The semiconductor device includes an element support, first and second semiconductor elements on the element support, an insulating element insulating the first and the second semiconductor elements from each other, and an insulating substrate. The insulating element includes a first transceiver electrically connected to the first semiconductor element, a second transceiver electrically connected to the second semiconductor element, and an interfacing member for transmitting and receiving signals between the first and the second transceivers. The interfacing member is closer to the element support than the first and the second transceivers. The insulating substrate is between the element support and the insulating element and bonded to the element support. The insulating element is bonded to the insulating substrate.

A semiconductor device includes a first die pad, a first semiconductor element, a second die pad, a second semiconductor element, a sealing resin, a first lead, a second lead, a third lead, and a fourth lead. The first lead, the second lead, the third lead, and the fourth lead are each spaced apart from the third side and the fourth side of the sealing resin and are exposed externally from either the first side surface or the second side surface of the sealing resin. Viewed in a third direction perpendicular to the first direction and the second directions, an area of the first die pad is larger than an area of the second die pad. Viewed in the third direction, each of the first lead and the third lead is separated away in the first direction from a first virtual line toward a side where the first side surface of the sealing resin is located.

An encapsulated integrated circuit includes an integrated circuit (IC) die. An encapsulation material encapsulates the IC die. Within the encapsulation material, a phononic bandgap structure is configured to have a phononic bandgap with a frequency range approximately equal to a range of frequencies of thermal phonons produced by the IC die when the IC die is operating.

In a described example, an apparatus includes: a package substrate with conductive leads; a semiconductor die mounted to the package substrate, the semiconductor die having a first thickness; electrical connections coupling bond pads on the semiconductor die to conductive leads on the package substrate; brackets attached to the package substrate spaced from the semiconductor die and extending away from the package substrate to a distance from the package substrate that is greater than the first thickness of the semiconductor die; and mold compound covering the package substrate, the semiconductor die, the brackets, and the semiconductor die to form a semiconductor device package having a board side surface and a top surface opposite the board side surface, and having portions of the brackets exposed from the mold compound on the top surface of the semiconductor device package to form mounts for a passive component.

A semiconductor package structure includes a substrate with a substrate surface, a processing device electrically coupled to the substrate surface, one or more radio frequency integrated circuits (RFIC(s)) electrically coupled to the substrate surface, and a shield plate. The shield plate is disposed between the one or more RFIC(s) and the processing device and is configured to couple the one or more RFIC(s) to a package ground via one or more conductors. The package ground has a ground voltage associated with the semiconductor package structure.

A device comprises a substrate) of a first material with a surface, which is modified by depositing a bi-layer nanoparticle film. The film includes a nanoparticle layer of a second material on top of and in contact with surface, and a nanoparticle layer of a third material on top of and in contact with the nanoparticle layer of the second material. The nanoparticles of the third material adhere to the nanoparticles of the second material. The substrate region adjoining surface comprises an admixture of the second material in the first material. A fourth material contacts and chemically/mechanically bonds to the nanoparticle layer of the third material.

A semiconductor arrangement includes first and second controllable semiconductor devices forming a half-bridge arrangement, each controllable semiconductor device including a control electrode and a controllable load path between a first load electrode and a second load electrode. At least one gate driver is configured to generate one or more control signals for one or more of the controllable semiconductor devices. The first controllable semiconductor device is arranged on and electrically coupled to a first lead frame of a plurality of lead frames. The second controllable semiconductor device is arranged on and electrically coupled to a second lead frame of the plurality of lead frames. The controllable semiconductor devices and the at least one gate driver are arranged in a molded package. Each lead frames is partly covered by the molded package and has at least one surface or section that is not covered by the molded package.

A semiconductor device includes a plurality of semiconductor elements, each of which has a first electrode, a second electrode, and a third electrode, and is subjected to an ON-OFF control between the first electrode and the second electrode in accordance with a driving signal input to the third electrode. Further, the semiconductor device includes a control terminal to which the driving signal is input, a first wiring portion to which the control terminal is connected, a second wiring portion separated from the first wiring portion, a first connection member to conduct the first wiring portion and the second wiring portion, and a second connection member to conduct the second wiring portion and the third electrode of one of the plurality of semiconductor elements. The respective first electrodes of the plurality of semiconductor elements are electrically connected to one another, and respective second electrodes of the plurality of semiconductor elements are electrically connected to one another.

A roll-to-roll sintering system for wide inorganic tape material may include a spool on which is wound a continuous tape material comprising a green tape material and a backing layer, a take-up reel, and a heating station including at least one furnace. The heating station is configured to receive an unwound length of the continuous tape. The heating station further includes a first curved section such that the continuous tape material is bent through a radius of curvature of 0.01 m to 13,000 m, and at least two rollers defining the first curved section over which the continuous tape material is bent. The heating station is controlled to provide at least a portion of the heating station with an air free atmosphere, that being at least one of vacuum, hydrogen, or helium.

A semiconductor apparatus includes a substrate, a semiconductor device arranged on an upper surface of the substrate, a lead frame bonded to an upper surface of the semiconductor device via a bonding material, the lead frame having a first recess on an upper surface thereof, a wire connected to the first recess, and a resin that seals the substrate, the semiconductor device, the lead frame, and the wire.