SEMICONDUCTOR REACTION CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS AND METHODS

Abstract

A method for a semiconductor reaction chamber includes monitoring a first pressure in an inner chamber, monitoring a second pressure in an accommodation chamber, and in response to detection of a pressure difference between the first pressure and the second pressure greater than a threshold value, balancing the first pressure and the second pressure. The inner chamber is arranged for processing a workpiece. An electrostatic chuck is disposed in the inner chamber for placing the workpiece and includes a functional layer and a base body. The functional layer is fixed on the base body. The accommodation chamber is arranged under the functional layer and enclosed by the functional layer and the base body. A functional wire is disposed in the accommodation chamber and connected with the functional layer. The accommodation chamber is isolated from the inner chamber.

Claims

1. A method for a semiconductor reaction chamber including an inner chamber and an accommodation chamber, comprising: monitoring a first pressure in the inner chamber, wherein the inner chamber is arranged for processing a workpiece, an electrostatic chuck is disposed in the inner chamber for placing the workpiece and includes a functional layer and a base body, and the functional layer is fixed on the base body; monitoring a second pressure in the accommodation chamber, wherein the accommodation chamber is arranged under the functional layer and enclosed by the functional layer and the base body, a functional wire is disposed in the accommodation chamber and connected with the functional layer, and the accommodation chamber is isolated from the inner chamber; and in response to detection of a pressure difference between the first pressure and the second pressure greater than a threshold value, balancing the second pressure in the accommodation chamber and the first pressure in the inner chamber.

2. The method according to claim 1, further comprising: in response to detection of a pressure difference between the first pressure and the second pressure greater than the threshold value and the first pressure being higher than the second pressure, increasing the second pressure to reduce the pressure difference by supplying a gas to the accommodation chamber through an air inflation device; or in response to detection of a pressure difference between the first pressure and the second pressure greater than the threshold value and the first pressure being lower than the second pressure, decreasing the second pressure to reduce the pressure difference by extracting a gas from the accommodation chamber through an air extraction device.

3. The method according to claim 1, further comprising: when the semiconductor reaction chamber is in a working state, controlling the inner chamber to remain in a vacuum state and using an air extraction device to extract a gas in the accommodation chamber; and when the semiconductor reaction chamber is in a non-working state, controlling the inner chamber to remain in an atmospheric pressure state and using an air inflation device to inflate the accommodation chamber to cause the accommodation chamber to have atmospheric pressure.

4. The method according to claim 1, further comprising: adjusting the second pressure in the accommodation chamber through adjusting a flow rate of a gas via a flow controller of an air inflation device.

5. The method according to claim 4, further comprising: maintaining an extracting state of an air extraction device when the second pressure in the accommodation chamber is adjusted by the flow controller of the air inflation device.

6. The method according to claim 1, wherein the semiconductor reaction chamber further comprises a chamber controller and the method further comprises: monitoring the first pressure and the second pressure and adjusting the second pressure in the accommodation chamber to reduce the pressure difference automatically by the chamber controller.

7. The method according to claim 1, further comprising: monitoring the first pressure through a first pressure sensor in the inner chamber; and monitoring the second pressure through a second pressure sensor in the accommodation chamber.

8. A semiconductor reaction chamber comprising: an inner chamber for processing a workpiece; an electrostatic chuck including a functional layer and a base body and arranged in the inner chamber for placing the workpiece, the functional layer fixed on the base body; an accommodation chamber under the functional layer and surrounded by the functional layer and the base body, the accommodation chamber isolated from the inner chamber; an air inflation device for supplying a gas to the accommodation chamber; an air extraction device for extracting the gas from the accommodation chamber; and a chamber controller including a processor and a memory for storing computer programs that, when being executed, cause the processor to perform: monitoring a first pressure in the inner chamber; monitoring a second pressure in the accommodation chamber; and in response to detection of a pressure difference between the first pressure and the second pressure greater than a threshold value, adjusting the second pressure in the accommodation chamber to reduce the pressure difference through the air inflation device or the air extraction device.

