first direction. The heat slug has a first portion partially exposed outside the second side of the package structure, and a second portion with slots extending inwardly along the first direction and fins between respective pairs of the slots, where the fins are enclosed by the package structure and spaced along an orthogonal second direction. The semiconductor die is attached to the heat slug, and the bond wire has a first end connected to the lead and a second end connected to a circuit of the semiconductor die.

A method of determining a sequence for creating a plurality of wire loops is provided. The method includes (a) providing workpiece data for a workpiece. The workpiece data includes (i) position data for bonding locations of the workpiece, and (ii) wire loop data for a plurality of wire loops providing interconnection between ones of the bonding locations. The method also includes (b) analyzing the workpiece data. The step of analyzing includes considering overlap conditions between ones of the plurality of wire loops, considering wire loop heights of ones of the plurality of wire loops, considering lateral bend conditions between ones of the plurality of wire loops, and considering wire loop positions for ones of the plurality of wire loops. The method also includes (c) providing a sequence of creating the plurality of wire loops in connection with the workpiece at least partially based on the results of step (b).

A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.