A processing method including a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a process substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the process substrate; a step that calculates warp amount of the process substrate based on the obtained shape data; a step that forms a resist film on a surface of the process substrate; a step that determines the supply position from which an organic solvent is supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the process substrate.

The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 m below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.

Provided is a wafer treatment apparatus capable of measuring warpage of a wafer, the wafer treatment apparatus including a support plate providing a surface on which the wafer is supported, a temperature control channel mounted in the support plate to provide a path through which a fluid flows, and a plurality of warpage measurers disposed on the support plate and having lower ends mounted to be vertically spaced apart from an upper portion of the temperature control channel.

Methods of hybrid bonding with inspection are provided herein. In some embodiments, a method of hybrid bonding with inspection includes: cleaning a substrate via a first cleaning chamber and a tape frame having a plurality of chiplets via a second cleaning chamber; inspecting, via a first metrology system, the substrate for pre-bond defects in a first metrology chamber and the tape frame for pre-bond defects in a second metrology chamber; bonding one or more of the plurality of chiplets to the substrate via a hybrid bonding process in a bonder chamber to form a bonded substrate; and performing, via a second metrology system different than the first metrology system, a post-bond inspection of the bonded substrate via a third metrology chamber for post-bond defects.

A system for wafer pairing for wafer-to-wafer bonding may include a wafer shape metrology sub-system and controller. The controller may receive the shape measurements for a set of top wafers and bottom wafers and then sort the set of top wafers and the bottom wafers into wafer groups based on the shape measurements. The controller may tag each top and bottom wafer with a wafer group number and determine wafer pairs from selected wafer groups. The controller may calculate the bow difference for each wafer pair of the set of wafer pairs and sort the set of wafer pairs into wafer pair groups based on intervals of bow difference. The controller may associate each wafer pair group with a corresponding reference recipe and direct a bonder to bond the wafer pairs in a selected wafer pair group according to a corresponding reference recipe associated with the selected wafer pair group.

Method for inspection of an inner pod EIP and/or an outer pod EOP of an EUV pod, respectively including a base member and a cover member. The method includes acquiring inspection data sets using a line scan camera and an area scan camera, inspecting the cover member in a first inspection unit using the line scan camera, inspecting the base member in a second inspection unit using the area scan camera, inspecting the cover member in the second inspection unit using the area scan camera, and inspecting the base member in the first inspection unit using the line scan camera.

A method for processing a semiconductor wafer is provided. The method includes transferring the semiconductor wafer above a wafer placement device having a plate to align an edge of the semiconductor wafer with a first buffer member positioned in a peripheral region of the plate and to align a center of the semiconductor wafer with a second buffer member positioned in a central region of the plate. Each of the first buffer member and the second buffer member has a stiffness that is less than that of the plate. The method further includes lowering down the semiconductor wafer to place the semiconductor wafer over the plate.

Described is a semiconductor processing system including a measurement tool configured to measure warpage characteristics in a semiconductor wafer. The semiconductor processing system further includes a pixelated surface configured to retain the semiconductor wafer, where the pixelated surface approximates the warpage characteristics to conform to the semiconductor wafer. The semiconductor processing system further includes a semiconductor processing tool configured to perform processing on the semiconductor wafer while it is retained on the pixelated surface.

A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device, is configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the substrate, another substrate bonded before the substrate is bonded, or the substrate bonding device, and the two substrates are bonded to each other by a contact region expanding after the contact region is formed in a center.

A method of trimming a wafer includes securing the wafer on a top surface of a wafer chuck of a wafer edge trimming apparatus, directing a water jet at an edge of the wafer to form a plurality of cracks at uniform intervals along the edge of the wafer, inserting a wedge of a removal module into a first crack of the plurality of cracks, and rotating the wafer, where during the rotation of the wafer, the wedge expands the first crack of the plurality of cracks and removes material from the edge of the wafer.