9. The semiconductor reaction chamber according to claim 8, wherein the processor is further configured to perform: adjusting the second pressure in the accommodation chamber through adjusting a flow rate of the gas via a flow controller of the air inflation device.

10. The semiconductor reaction chamber according to claim 9, wherein the processor is further configured to perform: maintaining an extracting state of the air extraction device when the second pressure in the accommodation chamber is adjusted by the air inflation device.

11. The semiconductor reaction chamber according to claim 8, wherein the processor is further configured to perform: monitoring the first pressure through a first pressure sensor in the inner chamber; and monitoring the second pressure through a second pressure sensor in the accommodation chamber.

12. The semiconductor reaction chamber according to claim 8, wherein the functional layer includes a heating layer for heating the workpiece.

13. The semiconductor reaction chamber according to claim 8, wherein the processor is further configured to perform: in response to the pressure difference exceeding the threshold value, generating an optical or audible alarm signal.

14. The semiconductor reaction chamber according to claim 8, wherein the processor is further configured to perform: in response to the pressure difference exceeding the threshold value and the chamber controller failing to decreasing the pressure difference, generating an optical or audio alarm signal.

15. A method for a semiconductor reaction chamber including an inner chamber and an accommodation chamber, comprising: monitoring a first pressure in the inner chamber, wherein the inner chamber is arranged for processing a workpiece, an electrostatic chuck is disposed in the inner chamber for placing the workpiece and includes a functional layer and a base body, and the functional layer is fixed on the base body; monitoring a second pressure in the accommodation chamber, wherein the accommodation chamber is arranged under the functional layer and surrounded by the functional layer and the base body, and the accommodation chamber is isolated from the inner chamber; supplying a gas from a gas source to the accommodation chamber through an air inflation device; extracting the gas from the accommodation chamber through an air extraction device; and adjusting the second pressure to reduce a pressure difference between the first pressure and the second pressure by adjusting a flow rate of the gas through the air inflation device.

16. The method according to claim 15, further comprising: maintaining an extracting state of the air extraction device when adjusting the flow rate of the gas through the air inflation device.

17. The method according to claim 15, wherein the semiconductor reaction chamber further comprises a chamber controller and the method further comprises: monitoring the first pressure and the second pressure and adjusting the second pressure in the accommodation chamber to reduce the pressure difference automatically by the chamber controller.

18. The method according to claim 15, further comprising: in response to the pressure difference exceeding a threshold value, generating an optical or audio alarm signal.

19. The method of claim 17, further comprising: in response to the pressure difference exceeding a threshold value and the chamber controller failing to decreasing the pressure difference, generating an optical or audio alarm signal.

20. The method according to claim 15, further comprising: in response to the pressure difference exceeding a threshold value, adjusting the second pressure to reduce the pressure difference by adjusting the flow rate of the gas through the air inflation device.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The accompanying drawings described here are provided to further understand the present disclosure and form a part of the present disclosure. Exemplary embodiments of the present disclosure and description of the exemplary embodiments of the present disclosure are used to describe the present disclosure and do not limit the present disclosure.

[0015] FIG. 1 illustrates a schematic cross-sectional diagram of a semiconductor reaction chamber according to some embodiments of the present disclosure.

[0016] FIG. 2 illustrates a schematic local cross-sectional diagram of a semiconductor reaction chamber according to some embodiments of the present disclosure.

[0017] FIG. 3 illustrates a schematic structural diagram of an electrostatic chuck of a semiconductor reaction chamber according to some embodiments of the present disclosure.

[0018] FIG. 4 illustrates a schematic structural diagram of FIG. 3 in another view angle.

[0019] FIG. 5 illustrates a schematic cross-sectional diagram of a connection flange of a semiconductor reaction chamber according to some embodiments of the present disclosure.

[0020] FIG. 6 illustrates a schematic local cross-sectional diagram of another semiconductor reaction chamber according to some embodiments of the present disclosure.

