A laser crystallization monitoring device includes a stage that supports a substrate, a laser beam generator that emits a laser beam to the substrate, a mirror that reflects the laser beam emitted from the laser beam generator and that rotates around a rotation axis, a first telecentric f-theta lens located on the laser beam path between the mirror and the substrate, a second telecentric f-theta lens through which the laser beam reflected from the substrate passes, and a monitor that inspects the laser beam passing through the second telecentric f-theta lens.

There is provided a technique that includes: forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a first supplier to the substrate and exhausting the precursor from an exhaust port installed opposite to the first supplier with the substrate interposed between the exhaust port and the first supplier; and (b) supplying a reactant from a second supplier to the substrate and exhausting the reactant from the exhaust port, wherein in (a), inert gas is supplied into the process chamber from a third supplier installed at a region, which is a region on a side of the exhaust port among a plurality of regions partitioned in the process chamber by a bisector perpendicular to straight line connecting the first supplier and the exhaust port in a plane view.

A method for aligning to a pattern on a wafer is disclosed. The method includes the steps of obtaining a first inline image from a first sample wafer, obtaining a first contour pattern of an alignment mark pattern from the first inline image, using the first contour pattern to generate a first synthetic image in black and white pixels of only two grayscale levels, using the first synthetic image as a reference to recognize the alignment mark pattern on a tested wafer, and aligning to a tested pattern on the tested wafer according to a position of the alignment mark pattern on the tested wafer and a coordinate information.

An object of the present disclosure is to provide a diagnostic technique capable of determining an anomaly of an exhaust device or an exhaust pipe of a semiconductor manufacturing apparatus while suppressing variations due to processing conditions. In a diagnostic device for diagnosing a state of a semiconductor manufacturing apparatus including: a processing chamber in which a sample is processed; a transfer chamber that is connected to the processing chamber and transfers the sample to the processing chamber; a valve that is disposed between the processing chamber and the transfer chamber; and an exhaust device for exhausting the processing chamber, wherein whether or not there is an anomaly in the exhaust device or an exhaust pipe regarding the exhaust device is determined on the basis of a pressure regarding the exhaust device after the valve is opened.

Vapor delivery apparatus configured for generating a gaseous precursor from solid source precursor particles in a fluidized bed are disclosed. In addition, vapor phase reactors including a vapor delivery apparatus including a fluidized bed of solid precursor are also disclosed. Methods for monitoring and a controlling a vapor delivery system including a fluidized bed also disclosed.

A substrate processing method includes: a holding step of carrying a substrate into an inside of a chamber and holding said substrate; a supply step of supplying a fluid to the substrate on the inside of the chamber; an imaging step of sequentially imaging the inside of the chamber by a camera to acquire image data; a condition setting step of specifying a monitoring target and changing an image condition based on the monitoring target; and a monitoring step of performing a monitoring process on the monitoring target based on the image data having the image condition corresponding to the monitoring target.

A substrate processing method includes: a holding step of carrying a substrate into an inside of a chamber and holding said substrate; a supply step of supplying a fluid to the substrate on the inside of the chamber; an imaging step of sequentially imaging the inside of the chamber by a camera to acquire image data; a condition setting step of specifying a monitoring target and changing an image condition based on the monitoring target; and a monitoring step of performing a monitoring process on the monitoring target based on the image data having the image condition corresponding to the monitoring target.

This disclosure describes systems, methods, and devices for estimating dimple etch recess depth in a gate-all-around transistor. A method may include receiving, by a device, first measurements of the gate-all-around transistor, the first measurements based on first optical data from a spacer etch stage of fabricating the gate-all-around transistor; inputting, by the at least one processor, using a feed forward network, the first measurements to a machine learning model trained to estimate dimple etch recess in the gate-all-around transistor; inputting, by the at least one processor, to the machine learning model, second optical data from a dimple etch stage of fabricating the gate-all-around transistor; and generating, by the at least one processor, using the machine learning model, based on the second optical data and the first measurements, second measurements comprising the first measurements and dimple etch recess estimates for the gate-all-around transistor.

In the method for cleaning a silicon wafer of this disclosure, an oxidizing agent is supplied in the surface layer modification process from a position shifted from the center of the silicon wafer in the radial direction. The method for producing a silicon wafer of this disclosure includes performing the above-mentioned method for cleaning a silicon wafer. When the silicon wafer of this disclosure is subjected to a given measurement, difference between maximum and minimum values of the thickness of the natural oxide film in the radial direction of the silicon wafer, when a thickness of the natural oxide film is normalized to a maximum value, is 0.1 or less.

There is provided a flow control apparatus and a flow control method that may diagnose and compensate for the span error of a mass flow controller to improve the accuracy. The flow control apparatus includes a first valve at an inlet of a fluid conduit, a second valve an outlet end of the fluid conduit, a flow controller which is disposed between the first valve and the second valve, and that includes a pressure sensor and a third valve, and a controller configured to control the first and second valves to be closed and the third valve to be open, sense a rate of decay of the pressure of the fluid using the mass flow controller, and to determine a span error of the flow controller using the rate of decay to derive a compensation value.