Disclosed systems and techniques are directed to improving chucking of substrates in device manufacturing systems. The techniques include identifying deformation of a substrate and applying, based on the identified deformation, a plurality of time-dependent voltage signals to a multizonal chuck to attract the substrate to the multizonal chuck. Each voltage signal of the plurality of time-dependent voltage signals is applied to one or more electrodes of the multizonal chuck. The techniques further include performing one or more processing operations in association with the substrate attracted to the multizonal chuck.

A method for a semiconductor reaction chamber includes monitoring a first pressure in an inner chamber, monitoring a second pressure in an accommodation chamber, and in response to detection of a pressure difference between the first pressure and the second pressure greater than a threshold value, balancing the first pressure and the second pressure. The inner chamber is arranged for processing a workpiece. An electrostatic chuck is disposed in the inner chamber for placing the workpiece and includes a functional layer and a base body. The functional layer is fixed on the base body. The accommodation chamber is arranged under the functional layer and enclosed by the functional layer and the base body. A functional wire is disposed in the accommodation chamber and connected with the functional layer. The accommodation chamber is isolated from the inner chamber.

An electrostatic chuck assembly includes a puck and a cooling plate. The puck includes an electrically insulative upper puck plate comprising one or more heating elements and one or more electrodes to electrostatically secure a substrate and further includes a lower puck plate bonded to the upper puck plate by a metal bond, the lower puck plate comprising a plurality of features distributed over a bottom side of the lower puck plate at a plurality of different distances from a center of the lower puck plate, wherein each of the plurality of features accommodates one of a plurality of fasteners. The cooling plate is coupled to the puck by the plurality of fasteners, wherein the plurality of fasteners each apply an approximately equal fastening force to couple the cooling plate to the puck.

A substrate fixing device includes a base plate having a first surface in which a plurality of first bottomed holes are formed, an electrostatic chuck mounted on the first surface of the base plate and having a second surface facing the first surface, the second surface being formed therein with a plurality of second bottomed holes each connected to each of the first bottomed holes, and a plurality of fixing members each fit into one first bottomed hole and one second bottomed hole.

An electrostatic chuck device comprising: a plate-shaped electrostatic chuck part which has an electrostatic adsorption electrode provided therein and has a mounting surface on which a plate-shaped sample is mounted; and a base part which supports the electrostatic chuck part on a support surface thereof from an opposite side of the mounting surface, wherein the base part has a disk shape which has a central axis at a center thereof, and a coolant channel extending along the support surface is provided inside the base part, wherein the coolant channel includes an outer peripheral channel which overlaps an outer edge of the plate-shaped sample when viewed from an axial direction of the central axis, and an inner peripheral channel which is disposed on an inner side in a radical direction than the outer peripheral channel, wherein at least a portion of the inner peripheral channel extends spirally around the central axis, and a channel cross-sectional area of the inner peripheral channel decreases as a distance from the central axis increases.

A cooling plate according to the present invention contains 42% to 65% by mass of TiSi.sub.2, 4% to 16% by mass of TiC, and a smaller amount of SiC than the mass percentage of TiSi.sub.2.

Plasma processing apparatuses, substrate bonding systems, and substrate bonding methods are provided. The plasma processing apparatus includes a plasma process chamber that includes a process space, a load-lock chamber connected to the process space, a first vacuum pump that adjusts a pressure of the load-lock chamber, a process gas supply that supplies the process space with a process gas, and an H.sub.2O supply that supplies the process space with H.sub.2O. The plasma process chamber includes a chuck that supports a substrate and a plasma electrode to which a radio-frequency (RF) power is applied.

Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

Disclosed is a deposition apparatus including a first electrostatic chuck configured to suction a support plate defining a pass hole, the first electrostatic chuck including a base part, and a suction part on the base part, the suction part defining a first recess for overlapping the pass hole, and second recesses spaced apart from the first recess, and having diameters that are less than a diameter of the first recess.

Substrate support assemblies may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. Assemblies may include a support stem coupled with the electrostatic chuck body. Assemblies may include a first bipolar electrode embedded within the electrostatic chuck body. Assemblies may include a second bipolar electrode embedded within the electrostatic chuck body radially inward of at least a portion of the first bipolar electrode and coaxial with the first bipolar electrode. Assemblies may include an annular electrode disposed about the first bipolar electrode, where the annular electrode is DC floated and RF powered and exhibits an induced DC current.