A substrate processing method using a substrate processing apparatus which comprises a process chamber in which a reaction space is formed to process a substrate in which a composite layer pattern having a plurality of first insulating layers and a plurality of second insulating layers alternately stacked thereon is formed, a substrate support unit, a gas distribution unit, and a plasma reactor, the method comprising the steps of: heating the substrate support unit and the gas distribution unit such that a temperature of the gas distribution unit is maintained equal to or lower than a temperature of the substrate support unit; supplying a reactive gas including a halogen-containing gas to the plasma reactor; generating radicals by applying power to the plasma reactor to activate the halogen-containing gas; and at least partially etching the plurality of first insulating layers in a lateral direction selectively with respect to the plurality of second insulating layers by supplying the radicals onto the substrate mounted on the substrate support unit through the gas distribution unit.

The disclosure provides a semiconductor substrate heating device, comprising a heating cavity, a main heating part, a compensation control part and at least one temperature compensation unit. The compensation control part and several temperature compensation units are arranged in the heating cavity of the semiconductor substrate heating device, a top surface of the compensation control part and a bottom surface of a heating plate are arranged in a correspondence manner, and the several temperature compensation units arranged between the heating plate and the compensation control part and being in communication connection with the compensation control part are arranged in one-to-one correspondence with several temperature control compensation areas at the bottom surface of the heating plate. Complicated outgoing design is avoided, and temperature compensation adjustment can be performed on the temperature control compensation areas under the control of the compensation control part, thereby effectively controlling the temperature uniformity of the semiconductor substrate with as little manufacturing and maintenance costs as possible.

Provided are nitride atomic layer etch including in situ generating a phosphoric acid on the surface of silicon nitride layer by reacting a phosphorus containing reactant with one or more oxidants. Phosphoric acid selectively etches silicon nitride layer over silicon oxide and/or silicon.

Embodiments of a temperature sensor system are disclosed. In one embodiment, the system includes a sensing element configured to be in thermal communication with a structural element of a semiconductor processing chamber, wherein the sensing element is configured to emit a return beam in response to a source beam emitted by a light source. The system further comprises an optical pathway spaced apart from the sensing element and where the optical pathway is configured to conduct the source beam to the sensing element and to conduct a portion of the return beam from the sensing element to a detector. A boundary is disposed between the optical pathway and the sensing element. The boundary is at least partially transparent to the source beam and to the return beam. The controller is configured to calculate a temperature of the sensing element based on at least one characteristic of the return beam.

A system includes one or more semiconductor processing chambers, and a processing fluid supply system which includes an input portion configured to receive a first fluid from a first fluid source, and a heated flow portion configured to deliver a heated processing fluid including the first fluid to the one or more semiconductor processing chambers. A waste system is configured to receive hot waste fluid from the heated flow portion and/or the one or more semiconductor processing chambers. A heat pump includes a source loop and a load loop, the source loop being thermally coupled to an external heat source. A first heat exchanger includes a first supply-side flow path in fluid communication with the input portion, and a first heat delivery-side flow path in fluid communication with the load loop such that the heat exchanger heats the first fluid before the first fluid enters the heated flow portion.

A system includes one or more semiconductor processing chambers, and a processing fluid supply system including an input portion configured to receive a first fluid from a first fluid source, a heater fluidly coupled to the input portion and configured to heat the first fluid, and a heated flow portion fluidly coupled to the heater and configured to deliver a heated processing fluid including the first fluid heated by the heater to the one or more semiconductor processing chambers. A waste system is configured to receive hot waste fluid from the heated flow portion and/or a semiconductor processing chamber. A heat exchanger includes a supply-side flow path in fluid communication with the input portion and a heat delivery-side flow path in fluid communication with the waste system. The heat exchanger is configured to transfer thermal energy from the waste system to the input portion to heat the first fluid.

Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy vacuum.

There is provided a technique including: at least one pipe heater configured to heat at least one gas pipe configured to supply a gas to a process chamber in which a substrate is processed; at least one temperature detector configured to detect a temperature of the at least one gas pipe; at least one temperature controller configured to be capable of, based on the temperature detected by the at least one temperature detector, outputting a manipulated variable indicating electric power to be supplied to the at least one pipe heater, and controlling the temperature of the at least one gas pipe to approach at least one desired setpoint; and a host controller configured to be capable of controlling start and stop of heating of the at least one gas pipe performed under the control of the at least one temperature controller.

A substrate processing method includes providing a substrate formed with a stacked film including at least an etching target film, an underlying layer disposed below the etching target film, and a mask disposed above the etching target film; etching the etching target film through the mask using plasma; and performing heat treatment on the substrate at a predetermined temperature after the etching. At least one of the mask and the underlying layer contains a transition metal.

A temperature control system of a semiconductor manufacturing device includes first and second heating media storages that respectively store low-temperature heating media and high-temperature heating media, a mixing device including a mixing valve that mixes the low-temperature heating media and the high-temperature heating media at a predetermined mixing ratio, and a control device. The mixing device provides mixed heating media to a load, and distributes recovered heating media recovered from the load to the first and second heating media storages. The control device is configured to, by performing feed-forward control and feedback control over a mixing unit temperature using a relationship model between a reference temperature representing a temperature of heating media passing through the load and the mixing unit temperature which is a temperature of heating media output by the mixing valve, control the mixing ratio such that the reference temperature has a target reference temperature.