A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

Methods and apparatus for controlling substrate temperature includes: measuring a substrate that has undergone a deposition process; analyzing measurements of the substrate to detect a defect of the substrate; and sending a feedback signal to modify a temperature control parameter of a temperature controller used in controlling a temperature of the substrate in the deposition process based on the analyzing if a defect is detected, and not sending a feedback signal to modify the temperature control parameter if a defect is not detected.

An edge ring used in a chamber comprises a cover with an internal space, a circuit board disposed in the internal space of the cover and at least one electrical element disposed on the circuit board. Here, the electrical element includes a temperature sensor, and temperature of the edge ring, heat distribution generated when ion bombardment occurs in plasma state or heat flux in the edge ring is measured by using the temperature sensor.

A heating device using an LED is provided. The heating device includes a heater for heating a target with LED light, an LED controller for controlling power supplied to the LED such that a temperature of the target is adjusted with the power being in the range where a current thereof does not exceed an allowable current Imax, a correction unit for correcting Imax, and a voltage measurement unit for measuring a voltage of the LED. The correction unit estimates a junction temperature Tjm of the LED when Imax is supplied based on a measurement result by the voltage measurement unit when an estimation current Ie is supplied after Imax is supplied to the LED for correction. When Tjm of the LED when Imax is supplied exceeds Tmax corresponding to Imax, the correction unit corrects Imax.

A holder temperature detection method which measures a temperature of a rotatable holder that holds a substrate is provided. The method comprises a step of irradiating a fluorescent body thermally mounted on the holder with a light pulse having a first wavelength, a step of detecting fluorescence having a second wavelength emitted from the fluorescent body due to the light pulse and a step of estimating the temperature of the holder based on the detected fluorescence.

A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.

Provided is a wafer treatment apparatus capable of measuring warpage of a wafer, the wafer treatment apparatus including a support plate providing a surface on which the wafer is supported, a temperature control channel mounted in the support plate to provide a path through which a fluid flows, and a plurality of warpage measurers disposed on the support plate and having lower ends mounted to be vertically spaced apart from an upper portion of the temperature control channel.

An electrostatic chuck includes a base plate and a ceramic dielectric substrate. The ceramic dielectric substrate has a first major surface. The first major surface includes at least a first region and a second region. At least one first gas introduction hole connected to at least one of multiple first grooves. The first grooves include a first boundary groove, and at least one first in-region groove. Multiple second grooves and at least one second gas introduction hole are provided in the second region. The second grooves are include a second boundary groove extending along the first boundary and are provided to be most proximal to the first boundary. A groove end portion-end portion distance between the first boundary groove and the second boundary groove is smaller than a groove end portion-end portion distance between the first boundary groove and the first in-region groove.

A solder reflow system that includes a vacuum chamber and a sample chuck in the vacuum chamber to support a semiconductor wafer to be processed. The solder reflow system further include a heating element coupled to the vacuum chamber and configured to heat the semiconductor wafer, a thermocouple connected to the sample chuck to measure a temperature of the semiconductor wafer, a pyrometer positioned to detect an optical signal from the semiconductor wafer to estimate the temperature of the semiconductor wafer. The control system is configured to control the heating element to heat the semiconductor wafer, obtain one or more measurements of the temperature of the semiconductor wafer from the thermocouple and one or more estimates of the temperature of the semiconductor wafer from the pyrometer during the heating of the semiconductor wafer, and determine a modification of the heating of the semiconductor wafer based on the obtained measurements.

A target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate at a process chamber of a manufacturing system is identified. Data of the target concentration profile is processed using a model. The model outputs a set of deposition process settings that corresponds to the target concentration profile. One or more operations of the deposition process are performed in accordance with the set of deposition process settings.