A target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate at a process chamber of a manufacturing system is identified. Data of the target concentration profile is processed using a model. The model outputs a set of deposition process settings that corresponds to the target concentration profile. One or more operations of the deposition process are performed in accordance with the set of deposition process settings.

Disclosed herein is an endpoint detection having an optical bundle configured to emit light through a ceiling of a processing chamber. The optical bundle has a plurality of fibers configured to transmit the light from a light source towards a substrate and is configured to receive light reflected from the substrate. The plurality of fibers include a first emitting fiber and a first receiving fiber. The first receiving fiber is radially disposed at a pairing angle from the first emitting fiber, and is configured to receive light emitted from the first emitting fiber. The plurality of fibers further include a second emitting fiber and a second receiving fiber. The second receiving fiber is radially disposed at the pairing angle from the second emitting fiber. The second receiving fiber is configured to receive light originating from the second emitting fiber. The pairing angle is between about 175 degrees and 185 degrees.

A finFET device includes a doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped or p-doped source or drain extension is disposed. The doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer. After formation of the cavity, advanced processing controls (APC) (i.e., integrated metrology) is used to determine the distance of recess, without exposing the substrate to an oxidizing environment. The isotropic etch process, the metrology, and selective epitaxial growth may be performed in the same platform.

Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

A method is provided for etching a silicon carbide accretion from one or more workpieces of a reaction chamber for the deposition of silicon carbide layers on a substrate. The method comprises the steps of: (I) providing a silicon carbide accretion on one or more workpieces of a reaction chamber of a reactor for deposition of silicon carbide; (II) executing at least one cycle of an etching process. Further provided is a reactor adapted to execute the method.

The present invention relates to a substrate processing equipment, and more particularly, to a substrate processing equipment equipped with a current/voltage/power measurement module for measuring the current/voltage applied for generating and maintaining plasma during substrate processing using plasma, and further for measuring the power of incident and reflected waves. The present invention discloses a substrate processing equipment comprising a process chamber forming a sealed processing space in which plasma is formed to perform substrate processing; a substrate support unit disposed in the processing space on which a substrate is seated; and a gas injection unit for injecting a process gas into the processing space, wherein the substrate support unit includes a heater for heating the seated substrate, and a current/voltage/power measurement module for measuring an RF voltage, current, and power of an incident wave and a reflected wave generated by plasma in the processing space is installed adjacent to a heater power line for supplying power to the heater.

A substrate processing apparatus includes a substrate having first points and second points different from the first points, a measurement module configured to measure at least one thickness of the substrate, a substrate processor configured to perform a planarization process on the substrate, and a controller configured to control the substrate processor based on thickness information of the substrate measured by the measurement module. The controller is configured to control the substrate processor to planarize the first points based on first thickness information of the substrate including first thicknesses measured at the first points and to control the substrate processor to planarize the second points based on second thickness information of the substrate including second thicknesses measured at the second points.

A semiconductor wafer mass metrology method comprising: controlling the temperature of a semiconductor wafer by: detecting information relating to the temperature of the semiconductor wafer; and controlling cooling or heating of the semiconductor wafer based on the detected information relating to the temperature of the semiconductor wafer; wherein controlling the cooling or heating of the semiconductor wafer comprises controlling a duration of the cooling or heating of the semiconductor wafer; and subsequently loading the semiconductor wafer onto a measurement area of a semiconductor wafer mass metrology apparatus.

Method for inspection of an inner pod EIP and/or an outer pod EOP of an EUV pod, respectively including a base member and a cover member. The method includes acquiring inspection data sets using a line scan camera and an area scan camera, inspecting the cover member in a first inspection unit using the line scan camera, inspecting the base member in a second inspection unit using the area scan camera, inspecting the cover member in the second inspection unit using the area scan camera, and inspecting the base member in the first inspection unit using the line scan camera.

A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device, is configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the substrate, another substrate bonded before the substrate is bonded, or the substrate bonding device, and the two substrates are bonded to each other by a contact region expanding after the contact region is formed in a center.