REFERENCE NUMERALS

[0021] 100Chamber body 110Inner chamber 120Nozzle [0022] 200Electrostatic chuck 210Base body 211Connection wire channel [0023] 220Ceramic layer 230Heating layer 231Second via [0024] 300Functional wire [0025] 400Air extraction device 410Air extraction mechanism 420First pipeline [0026] 421First switch valve 430Pressure detection device 450Connection pipeline [0027] 500Air inflation device 510Air inflation mechanism 511Gas source [0028] 512Flow controller 520Second pipeline 521Second switch valve [0029] 600Mounting member 610Mounting hole 630Annular groove [0030] 700Connection flange 710Air channel 720Body member [0031] 730Connection member 731First via 740Wire hole [0032] 810First apparatus 820Second apparatus [0033] 900Electrode shell body 910Chamber controller

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0034] In order to make the objectives, technical solutions, and advantages of the present disclosure clearer, the technical solutions of the present disclosure are described in detail below with reference to specific embodiments of the present disclosure and corresponding drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. Apparently, described embodiments are only some embodiments of the present disclosure, but not all embodiments of the present disclosure. Based on embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall be within the scope of the present disclosure.

[0035] The technical solutions of embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0036] As shown in FIGS. 1 to 5, embodiments of the present disclosure provide a semiconductor reaction chamber. The semiconductor reaction chamber is applied to a semiconductor processing apparatus. The semiconductor reaction chamber includes a chamber body 100, an electrostatic chuck 200, a functional wire 300, and a pressure adjustment device (not shown).

[0037] The chamber body 100 encloses an inner chamber 110. A wafer can be processed in the inner chamber 110. In some embodiments, as shown in FIG. 1, a top of the chamber body 100 includes a nozzle 120 that communicates with the inner chamber 110. Process gas can be introduced into the inner chamber 110 through the nozzle 120. The process gas can physically chemically react with the wafer in the inner chamber 110 to complete the processing of the wafer.

[0038] As shown in FIG. 1, the electrostatic chuck 200 is located in the inner chamber 110 and is configured to support and fix the wafer. In some embodiments, the electrostatic chuck 200 can be configured to fix the wafer in an electrostatic adsorption manner. In some embodiments, a lower electrode shell body 900 is arranged below the electrostatic chuck 200. The lower electrode shell body 900 can be configured to support the electrostatic chuck 200 and provide an installation base for the functional wire 300 and other members.

[0039] As shown in FIG. 2, the electrostatic chuck 200 includes a base body 210 and a functional layer arranged on the base body 210. The base body 210 can be configured to provide a mounting position for the functional layer. In some embodiments, the base body 210 and the functional layer can be fixed by adhesion. For example, the base body 210 and the functional layer can be bonded by an adhesive such as super glue or hot melt adhesive. A connection wire channel 211 is formed in the base body 210. The functional layer can cover the end opening of the connection wire channel 211 and enclose the connection wire channel 211 with the base body 210 to form an accommodation chamber. The functional wire 300 can pass through the connection wire channel 211 and be in contact with a part of the functional layer exposed at the end opening of the connection wire channel 211. In some embodiments, as shown in FIG. 1 and FIG. 2, an end of the functional wire 300 is located outside of the chamber body 100. The end of the functional wire 300 can be connected to an external apparatus such as a certain controller, a temperature detection device, etc. Another end of the functional wire 300 passes through the connection wire channel 211 and is in contact with the functional layer. Thus, the external apparatus located outside of the chamber body 100 can perform heating and temperature detection on the wafer at the surface of the electrostatic chuck 200 through the functional wire 300. In some embodiments, a plurality of wiring channels 211 can be provided. Thus, different functional wires 300 can pass through different wiring channels 211. Thus, the above operations can be performed simultaneously, and interference can be avoided from each other.

[0040] The pressure adjustment device can communicate with the above accommodating chamber and can be configured to balance the pressure in the accommodation chamber and the pressure in the inner chamber. Thus, the pressure in the accommodation chamber can be equal to the pressure in the inner chamber 110. Thus, the adhesion between the base body 210 and the functional layer can be prevented from being damaged due to the pressure difference between the inner chamber 110 and the accommodation chamber. Further, the connection stability between the base body 210 and the functional layer can be improved to improve service life of the electrostatic chuck 200.

