A substrate processing apparatus includes a holding unit, a liquid supply unit, a collection unit, a circulation path, a gas supply unit, and a control unit. The holding unit holds a substrate. The liquid supply unit supplies a processing liquid to a first main surface of the substrate held by the holding unit. The collection unit collects the processing liquid used for processing the substrate. The circulation path returns the processing liquid collected by the collection unit back to the liquid supply unit. The gas supply unit supplies a gas to a second main surface to the substrate held by the holding unit in a direction opposite to the first main surface. The control unit supplies the gas to the second main surface when supplying the processing liquid to be returned to the liquid supply unit by the circulation path to the first main surface.

An integrated circuit device includes a heating element, and a control circuit configured to control flow of a current through the heating element. An outer shape of the integrated circuit device has a first side and a second side intersecting the first side. An outer shape of the heating element has a short side and a long side. A distance between the long side of the heating element and the first side of the integrated circuit device is larger than a distance between the short side of the heating element and the second side of the integrated circuit device.

An apparatus includes a processing chamber, a substrate support in the processing chamber, a plasma source coupled to the processing chamber, and a plurality of heating devices arranged on the processing chamber. Each heating device is configured to emit laser beam on a substrate positioned on the substrate support to heat the substrate.

According to an embodiment, a substrate processing method includes forming a liquid film on a substrate including a first region provided with a first film on an outermost surface thereof and a second region provided with a second film on an outermost surface thereof, the first film and the second film being different from each other in material. The method further includes forming a solidified film by solidifying the liquid film. The method further includes causing the solidified film on the first region to melt prior to the solidified film on the second region.

Embodiments of the present disclosure relate to temperature and film adjustments for process chambers, and related systems and methods. In one or more embodiments, a substrate processing system includes a chamber body at least partially defining a processing volume, and a substrate support disposed in the processing volume and configured to support a substrate. The substrate processing system includes one or more gas inlets operable to provide a processing gas that flows horizontally across the processing volume and over the substrate support, and one or more heat sources operable to heat the substrate. The substrate processing system includes a laser source operable to direct energy to the substrate to provide supplemental heating, a thickness sensor operable to measure a film thickness on the substrate, and a controller operable to control the laser source based on the measured film thickness.

A substrate processing apparatus including a temperature sensor according to the present disclosure includes a substrate holder which fixes a substrate by an electrostatic force and a body unit which is disposed below the substrate holder and includes a thermal conductivity adjustment channel which adjusts a thermal conductivity based on a pressure formed by a thermal conductivity adjustment gas. A fiber Bragg grating (FBG) temperature is installed in the substrate holder and the FBG temperature sensor is installed in a hollow formed in the substrate holder.

Systems, methods, and devices for in-situ calibration of a second sensor use a first sensor, with the two sensors operating in different optical regimes and/or based on different optical effects. In some embodiments, the methods employ a reference wafer having two regions that have different optical properties to calibrate a temperature sensor. Prior to the in-situ calibration, the first sensor is calibrated over a range of temperatures. During the in-situ calibration, the first sensor reads a first spot in the first region of the reference wafer and a second sensor reads a second spot in the second region that is close to the first spot.

Embodiments disclosed herein include sensor devices. In an embodiment, a sensor device comprises a substrate, a first sensor of a first type on the substrate, where a catalytic layer is provided as at least part of the first sensor, a second sensor of the first type on the substrate and adjacent to the first sensor, and a lid over the substrate, where an opening through the lid is provided over the first sensor and the second sensor.

The disclosure provides a temperature compensation system, including a cavity, a temperature feedback module, a heating plate, a main heating module, a multi-zone temperature control module, a distributed temperature control module and at least one auxiliary temperature adjustment module, wherein at least one temperature control compensation area is arranged at a bottom surface of the heating plate, and the auxiliary temperature adjustment module and the temperature control compensation area are arranged in a correspondence manner; the temperature feedback module performs temperature detection on the heating plate to obtain a first temperature value and a second temperature value; the multi-zone temperature control module controls the main heating module to perform temperature adjustment on the heating plate according to the first temperature value, and the distributed temperature control module controls the auxiliary temperature adjustment module to perform temperature compensation adjustment on the temperature control compensation area according to the second temperature value. Complicated outgoing design is avoided, less volume space is occupied, the cost is reduced and the temperature control accuracy is high. The disclosure further provides a semiconductor device and a temperature compensation method.

A method of cleaning a process chamber is provided including supplying a plasma from a remote plasma source to an interior volume of a rapid thermal processing chamber during a first time period, the rapid thermal processing chamber including a plurality of lamps configured to heat an interior volume of the rapid thermal processing chamber; and providing heat from the plurality of lamps to heat the interior volume of the rapid thermal processing chamber during the first time period when the plasma from the remote plasma source is provided to the interior volume of the rapid thermal processing chamber.