An apparatus includes a processing chamber, a substrate support in the processing chamber, a plasma source coupled to the processing chamber, and a plurality of heating devices arranged on the processing chamber. Each heating device is configured to emit laser beam on a substrate positioned on the substrate support to heat the substrate.

A plasma processing apparatus includes an ESC system having an ESC electrode, a plasma generator generating first and second plasma, a controller controlling the ESC system and the plasma generator such that a first or second processing with the first or second processing is performed on a substrate chucked to a stage, and an abnormality detector detecting abnormality, based on a plurality of parameters. The abnormality detector performs an abnormality detection during predetermined period DT immediately after switching between the first processing and the second processing, based on a first parameter including a monitoring information related to voltage V and/or current I applied to the ESC electrode and does not include a monitoring information related to pressure PR within a chamber, and performs an abnormality detection during a predetermined period outside predetermined period DT, based on a second parameter including the monitoring information related to pressure PR within the chamber.

A substrate processing apparatus including a temperature sensor according to the present disclosure includes a substrate holder which fixes a substrate by an electrostatic force and a body unit which is disposed below the substrate holder and includes a thermal conductivity adjustment channel which adjusts a thermal conductivity based on a pressure formed by a thermal conductivity adjustment gas. A fiber Bragg grating (FBG) temperature is installed in the substrate holder and the FBG temperature sensor is installed in a hollow formed in the substrate holder.

Electrostatic chucks and methods of forming electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a device embedded within the ceramic body, and an interface layer formed overlying the device. Exemplary methods include providing ceramic precursor material within a mold, providing a device, coating the device with an interface material to form a coated device, placing the coated device on or within the ceramic precursor material, and sintering the ceramic precursor material to form the electrostatic chuck and an interface layer between the device and ceramic material formed during the step of sintering.

Electrostatic chucks, as described herein, can include at least a first layer, a second layer including an organic material, an encapsulation coating, and a third layer. The second layer is located between the first and third layer such that at least a portion of the second layer is not covered. The encapsulation coating covers at least the portion of the second layer that is not covered. The encapsulation coating can be formed by atomic layer deposition or by chemical vapor deposition such that it encapsulates at least the uncovered portion of the second layer.

A ceramic joined body includes: a pair of ceramic plates; and an electrode layer that is interposed between the pair of ceramic plates, in which the electrode layer is embedded in at least one of the pair of ceramic plates, and in an outer edge of the electrode layer, a joint surface between the at least one of the pair of ceramic plates and the electrode layer has an inclination with respect to a thickness direction of the pair of ceramic plates and the electrode layer.

The systems and methods discussed herein are associated with substrate support pedestals used in processing chambers to manufacture semiconductors, electronics, optics, and other devices. The substrate support pedestals include an electrostatic chuck body bonded to a cooling base via a bond layer. A gas flow passage is formed between a top surface of the electrostatic chuck body and a bottom surface of the cooling base, and a porous plug is positioned in the gas flow passage. The gas flow passage passes through a hole in the bond layer and the porous plug and has a swept volume physically shielded from an inside edge of the hole in the bond layer, protecting the bond layer from erosion.

A substrate support assembly includes a first puck plate including one or more first functional elements, and a dielectric cooling plate is bonded to the first puck plate. The dielectric cooling plate includes one or more first channels for a coolant to flow therethrough, and one or more second channels for a gas to flow therethrough.

The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.

Embodiments relate to an electrode structure of a transfer roller part of a semiconductor light emitting device and an intelligent assembly-transfer integration device including the same. Electrode structure of transfer roller part of semiconductor light emitting device according to an embodiment can include a roller rotating part, an assembly substrate mounted on the roller rotating part, an adhesive film disposed between the roller rotating part and the assembly substrate, penetration electrodes penetrating the assembly substrate and roller pad electrodes disposed on the roller rotating part and electrically connected to the penetration electrodes.