[0041] In some embodiments, the above pressure adjustment device can include an air extraction device 400 and/or an air inflation device 500. Taking the pressure adjustment device including the air extraction device 400 and the air inflation device 500 as an example, as shown in FIG. 2, the air extraction device 400 communicates with the accommodation chamber. The air extraction device 400 can be configured to vacuum the accommodation chamber. In some embodiments, an air outlet of the air extraction device 400 can be sealed and connected to an opening of the accommodation chamber. Thus, the air extraction device 400 can extract at least a part of the air in the accommodation chamber. Thus, the pressure in the accommodation chamber can be equal to the pressure in the inner chamber 110. During an etching process of the wafer, the inner chamber 110 can be usually in a vacuum state. Thus, the air extraction device 400 can be controlled to start to extract the air in the accommodation chamber. Thus, the accommodation chamber can be also in the vacuum state.

[0042] The air inflation device 500 can be in communication with the accommodation chamber. The air inflation device 500 can be configured to inflate the accommodation chamber. In some embodiments, an air outlet of the air inflation device 500 can be sealed and connected to the opening of the accommodation chamber. Thus, when the semiconductor reaction chamber is in a non-working state, the inner chamber 110 can be usually in the atmospheric pressure state. Then, the air inflation device 500 can be controlled to start to inflate the accommodation chamber to cause the accommodation chamber to be also in the atmospheric pressure state. Thus, the pressure in the accommodation chamber can be equal to the pressure of the inner chamber 110.

[0043] In the semiconductor reaction chamber of embodiments of the present disclosure, at least a part of the air in the accommodation chamber can be drawn out by the air extraction device 400, or air can be introduced into the accommodation chamber through the air inflation device 500. Thus, the pressure in the accommodation chamber can be equal to the pressure in the inner chamber 110. The adhesion between the base body 210 and the functional layer can be prevented from being damaged due to the pressure difference between the inner chamber 110 and the accommodation chamber. Further, the connection stability between the base body 210 and the functional layer can be improved. The service life of the electrostatic chuck can be improved.

[0044] In some embodiments, the pressure in the accommodation chamber can be always equal to the pressure in the inner chamber 110 through the cooperation between the air extraction device 400 and the air inflation device 500. Thus, the force can be prevented from acting on the members in the electrostatic chuck 200 due to the pressure difference between the inner chamber 110 and the accommodation chamber. Thus, the installation stability between members in the electrostatic chuck 200 can be further improved to improve the service life of the electrostatic chuck 200. In practical applications, the air extraction device 400 or the air inflation device 500 can also be provided independently as needed.

[0045] Further, when a plurality of wiring channels 211 are provided, one air extraction device 400 can communicate with a plurality of accommodation chambers. Thus, air in the plurality of accommodation chambers can be extracted through the air extraction device 400 to improve the utilization rate of the air extraction device 400. Similarly, one air inflation device 500 can communicate with the plurality of accommodation chambers. Thus, the air inflation device 500 can inflate the plurality of accommodation chambers to improve the utilization rate of the air inflation device 500.

[0046] In embodiments of the present disclosure, as shown in FIG. 2, the air extraction device 400 includes an air extraction mechanism 410 and a first pipeline 420. The air extraction mechanism 410 can include a vacuum pump or a fan. The air extraction mechanism 410 can be arranged outside the inner chamber 110. The air extraction mechanism 410 can communicate with the accommodation chamber through the first pipeline 420. Thus, the first pipeline 420 can be configured to communicate the air extraction mechanism 410 with the accommodation chamber. In some embodiments, a first end of the first pipeline 420 can be located outside the inner chamber 110 and connected to an air outlet of the air extraction mechanism 410. A second end of the first pipeline 420 can extend into the inner chamber 110 and communicate with the opening of the accommodation chamber. In order to ensure airtightness, the first end of the first pipeline 420 can be sealed and connected to the air outlet of the air extraction mechanism 410, and the second end of the first pipeline 420 can be sealed and connected to the opening of the accommodation chamber to prevent air leak from affecting an air extraction effect of the air extraction mechanism 410. In some embodiments, a sealant can be provided between the first end of the first pipeline 420 and the air outlet of the air extraction mechanism 410 and between the second end of the first pipeline 420 and the opening of the accommodation chamber to achieve a better sealing effect. Thus, the air extraction mechanism 410 can have a better air extraction effect on the accommodation chamber.

