A chuck assembly includes a chuck base including a lower base and an upper base that is on the lower base, a ceramic plate on the upper base, an isolator ring enclosing an outer sidewall of the lower base, a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base, and a pad that is between the edge portion of the lower base and the focus ring. The pad may contain a nonmetal conductive material.

An electrostatic chuck 10 includes a dielectric substrate 100, a base plate 200 which supports the dielectric substrate 100, and a joining layer 300 which joins the dielectric substrate 100 and the base plate 200. A value of a dielectric tangent of the joining layer 300 when a temperature of the joining layer 300 is 20 C. is set as a reference value. In the electrostatic chuck 10, when the temperature of the joining layer 300 has changed from 20 C. to 60 C., a range in which the value of the dielectric tangent of the joining layer 300 fluctuates falls within a range from 50% to 200% of the reference value.

Provided are a mask stage, a deposition apparatus including the mask stage, and an electronic device manufactured by using the deposition apparatus. The mask stage includes a lattice support which supports a deposition mask and comprises a plurality of opening regions and at least one chuck mount region, a first electrostatic chuck which surrounds the lattice support, supports an edge region of the deposition mask, and holds the edge region of the deposition mask using a first electrostatic force, and at least one second electrostatic chuck which is disposed on the at least one chuck mount region, supports a portion of the deposition mask, and holds the portion of the deposition mask using a second electrostatic force.

A system includes an electrostatic chuck. The electrostatic chuck includes a ceramic puck configured to support a substrate. The electrostatic chuck further includes a clamping electrode disposed within the ceramic puck and configured to electrostatically clamp the substrate to the ceramic puck responsive to being energized with a clamping voltage. The electrostatic chuck further includes one or more sensor electrodes disposed within the ceramic puck. The system further includes one or more electronic circuits coupled with the one or more sensor electrodes. The system further includes a processing device. The processing device is configured to receive, from the one or more electronic circuits, a signal indicative of substrate deformation. The processing device is further configured to adjust the clamping voltage based on the signal.

A member for a semiconductor manufacturing apparatus includes a ceramic base material and a conductor. The conductor is arranged in the ceramic base material. The ceramic base material contains a ceramic material having a thermal expansion coefficient of from 2.010.sup.6/ C. to 10.010.sup.6/ C. and spinel. The conductor includes a surface layer containing spinel and a skeleton positioned inside the surface layer.

An electrostatic chuck assembly includes a puck and a cooling plate. The puck includes an electrically insulative upper puck plate comprising one or more heating elements and one or more electrodes to electrostatically secure a substrate and further includes a lower puck plate bonded to the upper puck plate by a metal bond, the lower puck plate comprising a plurality of features distributed over a bottom side of the lower puck plate at a plurality of different distances from a center of the lower puck plate, wherein each of the plurality of features accommodates one of a plurality of fasteners. The cooling plate is coupled to the puck by the plurality of fasteners, wherein the plurality of fasteners each apply an approximately equal fastening force to couple the cooling plate to the puck.

An electrode-embedded member includes a disc-shaped base that is formed of a ceramic sintered body, an electrode embedded in the base, and a plurality of pin-shaped projections projecting upward from an upper surface of the base. The upper surface of the base is a curved surface having a shape protruding toward a center. The plurality of pin-shaped projections include first pin-shaped projections whose heights from the upper surface to respective upper ends are substantially identical to each other, and second pin-shaped projections whose heights from the upper surface to respective upper ends are each lower than the height of each of the first pin-shaped projections.

A plasma processing apparatus includes a plasma processing chamber and a substrate support disposed in the plasma processing chamber. The substrate support includes a ceramic member having a substrate supporting surface and a back surface, a chuck electrode layer, a bias electrode layer, a gas diffusion channel horizontally extending in the ceramic member and having a main path and branch paths branched from the main path, a gas inlet vertically extending from the back surface to the gas diffusion channel in the ceramic member, and gas outlets communicating with the gas diffusion channel. Each gas outlet has a cavity portion horizontally extending from at least one of the branch paths and a porous portion vertically extending from the cavity portion to the substrate supporting surface and filled with a ceramic porous material.

An electronic device manufacturing system including a substrate-holder configured to secure a substrate during processing and a controller, operatively coupled to the substrate-holder. The controller is configured to apply, to an electrode of the substrate-holder, a first voltage. The controller is further configured to determine a first impedance value between the substrate-holder and the substrate. The controller is further configured to determine a delta value between the first impedance value and a predetermined second impedance value, and determine whether the delta value satisfies a threshold criterion. Responsive to the delta value failing to satisfy the threshold criterion, the controller is further configured to apply a second voltage to the substrate, wherein the second voltage is greater than the first voltage.

A chuck that supports a sample in a processing chamber and comprises: a support plate formed from a dielectric material, the support plate including an upper planar support surface sized and shaped to retain a substrate disposed on the support plate; one or more electrodes disposed within the support plate proximate the upper planar support surface; a plurality of lift pin holes formed completely through the support plate; a plurality of stub cavities formed within the support plate, each stub cavity having an opening at the upper planar support surface; a plurality of retractable stubs corresponding in number to the plurality of stub cavities, wherein each retractable stub is disposed in a unique one of the stub cavities; and a stub lift mechanism operable to move each retractable stub in the plurality of stubs between a down position and an up position, wherein in the down position a distal end of the retractable stub is disposed within its respective stub cavity and recessed below the upper planar support surface and the up position the distal end of the retractable stub protrudes above the upper planar support surface through the stub cavity opening.