The present invention provides a measuring apparatus for measuring a wafer carrier having an opening end and at least one gas tower deposited inside, the measuring apparatus comprising a carrying interface for securing the wafer carrier. The opening end of the wafer carrier faces an inspection space of measuring apparatus. The carrying interface having a gas supplying assembly connected to a base of the wafer carrier so as to supply gas to the wafer carrier. The internal of the inspection space disposed a measuring assembly which is mainly used to measure gas flow rate from the gas tower in the accommodating space. The measuring assembly comprises a plurality of wind speed sensing elements and a plurality of displacement sensing element, which are fitted to the a second connecting element.

A defect detection method includes: acquiring a photoluminescence detection result of a wafer to be detected; generating a defect heat map corresponding to said wafer according to the photoluminescence detection result and a preset heat map model, the preset heat map model being constructed on the basis of a photoluminescence detection result sample after electroluminescent defect marking; and determining a defect detection result of said wafer according to the defect heat map.

A substrate processing system includes a coating apparatus configured to coat a photoresist film on a semiconductor substrate, an exposure apparatus configured to irradiate light onto the photoresist film to form a photoresist pattern region, a developing system configured to remove an unnecessary region from the photoresist film except for the photoresist pattern region to form a photoresist pattern, the developing system including a wet developing apparatus and a dry developing apparatus, the wet developing apparatus configured to remove the unnecessary region using a developing solution, the dry developing apparatus configured to remove the unnecessary region using a developing gas, a cleaning apparatus including a cleaning chamber and configured to remove an edge bead of the photoresist film or the photoresist pattern on an edge region of the semiconductor substrate, and a heating apparatus configured to heat the photoresist film or the photoresist pattern.

A chip transferring method includes steps of: providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion of the plurality of chips and a second portion of the plurality of chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion of the plurality of chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion of the plurality of chips from the first load-bearing structure; dividing the first portion of the plurality of chips into a plurality of blocks, wherein each of the plurality of blocks comprising multiple chips of the first portion of the plurality of chips; and transferring the first portion of the plurality of chips in one of the plurality of blocks to a second load-bearing structure in single-batch.

The invention is to provide a semiconductor manufacturing apparatus system and a semiconductor device manufacturing method for reducing particles having an adverse effect in a manufacturing step of a semiconductor device. A semiconductor device manufacturing system, includes: a semiconductor manufacturing apparatus; and a platform connected to the semiconductor manufacturing apparatus via a network and in which a particle reduction processing is executed, in which the particle reduction processing includes: a step of acquiring a particle characteristic value by using a sample processed by the semiconductor manufacturing apparatus; a step of specifying a component of the semiconductor manufacturing apparatus leading to a particle generation based on the acquired particle characteristic value and correlation data by machine learning; a step of defining a cleaning condition for cleaning the semiconductor manufacturing apparatus based on the specified component; and a step of cleaning the semiconductor manufacturing apparatus using the defined cleaning condition, and the correlation data is correlation data between the particle characteristic value acquired in advance and the component.

A method of manufacturing the same is provided. The method includes providing a substrate. The method also includes forming a target layer over the substrate. The method further includes forming a patterned mask structure over the target layer. In addition, the method includes forming an etching stop layer over the patterned mask structure. The method also includes forming an underlayer over the etching stop layer; and performing an etching process to pattern the target layer.

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

A system and method for automatic optimization of an imaging recipe of an electron beam tool are provided. The method includes obtaining material and structural properties of a semiconductor specimen of interest (SOI); performing a first simulation of the interaction between irradiated electrons of a primary beam and the SOI at various primary beam configurations to obtain maps of escaped electron distribution in terms of polar angle and escape energy; performing, based on the maps, a second simulation of the collection and detection of escaped electrons at different imaging configurations to obtain a signal profile of a measurement of interest (MOI) on the SOI at each imaging configuration; and creating an imaging recipe for the electron beam tool, comprising primary beam parameters and tool imaging parameters configured to achieve optimal contrast of the MOI in the signal profile.

A wafer inspection device for inspecting presence or absence of a defect in a wafer, the wafer inspection device includes: a stage on which the wafer is horizontally floated above an air hole block by exhausting air from the air hole block; a transport unit to transport the wafer; an inspection information acquisition unit; and a detection unit, in which the transport unit includes an abutment unit that abuts against an outer peripheral edge of the wafer horizontally floated above the stage by the air, and a drive unit that moves the abutment unit with respect to the stage, and moves the wafer in the one direction by moving the abutment unit with respect to the stage by the drive unit, and allow the wafer to pass through the inspection information acquisition unit while horizontally floating the wafer.

A substrate processing apparatus includes a chamber, a nozzle, a measurement unit, a flow-path opening/closing unit, and a controller. The chamber is capable of housing therein a substrate. The nozzle is arranged in the chamber to supply processing liquid towards the substrate. The measurement unit projects light to the substrate to measure an intensity of reflected light from the substrate. The flow-path opening/closing unit opens/closes a supply flow path of the processing liquid to the nozzle. The controller is configured to output an opening signal and a closing signal to the flow-path opening/closing unit. The controller is further configured to detect abnormality related to leakage of the processing liquid from the nozzle based on the intensity of reflected light that is measured by the measurement unit after an output of the closing signal.