[0047] In addition, the first pipeline 420 can also cause the air extraction mechanism 410 to have a better installation flexibility. In some embodiments, through the extension effect of the first pipeline 420, the air extraction mechanism 410 can be mounted at a plurality of positions outside the chamber body 100. In some embodiments, the first pipeline 420 can be a flexible pipe. Thus, the installation flexibility of the air extraction mechanism 410 can be better improved.

[0048] Further, a first switch valve 421 can be arranged at the first pipeline 420. In a specific working process, when the first switch valve 421 is on, the air extraction mechanism 410 can extract at least a part of the air in the accommodation chamber through the first pipeline 420. Thus, the pressure in the accommodation chamber can be equal to the pressure in the inner chamber 110. When the first switch valve 421 is off, the pressure in the accommodation chamber can be maintained in the above state. The first switch valve 421 can be easy to operate to easily cause the pressure in the accommodation chamber to be equal to the pressure in the inner chamber 110.

[0049] In some embodiments, the first switch valve 421 can be located outside the chamber body 100 for easy control.

[0050] In embodiments of the present disclosure, as shown in FIG. 2, the air inflation device 500 includes an air inflation mechanism 510 and a second pipeline 520. The air inflation mechanism 510 can include, for example, a nitrogen gas supply mechanism. The air inflation mechanism 510 can be arranged outside of the inner chamber 110. The air inflation mechanism 510 can communicate with the accommodation chamber through the second pipeline 520. Thus, the second pipeline 520 can be configured to communicate the air inflation mechanism 510 with the accommodation chamber. In some embodiments, a first end of the second pipeline 520 can be located outside the inner chamber 110 and communicated with the air outlet of the air inflation mechanism 510. A second end of the second pipeline 520 can extend into the inner chamber 110 and communicate with the opening of the accommodation chamber. In order to ensure the airtightness, the first end of the second pipeline 520 can be sealed and connected to the air outlet of the air inflation mechanism 510, and the second end of the second pipeline 520 can be sealed and connected to the opening of the accommodation chamber to prevent the air leak from affecting the air inflation effect of the air inflation mechanism 510. In some embodiments, sealants can be provided between the first end of the second pipeline 520 and the air outlet of the air inflation mechanism 510 and between the second end of the second pipeline 520 and the opening of the accommodation chamber. Thus, a better sealing effect can be achieved to cause the air inflation mechanism 510 to have a better air inflation effect on the accommodation chamber.

[0051] In addition, the second pipeline 520 can also cause air inflation mechanism 510 to have a good installation flexibility. In some embodiments, through the extension effect of the second pipeline 520, the air inflation mechanism 510 can be mounted at a plurality of positions of the chamber body 100. In some embodiments, the second pipeline 520 can be a flexible pipe, which can further improve the installation flexibility of the air inflation mechanism 510.

[0052] Further, a second switch valve 521 can be arranged at the second pipeline 520. In a specific working process, when the second switch valve 521 is on, the air inflation mechanism 510 can inflate the accommodation chamber through the second pipeline 520 to cause the pressure in the accommodation chamber to be equal to the pressure in the inner chamber 110. When the second switch valve 521 is off, the pressure in the accommodation chamber can be maintained in the above state. The second switch value 521 can be easy to operate to easily cause the pressure in the accommodation chamber to be equal to the pressure in the inner chamber 110.

[0053] In some embodiments, the second switch valve 521 can be located outside the chamber body 100 for easy control.

[0054] The semiconductor reaction chamber of embodiments of the present disclosure further includes a pressure detection device 430. The pressure detection device 430 can communicate with the accommodation chamber. The pressure detection device 430 can be configured to detect the pressure in the accommodation chamber. In a specific working process, the pressure detection device 430 can display detected data to facilitate a user to control the air extraction mechanism 410 and the air inflation mechanism 510 to work. Thus, the pressure in the accommodation chamber can be equal to the pressure in the inner chamber 110. This method can facilitate the user to operate to easily adjust the pressure in the accommodation chamber to cause the pressure in the accommodation chamber to be equal to the pressure in the inner chamber 110.

