The load port includes a FOUP configured to accommodate a plurality of substrates in multiple stages, cameras configured to image each of the substrates accommodated in the FOUP and including a low-magnification camera with a wide horizontal angle of view and a high-magnification camera with a narrow horizontal angle of view, and a CPU configured to detect the accommodation state of each of the substrates based on the imaging data acquired from the low-magnification camera and the high-magnification camera, respectively.

A technique includes: a process chamber configured to process a substrate; a transferor configured to transfer the substrate; a component relating to at least one of the process chamber or the transferor; a memory storing a plurality of operation events; a plurality of areas in each of which at least one of the process chamber, the transferor, or the component is provided; a detector provided in at least one of the plurality of areas and configured to be capable of detecting an operating sound of the component; and a controller is configured to be capable of controlling the component and the detector to select one area of the plurality of areas, which corresponds to each of the plurality of operation events, and to acquire detection data from the detector provided in the selected one area.

A wafer aligner that includes a body, a stage, a stand, an optical module and a control module is provided. The stage is movably disposed on the body. The stand is vertically disposed on the body and partially suspended above the body to allow the stand and the body to form a detection space. A wafer is carried on the stage and driven by the stage to rotate relative to the body, and an edge of the wafer passes by the detection space. At least one surface of the detection space formed by the stand and the body is a light-absorbing surface. The optical module includes a light source and an image capture device. The light source is disposed in the body. The image capture device is disposed in the stand. The control module electrically connects the stage and the optical module.

A substrate processing method according to an aspect of the present disclosure includes performing a batch processing to process a plurality of substrates at once, performing a single-substrate processing to process the plurality of substrate one by one after the batch processing, identifying a position of a cutout provided on an outer periphery of a substrate subjected to the batch processing, and rotating the substrate such that the identified position of the cutout reaches a first position. The performing the single-substrate processing includes drying the substrate, and the rotating the substrate is performed before the drying the substrate.

Disclosed herein are a warpage control method and system for warpage control included in a processing chamber. The warpage control method includes heating a substrate by a heating assembly comprising a plurality of independently controllable heating zones, measuring a backside temperature of a susceptor based on radiation at a first wavelength, measuring a topside temperature of the substrate based on radiation at a second wavelength, measuring a curvature of the substrate based on radiation at a third wavelength, and controlling the heating assembly based on the backside temperature, the topside temperature, and the curvature. The warpage control system includes a first thermal sensor and an warp sensor disposed above a substrate, a second thermal sensor disposed below the substrate, a heating assembly, and a controller coupled with the heating assembly, the first thermal sensor, the second thermal sensor, and the warp sensor for controlling the warpage of the substrate.

The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

A method for processing semiconductor wafers includes providing a first semiconductor wafer processed by a front-end process tool and obtaining measurement data along a surface of the first semiconductor wafer. The method also includes calculating a Gapi value of the first semiconductor wafer based on based on the measurement data, where the Gapi value is a global metric representing a difference between a raw shape of the first semiconductor wafer and an ideal shape of the semiconductor wafer. The method also includes determining whether the Gapi value of the first semiconductor wafer is within a predetermined threshold and either tuning the front-end process tool and processing a second semiconductor wafer with the tuned front-end process tool when the Gapi value is determined to be outside of the predetermined threshold, or sorting the first semiconductor wafer for polishing when the Gapi value is determined to be within the predetermined threshold.

An electroplating chamber leakage plating warning method and system are disclosed. The method includes: positioning the electroplated wafer (100) at a detection location (S100); setting a target detection area (S200) of the wafer (100); operating an image sensor (400) to detect the target detection area (S300) of the wafer (100), and determining whether there is unwanted metal deposition in the target detection area of the wafer (100) (S400); if the determination result indicates the presence of unwanted metal deposition in the target detection area of the wafer (100), indicating a leakage plating occurrence in the electroplating chamber processing the wafer (100), then an alarm command is issued; if the determination result indicates that there is no unwanted metal deposition in the target detection area of the wafer (100), indicating no leakage plating occurrence in the electroplating chamber processing the wafer (100), then no alarm command is issued. By using a detection device to automatically perform leakage plating detection on the wafer (100), it can replace manual inspection of the electroplating conditions of the wafer (100), promptly detect leakage plating issues on the wafer (100), and issue an alarm, facilitating the handling of the electroplating chamber by the staff.

An abnormality detection device for detecting a treatment abnormality in a semiconductor wafer to be heat-treated in a heat treatment apparatus is provided. The abnormality detection device includes a lower radiation thermometer for measuring a temperature of the semiconductor wafer being heat-treated, a treatment information acquisition part (sensors) for acquiring a plurality of pieces of treatment information having a correlation with the temperature measured by the lower radiation thermometer, and a detection part for dividing heat treatment of the semiconductor wafer into a plurality of phases (heat treatment phases F1 to F7) to detect a treatment abnormality in the semiconductor wafer, based on a plurality of learning models created for the respective phases (heat treatment phases F1 to F7), based on the temperature and the treatment information.

Disclosed systems and techniques are directed to improving chucking of substrates using stress-compensation beams with multiscale irradiation doses. The techniques include decomposing a profile of a deformation of a substrate into a plurality of harmonics, and identifying, using chuckability reference data, one or more harmonics of the plurality of harmonics having an amplitude above a maximum amplitude capable of being flattened by a predetermined clamping pressure exerted on the substrate by a chuck. The techniques further include determining, based at least on a subset of the one or more harmonics, settings of a stress-modulation beam, forming a stress-compensation layer (SCL) on the substrate causing a modification of the deformation of the substrate, and irradiating the SCL with the stress-modulation beam, wherein the stress-modulation beam causes a reduction of the deformation of the substrate.