In examples, a semiconductor package includes a semiconductor die having a device side in which circuitry is formed and a non-device side opposite the device side. The package includes a die attach film contacting the non-device side of the semiconductor die; a first conductive terminal contacting the die attach film, the semiconductor die cantilevered by the first conductive terminal; a second conductive terminal separated from the die attach film, the first and second conductive terminals configured to operate in different voltage domains; bond wires coupling the device side of the semiconductor die to the first and second conductive terminals; and a mold compound contacting the semiconductor die, the die attach film, the first and second conductive terminals, and the bond wires, the mold compound present in between the die attach film and the second conductive terminal, each of the first and second conductive terminals exposed from at least one lateral surface of the mold compound.

The present disclosure relates to a method of manufacturing a semiconductor device, specifically of the connection of a bonding wire to a semiconductor die. In a first aspect of the disclosure, there is provided a method of manufacturing a semiconductor device, including the steps of: providing a semiconductor die onto a substrate; applying a paste to the semiconductor die; and connecting a bonding wire to the paste by ultrasonic motion.

A semiconductor package includes a package substrate, a plurality of first semiconductor chips stacked on an upper surface of the package substrate in a stair-step configuration, the plurality of first semiconductor chips having an uppermost semiconductor chip at a first height from the upper surface of the package substrate, the uppermost semiconductor chip including a free end portion. Conductive wires respectively electrically connect chip pads of the first semiconductor chips to substrate pads of the package substrate. A plurality of first support structures each have a first end attached to the upper surface of the package substrate and an opposite second end attached to the free end portion of the uppermost semiconductor chip. The first support structures are inclined at an angle relative to the package substrate.

An assembly comprising a substrate with a first and second bond pad at a top surface; and a semiconductor die with a lower surface coupled to the top surface, an upper surface with a third and fourth bond pad thereat, and a side surface perpendicular to the upper and lower surfaces. The first bond pad can be a first distance, the second bond pad can be a second distance, the third bond pad can be a third distance, and the fourth bond pad can be a fourth distance, respectively, from the side surface. The first and third distances summed can be the same as the second and fourth distances summed. A first wire can extend between the first and third bond pads, and a second wire can extend between the second and fourth bond pads.

A method of determining a new search height for a wire bonding process is provided. The method includes the steps of: providing a search height; performing a plurality of wire bonding operations using the search height; monitoring wire bonding evaluation criteria during each of the plurality of wire bonding operations; and determining a new search height using the monitored wire bonding evaluation criteria.

A lead frame including a die pad having a first surface and a second surface opposite the first surface, a lead having a third surface flush with the first surface and a fourth surface opposite the third surface, and a link portion connecting the die pad and the lead, wherein the link portion includes a first portion that surrounds the die pad between the die pad and the lead in a plan view, wherein the first portion has a fifth surface flush with the first surface and the third surface, and has a sixth surface opposite the fifth surface, wherein the second surface is closer to a plane containing the first surface, the third surface, and the fifth surface than is the fourth surface, and wherein the sixth surface is closer to the plane containing the first surface, the third surface, and the fifth surface than is the second surface.

A bump-forming device includes a bonding tool and a bonding controller. The bonding controller is configured to execute a crimping step, a delivery step, a pressing step, and a cutting step, and of the trajectories of the bonding tool, at least the trajectory in the delivery step is determined on the basis of a first parameter relating to a wire (w) and a second parameter relating to the shape of the bonding tool.