[0055] The semiconductor reaction chamber of embodiments of the present disclosure can further include a mounting member 600. The mounting member 600 can be arranged in the lower electrode shell body 900. The base body 210 can be arranged at the mounting member 600. The mounting member 600 can facilitate the installation of the electrostatic chuck 200. Meanwhile, the mounting member 600 can include a mounting hole 610 communicating with the accommodation chamber.

[0056] The mounting hole 610 can be sealed and connected to the opening of the accommodation chamber. The air extraction device 400 can communicate with the accommodation chamber through the mounting hole 610. The air outlet of the air extraction device 400 and the mounting hole 610 can be sealed and connected to prevent air leakage from affecting the air extraction effect of the air extraction device 400. Thus, the mounting member 600 can cause the air extraction device 400 to easily communicate with the accommodation chamber to facilitate the installation of the above members.

[0057] Correspondingly, the air inflatable device 500 can also communicate with the accommodation chamber through the mounting hole 610. The air outlet of the air inflation device 500 and the mounting hole 610 can be sealed and connected to prevent the gas leakage from affecting the air inflation effect of the air inflation device 500. Thus, the mounting member 600 can make the air inflation device 500 easily communicate with the accommodation chamber to facilitate the installation of the above members.

[0058] If the pressure adjustment device includes the air extraction device 400 and the air inflation device 500, the air extraction device 400 and the air inflation device 500 can communicate with the accommodation chamber through two mounting holes 610, respectively.

[0059] Further, in some embodiments, the semiconductor reaction chamber of embodiments of the present disclosure further includes a connection flange 700. The connection flange 700 can be arranged on a side of the mounting member 600 away from the electrostatic chuck 200. The connection flange 700 can include an air channel 710. The air channel 710 can communicate with the mounting hole 610. The air channel 710 can be sealed and connected to the mounting hole 610. The air extraction device 400 can communicate with the air channel 710. The air outlet of the air extraction device 400 can be sealed and connected to the air channel 710. Thus, the air extraction device 400 can communicate with the accommodation chamber through the air channel 710 and the mounting hole 610 sequentially. With the connection flange 700, the installation of the functional wire can be facilitated, and the connection reliability between the air extraction device 400 and the accommodation chamber can be improved. Thus, the pressure adjustment effect can be improved in the accommodation chamber.

[0060] Similarly, the air inflation device 500 can also communicate with the gas channel 710. The air outlet of the inflation device 500 can be sealed and connected to the gas channel 710. Thus, the air inflation device 500 can communicate with the accommodation chamber through the gas channel 710 and the mounting hole 610 in sequence. With the connection flange 700, the installation of the functional wire can be facilitated, and the connection stability between the air inflation device 500 and the accommodation chamber can be improved. Thus, the pressure adjustment effect in the accommodation chamber can be further improved.

[0061] If the pressure adjustment device includes the air extraction device 400 and the air inflation device 500, two mounting holes 610 and two air channels 710 can be provided and arranged correspondingly.

[0062] In some embodiments, as shown in FIG. 2, in order to facilitate the functional wire 300 in the accommodation chamber to pass through, a wire hole 740 that communicates with the air channel 710 is formed at a sidewall of the connection flange 700. The functional wire 300 can pass through the wire hole 740. Thus, the functional wire 300 can be prevented from affecting the communication effect between the air extraction device 400 or the air inflation device 500 and the connection flange 700 when the functional wire 300 passes through the wire hole 740. In some embodiments, the functional wire 300 can be sealed and connected to the wire hole 740 to prevent the air leakage from affecting the air extraction or inflation effect.

