Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises performing a first vacuum processing procedure on a substrate, obtaining temperature measurements of the substrate from a vacuum thermocouple, obtaining temperature measurements of the substrate from a non-contact infrared sensor, calibrating the non-contact infrared sensor based on the temperature measurements from the vacuum thermocouple and the temperature measurements from the non-contact infrared sensor, and performing a second vacuum processing procedure on the substrate using the calibrated non-contact infrared sensor.

Systems and methods for real-time control of temperature within a plasma chamber are described. One of the methods includes sensing a voltage in real time of a rail that is coupled to a voltage source. The voltage source supplies a voltage to multiple heater elements of the plasma chamber. The voltage that is sensed is used to adjust one or more duty cycles of corresponding one or more of the heater elements. The adjusted one or more duty cycles facilitate achieving and maintaining a temperature value within the plasma chamber over time.

Disclosed is a support unit. The support unit that supports a substrate may include a chuck stage that is rotatable, a heating member disposed above the chuck stage and that heats the substrate supported by the support unit, a power source that applies electric power to the heating member, a window disposed above the chuck stage and defining an interior space, in which the heating member is disposed, and an interlock module that selectively cuts off the electric power applied to the heating member.

A heat treatment apparatus includes a processing chamber that heat-treats a substrate, a heating unit that heats the processing chamber from outside, and an internal physical sensor that measures a temperature inside the processing chamber. The heat treatment apparatus further includes a prediction unit that predicts a measurement temperature of an external virtual sensor that is a virtualized version of an external physical sensor that measures a temperature near the heating unit, using a physical model that reproduces a physical configuration of a heat treatment furnace by simulation, and a temperature control unit that controls power supplied to the heating unit based on the measurement temperature of the internal physical sensor and the measurement temperature of the external virtual sensor.

An information processing apparatus including: an acquisition unit that acquires a process log for each execution of the same process including a plurality of process steps in one or more substrate processing apparatuses that execute the process according to a recipe; an analysis unit that compares, based on the process logs, step times taken for the same process step and analyzes a process step having time variation as time-variable step; and a display control unit that displays information related to the time-variable step.

An information processing apparatus performs a performance evaluation of a recipe of a substrate processing apparatus performing a film formation processing based on the recipe. The information processing apparatus includes: a prediction unit that predicts a film formation result of the substrate processing apparatus performing the film formation processing based on the recipe; a recipe performance evaluation unit that performs the performance evaluation of the recipe for each evaluation item based on the predicted film formation result of the substrate processing apparatus; and a display control unit that displays the performance evaluation of the recipe for each evaluation item.

Aspects of the present disclosure provide a sensor for remote temperature measurement. For example, the sensor can include a light source configured to form an illumination beam, focusing optics configured to direct the illumination beam from the light source onto a semiconductor sample at an illuminated spot thereof, for exciting bandgap photoluminescence (PL) light in the semiconductor sample, collection optics configured to collect the bandgap PL light excited from the semiconductor sample, at least one optical detector configured to measure spectral intensities of the bandgap PL light in a vicinity of a semiconductor bandgap wavelength of the semiconductor sample, and transmission optics configured to transmit the bandgap PL light from the collection optics to the at least one optical detector.

A method includes selecting a state model control, as an operational state of the heater, from among a plurality of state model controls, measuring an electrical characteristic of the heater, where the electrical characteristic includes at least one of an electric current and a voltage, and controlling power to the heater based on the selected operational state and based on the measured electrical characteristic.

A substrate processing apparatus, includes: a rotary holder configured to hold and rotate a substrate; a processing liquid supply configured to supply a processing liquid to the substrate held and rotated by the rotary holder; a heater including a heat source configured to heat the substrate or the processing liquid in contact with the substrate in a non-contact manner; a temperature measurer arranged at a position facing the rotary holder and configured to measure a temperature of a heating target object heated by the heater in a non-contact manner; and a stop controller configured to stop supply of electric power to the heater when it is determined that the temperature measured by the temperature measurer exceeds a preset temperature.

A method of operating a reactor apparatus during a deposition process includes controlling the reactor apparatus to initiate the deposition process; receiving temperature feedback signals from temperature sensors positioned in respective zones of the reactor apparatus; during each process step of at least two process steps: applying a respective set of offsets to the temperature feedback signals received from the temperature sensors, wherein the set of offsets applied for each process step are predetermined for the respective process step to control a characteristic of the semiconductor wafer following the respective process step; and transmitting power instructions to heating devices each positioned in one of the zones of the reactor apparatus, wherein the power instructions are determined by executing feedback control using the temperature feedback signals with the applied set of offsets and a target temperature for the respective process step.