Embodiments of the invention include molded modules and methods for forming molded modules. According to an embodiment the molded modules may be integrated into an electrical package. Electrical packages according to embodiments of the invention may include a die with a redistribution layer formed on at least one surface. The molded module may be mounted to the die. According to an embodiment, the molded module may include a mold layer and a plurality of components encapsulated within the mold layer. Terminals from each of the components may be substantially coplanar with a surface of the mold layer in order to allow the terminals to be electrically coupled to the redistribution layer on the die. Additional embodiments of the invention may include one or more through mold vias formed in the mold layer to provide power delivery and/or one or more faraday cages around components.

Implementations of a silicon-in-insulator (SOI) semiconductor die may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be included through a silicon layer coupled to a insulative layer.

A semiconductor device has a first RDL substrate with first conductive pillars formed over a first surface of the first RDL substrate. A first electrical component is disposed over the first surface of the first RDL substrate. A hybrid substrate is bonded to the first RDL substrate. An encapsulant is deposited around the hybrid substrate and first RDL substrate with the first conductive pillars and first electrical component embedded within the encapsulant. A second RDL substrate with second conductive pillars formed over the second RDL substrate and second electrical component disposed over the second RDL substrate can be bonded to the hybrid substrate. A second RDL can be formed over a second surface of the first RDL substrate. A third electrical component is disposed over a second surface of the first RDL substrate. A shielding frame is disposed over the third electrical component.

A semiconductor device has a substrate. A first electrical component and second electrical component are disposed over the substrate. A zero-ohm resistor is disposed over the substrate between the first electrical component and second electrical component. An encapsulant is deposited over the substrate, first electrical component, second electrical component, and first zero-ohm resistor. An opening is formed through the encapsulant to the first zero-ohm resistor. A shielding layer is formed over the encapsulant and into the opening.

A semiconductor device has a substrate and a slot formed in the substrate. A first electrical component is disposed over the substrate adjacent to the slot. An encapsulant is deposited over the first electrical component with a surface of the encapsulant coplanar to a surface of the substrate within the slot. A shielding layer is formed over the encapsulant and physically contacting the surface of the substrate within the slot. The substrate is singulated to form a semiconductor package with the first electrical component after forming the shielding layer.

A semiconductor device has a sacrificial substrate and an electrical component disposed over the sacrificial substrate. A bump stop layer is formed within the sacrificial substrate. At least a portion of the bump or terminal of the electrical component is embedded into the sacrificial substrate to contact the bump stop layer. An encapsulant is deposited over the electrical component and sacrificial substrate. A channel is formed through the encapsulant and partially into the sacrificial substrate. The sacrificial substrate is removed to leave a bump or terminal of the electrical component extending out from the encapsulant. A thickness of the semiconductor device is determined by a thickness of the encapsulant and bump extending out from the encapsulant. A portion of the encapsulant can be removed to reduce the thickness of the semiconductor device. A conductive paste can be deposited over the bump or terminal extending out from the encapsulant.

Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.

An electronic component manufacturing method for obtaining an electronic component in which a resin molded body and an object are integrally formed and the resultant device is provided. The method includes forming a resin distribution set by feeding a resin material in granular, powder, or liquid form onto a release film in a resin receiving portion to create a non-uniform distribution, wherein the resin material is thicker at a predetermined location than at other locations. The resin distribution set including the release film and placing the resin distribution set onto a lower mold such are lifted and placed over a cavity in a lower mold. The release film covers an inner surface of the cavity, positioning the resin material in the cavity. The resin material is compression-molded with the object in contact with the resin material located in the cavity to obtain the device.

A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

An electronic package includes an electronic component including terminals, a plurality of surface contacts, at least some of the surface contacts being electrically coupled to the terminals within the electronic package, a mold compound covering the electronic component and partially covering the surface contacts with a bottom surface exposed from the mold compound, and a plurality of wires extending from exposed surfaces of the surface contacts, each of the wires providing a solderable surface for mounting the electronic package at a standoff on an external board.