[0063] In some embodiments, the pressure adjustment device including the air extraction device 400 and the air inflation device 500 and two accommodation chambers are taken as an example. As shown in FIG. 2, the first pipeline 420 of the air extraction device 400 and the second pipeline 520 of the air inflation device 500 communicate with each other through a connection pipeline 450. Thus, the air extraction mechanism 410 can communicate with the two air channels 710 through the first pipeline 420 and the connection pipeline 450 to extract air of the two accommodation chambers. Thus, the utilization rate of the air extraction device 400 can be improved. Similarly, the air inflation device 500 can communicate with the two air channels 710 through the second pipeline 520 and the connection pipeline 450 to inflate air to the two accommodation chambers. Thus, the utilization rate of the air inflation device 500 can be improved. In practical applications, another pipeline structure can be used to realize the communication between the air extraction device 400 and the plurality of accommodation chambers and the communication between the air inflation device 500 and the plurality of accommodation chambers.

[0064] In some embodiments, the semiconductor reaction chamber of embodiments of the present disclosure can further include a sealing ring (not shown in the figure). The sealing ring can be arranged between surfaces of the mounting member 600 and the connection flange 700 opposite to each other. The sealing ring can be arranged around the mounting hole 610. Thus, the air channel 710 and the mounting hole 610 can be sealed and connected through the sealing ring. Therefore, the sealing ring can cause the air channel 710 and the mounting hole 610 to have a good sealing effect to prevent the air from being leaked from a gap between the mounting member 600 and the connection flange 700. A quantity of sealing rings can be equal to a quantity of air channels 710 and mounting holes 610. The sealing rings can be arranged in a one-to-one correspondence with the air channels 710 and the mounting holes 610.

[0065] Further, to improve an installation effect of the sealing ring, an annular groove 620 can be formed on a side of the mounting member 600 facing the connection flange 700. The annular groove 620 can be arranged around the mounting hole 610. A part of the sealing ring can be located in the annular groove 620. Thus, the annular groove 620 can limit the position of the sealing ring to prevent the sealing ring from having an offset to affect the sealing effect between the air channel 710 and the mounting hole 610.

[0066] The connection flange 700 and the mounting member 600 can have a plurality of connection manners, such as bonding connection, snap connection, and fastening screw connection. In some embodiments, the semiconductor reaction chamber of embodiments of the present disclosure can further include a fastener screw. The connection flange 700 can include a body member 720 and a connection member 730 connected to each other. The sealing ring can be arranged between the surfaces of the mounting member 600 and the connection member 730 that are opposite to each other. The sealing ring can be arranged around the mounting hole 610. With reference to FIG. 5, the connection member 730 includes a first via 731, and the mounting member 600 includes a threaded hole. The fastener screw can pass through the first via 731 and can be connected to the threaded hole. Compared to other connection manners, using the fastener screw, the connection reliability between the connection flange 700 and the mounting member 600 can be improved. When the sealing ring is arranged between the connection flange 700 and the mounting member 600, by fastening the fastener screw, the sealing ring can be pressed to cause the air channel 710 and the mounting hole 610 to have a good sealing effect. In some embodiments, the sealing ring can be a flexible member. Thus, the sealing effect between the air channel 710 and the mounting hole 610 can be better improved.

[0067] In embodiments of the present disclosure, as shown in FIG. 3, the functional layer includes, for example, a ceramic layer 220 and a heating layer 230. In some embodiments, the ceramic layer 220 can be arranged over the heating layer 230. The heating layer 230 can be arranged over the base body 210. The ceramic layer 220, the heating layer 230, and the base body 210 can be fixedly connected in a bonding manner. Thus, as shown in FIG. 2 and FIG. 4, the heating layer 230 covers the end opening of the connection wire channel 211, and the heating layer 230 and the base body 210 enclose or surround an accommodation chamber. The functional wire 300 can include a control wire. An end of the control wire can be connected to a first apparatus 810. Another end of the control wire can pass through the connection wire channel 211 and can be electrically connected to the heating layer 230. The first apparatus 810 can control the heating layer 230 through the above control wire to the heating layer 230 to heat the wafer arranged on the surface of the ceramic layer 220. Thus, the control wire can realize electrical conduction between the heating layer 230 and the first apparatus 810 to facilitate the first apparatus 810 to control the heating layer 230 to heat the wafer. The first apparatus 810 can include, e.g., a heating power adjustment device and a microcontroller.

