A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on an upper surface, an electrostatic electrode embedded in the ceramic plate, an electrode lead-out portion embedded in the ceramic plate and extending downward from the electrostatic electrode, a terminal hole extending from a lower surface of the ceramic plate to the electrode lead-out portion, a terminal in the terminal hole, a conductive bonding portion located between the terminal and the electrode lead-out portion and bonding the terminal and the electrode lead-out portion together. The terminal hole has a terminal hole tapering surface that tapers toward a bottom of the hole, and the terminal hole tapering surface intersects a lateral surface of the electrode lead-out portion.

A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; and a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3), a porosity at an interface between the pair of ceramic plates (2, 3) and the insulating layer (5) is 4% or less, and a ratio of an average primary particle diameter of an insulating material which forms the insulating layer (5) to an average primary particle diameter of an insulating material which forms the ceramic plates (2, 3) is more than 1.

An electrostatic chuck control system configured to be utilized during an inspection process of a wafer, the electrostatic chuck control system comprising an electrostatic chuck of a stage configured to be undocked during the inspection process, wherein the electrostatic chuck comprises a plurality of components configured to influence an interaction between the wafer and the electrostatic chuck during the inspection process, a first sensor configured to generate measurement data between at least some of the plurality of components and the wafer, and a controller including circuitry configured to receive the measurement data to determine characteristics of the wafer relative to the electrostatic chuck and to generate adjustment data to enable adjusting, while the stage is undocked, at least some of the plurality of components based on the determined characteristics.

Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation. In some embodiments, the plasma processing methods include the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.

An electrostatic chuck (ESC) pedestal heater that includes a pedestal body and a surface on the pedestal body for receiving a substrate such as a high bow wafer. An electrode is embedded in the pedestal body to selectively generate an electrostatic force. The ESC pedestal heater includes a substrate contact surface that is raised to a height above the surface on the pedestal body and includes an inner seal band, an intermediate seal band, and an outer seal band extending. In the substrate contact surface, main spokes are provided that extend outward from the inner seal band to the outer seal band, and ancillary spokes may be provided between the main spokes in the region between the intermediate and outer seal bands. Additionally, contact areas or dots are provided in the substrate contact surface in the spaces between the bands and spokes.

A substrate processing apparatus includes an electrostatic chuck that supports a substrate, a detachment device that releases the substrate that is supported by the electrostatic chuck, from the electrostatic chuck, and a control device that determines a load on the detachment device and applies a release voltage to the electrostatic chuck, based on the load.

A joined body includes a first member, a second member, and a joining portion disposed therebetween and joining the first member and the second member. The joining portion includes a first joining layer on a side toward the first member and formed of a first joining material, a second joining layer on a side toward the second member and formed of a second joining material, and a metal layer therebetween and having a plurality of holes communicating with one another. The metal layer includes a first-joining-material-impregnated layer on a side toward the first joining layer and in which the plurality of holes are impregnated with the first joining material, a second-joining-material-impregnated layer on a side toward the second joining layer and in which the plurality of holes are impregnated with the second joining material, and an unfilled hole layer therebetween and in which the plurality of holes are void.

A wafer placement table includes a ceramic plate, a cooling plate and a refrigerant flow path. The refrigerant flow path has a first variable section and a second variable section. The first variable section is provided such that the cross-sectional area of the refrigerant flow path gradually decreases as it proceeds in the direction of refrigerant flow from a starting point of the first variable section. The second variable section is provided such that, after the cross-sectional area of the refrigerant flow path is once expanded from the cross-sectional area of the refrigerant flow path at an end point of the first variable section in a first expansion section right before a starting point of the second variable section, the cross-sectional area of the refrigerant flow path gradually decreases as it proceeds in the direction of refrigerant flow from the starting point of the second variable section.

A substrate fixing device includes: a base plate; an electrostatic adsorption member that adsorbs and holds a substrate; and a first adhesive layer that adhesively bonds the electrostatic adsorption member to the base plate. A storage modulus of the first adhesive layer is not less than 0.01 MPa and not more than 25 MPa within a temperature range of 110 C. to 250 C.

The present disclosure relates to a method and apparatus for controlling a plasma sheath near a substrate edge. Changing the voltage/current distribution across the inner electrode and the outer electrode with in the substrate assembly facilitates the spatial distribution of the plasma across the substrate. The method includes providing a first radio frequency power to a central electrode embedded in a substrate support assembly, providing a second radio frequency power to an annular electrode embedded in the substrate support assembly at a location different than the central electrode, wherein the annular electrode circumferentially surrounds the central electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.