Substrate processing apparatuses and methods of manufacturing a semiconductor device using the same may be provided. A substrate processing apparatus includes a heater in a support plate and comprising a first unit configured to heat a first portion of a substrate and a second unit configured to heat a second portion of a substrate, and processing circuitry configured to heat the heater in a transient section such that the first unit heats the first portion of the substrate to a first heating temperature, and the second unit heats the second portion of the substrate to a second heating temperature different from the first heating temperature, the transient section being a section before a temperature of the substrate reaches a steady state, a steady section being a section after the temperature of the substrate reaches the steady state.

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

There is provided a technique capable of capable of preventing a substrate from being metal-contaminated by a component constituting a furnace opening. According to one aspect thereof, there is provided a furnace opening structure including: an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube; a lower inlet structure connected to the upper inlet structure via a second seal; and a fixing structure connected to the upper inlet structure and configured to fix the first protrusion, wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.

Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.

Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

A semiconductor wafer mass metrology method comprising: controlling the temperature of a semiconductor wafer by: detecting information relating to the temperature of the semiconductor wafer; and controlling cooling or heating of the semiconductor wafer based on the detected information relating to the temperature of the semiconductor wafer; wherein controlling the cooling or heating of the semiconductor wafer comprises controlling a duration of the cooling or heating of the semiconductor wafer; and subsequently loading the semiconductor wafer onto a measurement area of a semiconductor wafer mass metrology apparatus.

A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below 20 C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device, is configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the substrate, another substrate bonded before the substrate is bonded, or the substrate bonding device, and the two substrates are bonded to each other by a contact region expanding after the contact region is formed in a center.