A ceramic substrate includes a base body, and an electrical conductor pattern embedded in the base body. The base body is composed of ceramics. The electrical conductor pattern has, as a main component, a solid solution having a body-centered cubic lattice structure in which copper is solid-dissolved in tungsten.

A plasma-resistant member includes a lower layer disposed on a substrate and including yttrium oxide, a buffer layer disposed on the lower layer, and an upper layer disposed on the buffer layer and including yttrium oxyfluoride or fluorine-rich yttrium oxide, wherein the buffer layer has a thermal expansion coefficient between a thermal expansion coefficient of the upper layer and a thermal expansion coefficient of the lower layer.

An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

An electrostatic chuck member includes: a base body wherein one main surface thereof is a placement surface on which a plate-shaped sample is placed; and an electrostatic adsorption electrode provided on a side opposite to the placement surface or in the base body, in which a side peripheral surface that is continuous to the placement surface in the base body includes at least a first curved surface that is a convex surface and is provided in a circumferential direction in a peripheral portion of the placement surface and a second curved surface that is provided in the circumferential direction at a different height position from the first curved surface.

Embodiments disclosed herein include an apparatus that includes an electrostatic chuck (ESC). The electrostatic chuck may include a first body that is electrically conductive, and a ceramic insert on the first body with an electrode embedded within the ceramic insert. In an embodiment, the apparatus may further include a facility plate that is coupled to the ESC. The facility plate may include a second body that is electrically conductive with a hole through the second body. In an embodiment, a DC input connector is provided through the hole, and an RF feed line is coupled to the second body. In an embodiment, a pin of the DC input connector is electrically isolated from the RF feed line.

A retention substrate includes: a plate-shaped member having a first surface and a second surface and containing a ceramic material as a main component, the first surface for retaining an object, the second surface disposed opposite to the first surface; a gas channel formed in the plate-shaped member; and a gas-permeable porous body filling part of the gas channel and containing a ceramic material as a main component. The gas channel including a vertical channel section and a horizontal channel section. The vertical channel section having a gas outlet opening in the first surface and extending from the gas outlet toward the second surface. The horizontal channel section connected to the vertical channel section and extending parallel to the first surface. The porous body filling the vertical channel section and forming a space adjacent to the second surface and inside the horizontal channel section.

Disclosed are a heat dissipation material that enables temperature to be uniformly distributed over the entire area of a substrate, a method of manufacturing the heat dissipation material, and an electrostatic chuck with the heat dissipation material applied thereto. The method of manufacturing the heat dissipation material provided to an electrostatic chuck supporting a substrate in a substrate processing apparatus using plasma includes forming a first particle dispersion treated to charge the surface of isotropic particles with a first electric potential, forming a second particle dispersion treated to charge the surface of anisotropic particles with a second electric potential different from the first electric potential, and forming hybrid particles including the isotropic particles and the anisotropic particles bound by electrostatic force by mixing the first particle dispersion and the second particle dispersion.

A system, including a ceramic base and a resistive heating trace embedded in the ceramic base. The resistive heating trace includes a plurality of elongated parallel trace segments, where each trace segment extends across a major surface of the ceramic base. The resistive heating trace further includes a first terminal coupled to a first elongated parallel trace segment of the plurality of elongated parallel trace segments and disposed a first radial distance from a center of the ceramic base. The resistive heating trace further includes a second terminal coupled to a second elongated parallel trace segment of the plurality of elongated parallel trace segments and disposed a second radial distance from the center of the ceramic base.

Synchronization of electrostatic chuck (ESC) voltage with bias power pulses. In one aspect, an apparatus includes an interface configured to receive a synchronization signal indicating a change of power level of pulses output to a plasma chamber, and a controller configured to direct an electrostatic chuck (ESC) power supply to adjust a voltage level of a clamping voltage based on the synchronization signal.

A member for a semiconductor manufacturing apparatus includes a disk-shaped or annular ceramic heater, a metal base, an adhesive element bonding the metal base and the ceramic heater, an adhesive protective element disposed between the ceramic heater and the metal base to extend along a periphery of the adhesive element, and an anti-adhesion layer disposed between the adhesive element and the protective element, the anti-adhesion layer preventing adhesion between the adhesive element and the protective element.