The present invention provides a measuring apparatus for measuring a wafer carrier having an opening end and at least one gas tower deposited inside, the measuring apparatus comprising a carrying interface for securing the wafer carrier. The opening end of the wafer carrier faces an inspection space of measuring apparatus. The carrying interface having a gas supplying assembly connected to a base of the wafer carrier so as to supply gas to the wafer carrier. The internal of the inspection space disposed a measuring assembly which is mainly used to measure gas flow rate from the gas tower in the accommodating space. The measuring assembly comprises a plurality of wind speed sensing elements and a plurality of displacement sensing element, which are fitted to the a second connecting element.

A substrate processing apparatus includes a substrate processing unit and a controller. The substrate processing unit is configured to perform an etching processing on one or more substrates each having a silicon nitride film and a silicon oxide film on a surface thereof with a processing liquid containing a phosphoric acid aqueous solution and a silicic acid compound. The controller is configured to control individual components of the substrate processing apparatus. The controller includes a concentration control unit configured to control a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film falls within a given range from a beginning of the etching processing to an end thereof.

A method includes establishing, by a diagnostic disc, a secure wireless connection with a computing system using a wireless communication circuit of the diagnostic disc before or after the diagnostic disc is placed into a processing chamber. The method further includes generating, at a vacuum of about 0.1 mTorr to about 50 mTorr and a temperature of about 20 C. to about 120 C., by at least one non-contact sensor of the diagnostic disc, sensor data of a component disposed within the processing chamber. The method further includes wirelessly transmitting the sensor data to the computing system via the secure wireless connection using the wireless communication circuit. The diagnostic disc includes a disc-shaped body, a printed circuit board (PCB), a power source coupled to the PCB, a casing that encapsulates the power source, and a cover positioned over the PCB and the power source.

Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

A wafer lift pin system is capable of dynamically modulating or adjusting the flow of gas into and out of lift pins of the wafer lift pin system to achieve and maintain a consistent pressure in supply lines that supply the gas to the lift pins. This enables the wafer lift pin system to precisely control the speed, acceleration, and deceleration of the lift pins to achieve consistent and repeatable lift pin rise times and fall times. A controller and various sensors and valves may control the gas pressures in the wafer lift pin system based on various factors, such as historic rise times, historic fall times, and/or the condition of the lift pins. This enables smoother and more controlled automatic operation of the lift pins, which reduces and/or minimizes wafer shifting and wafer instability, which may reduce processing defects and maintain or improve processing yields.

A substrate processing apparatus includes a chamber having a first port and a second port, a stage disposed inside the chamber and configured to support a substrate, a first light emitting system configured to radiate a first incident light through the first port onto the substrate when disposed inside the chamber, a second light emitting system configured to radiate a second incident light through the second port onto an inner surface of a wall of the chamber, and a spectrometer configured to receive a substrate-reflected light reflected from the substrate and a wall-reflected light reflected from the inner surface of the wall of the chamber.

An information processing apparatus including: an acquisition unit that acquires a process log for each execution of the same process including a plurality of process steps in one or more substrate processing apparatuses that execute the process according to a recipe; an analysis unit that compares, based on the process logs, step times taken for the same process step and analyzes a process step having time variation as time-variable step; and a display control unit that displays information related to the time-variable step.

A substrate processing apparatus includes a gas-exhaust path to which a predetermined exhaust force is applied, and a plurality of substrate processing units configured to share the gas-exhaust path. Group correlations are predetermined as correlations in regard to a plurality of processing information pieces which correspond to each of the plurality of substrate processing units and represent work or a state relating to supply and exhaust of gas, and a management device that manages the substrate processing apparatus acquires a plurality of processing information pieces corresponding to each of the plurality of substrate processing units, and detects a state prior to a state in which the plurality of substrate processing apparatuses become abnormal, based on comparison information obtained when correlations in regard to a plurality of processing information pieces relating to exhaust of gas among a plurality of processing information pieces are compared with the group correlations.

An information processing apparatus performs a performance evaluation of a recipe of a substrate processing apparatus performing a film formation processing based on the recipe. The information processing apparatus includes: a prediction unit that predicts a film formation result of the substrate processing apparatus performing the film formation processing based on the recipe; a recipe performance evaluation unit that performs the performance evaluation of the recipe for each evaluation item based on the predicted film formation result of the substrate processing apparatus; and a display control unit that displays the performance evaluation of the recipe for each evaluation item.

There is provided a technique that includes (a) receiving a recipe for measuring an object to be measured; (b) calculating an estimated time when measuring the object according to a setting order of respective measurement points set in the recipe; (c) changing the setting order of the respective measurement points set in the recipe according to a measurement pattern for measuring the object and calculating an estimated time when measuring the object according to the changed setting order; (d) selecting the setting order in which the estimated time is the shortest among the estimated times calculated in (b) and (c); and (e) measuring the object in the selected setting order.