[0068] In some embodiments, when the electrostatic chuck 200 includes the ceramic layer 220, the heating layer 230, and the base body 210 connected in sequence, the connection method of the ceramic layer 220, the heating layer 230, and the base body 210 can be the same as the connection method in the above embodiment and is not be repeated. The functional wire 300 can include a detection wire. Correspondingly, the heating layer 230 can include a second via 231 that communicates with the connection wire channel 211. Thus, the second via 231 can communicate with the accommodation chamber. An end of the detection wire can be connected to a second apparatus 820. Another end of the detection wire can pass through the connection wire channel 211 and the second via 231 in sequence and can be in contact with the ceramic layer 220. Thus, the second apparatus 820 can include, for example, a temperature measurement sensor (or a temperature measurement sensor and a microcontroller). The above detection wire can be a detection connection wire of the temperature measurement sensor. The temperature measurement sensor can be, for example, a thermocouple or a temperature measurement optical fiber. The detection connection wire of the temperature measurement sensor can pass through the accommodation chamber to measure the temperature of the wafer.

[0069] The first apparatus 810 and the second apparatus 820 of embodiments of the present disclosure can be located outside the chamber body 100. An end of the functional wire 300 can be electrically connected to the first apparatus 810 and/or the second apparatus 820. Another end of the functional wire 300 can extend into the inner chamber to further pass through into the connection wire channel 211 to further be in contact with the functional layer. If the functional wire 300 includes the detection wire, e.g., the detection wire of the temperature measurement temperature, the functional layer being in contact with the functional wire 300 can refer to that the detection wire is in contact with the ceramic layer 220 of the functional layer. If the functional wire 300 includes the control wire, the functional layer being in contact with the functional wire 300 can refer to that the control wire is electrically connected to the heating layer 230 of the functional layer. In practical applications, different types of functional wires 300 can have a connection manner with the functional layer, which can be adaptively modified. The present disclosure does not limit the connection manner.

[0070] As illustrated above, when the inner chamber 110 is in a working state, such as in an etching process of a workpiece, the inner chamber 110 is usually maintained in a vacuum state. At this time, the air extraction device 400 can be controlled to turn on, thereby extracting the gas from the accommodation chamber. As such, the pressure in the accommodation chamber can also be arranged in a vacuum state. In a non-working state of the semiconductor reaction chamber, the pressure in the inner chamber 110 is usually maintained at atmospheric pressure. At this time, the air inflation device 500 can be controlled to turn on, thereby inflating the accommodation chamber. As such, the pressure in the accommodation chamber can also be kept at atmospheric pressure, enabling the pressure in the accommodation chamber to equal the pressure in the inner chamber 110. The inner chamber 110 is physically isolated from the accommodation chamber. Adjustment of the pressure in the accommodation chamber prevents unequal pressure between the accommodation chamber and the inner chamber 110 from exerting a separation force between the base body 210 and the functional layer, thereby preventing damage to the adhesion between the base body 210 and the functional layer. As a result, the connection stability between the base body 210 and the functional layer is improved, enhancing the service life of the electrostatic chuck 200.

[0071] FIG. 6 shows a schematic local cross-sectional diagram of another semiconductor reaction chamber. The semiconductor reaction chambers shown in FIGS. 2 and 6 have similar structures. The semiconductor reaction chamber shown in FIG. 6 has each part and each device of the semiconductor reaction chamber shown in FIG. 2. The main difference between the two reaction chambers is that the semiconductor reaction chamber shown in FIG. 6 has additional devices and functions, such as a chamber controller 910 and automation functions enabled by the chamber controller 910. The chamber controller 910 includes a memory device and a processor. The memory device is used to store computer programs. The processor is used to execute the computer programs to implement steps of methods for controlling the inner chamber and accommodation chamber. Optionally, the chamber controller 910 is connected to and controls the air extraction mechanism 410, the air inflation mechanism 510, and other sensing and controlling devices (e.g., the above mentioned devices) of the semiconductor reaction chamber shown in FIG. 6 via wired or wireless communication methods. The chamber controller 910 or the processor can control the pressure of the accommodation chamber through these extraction and inflation mechanisms and sensing and controlling devices.

[0072] In some embodiments, as shown in FIG. 6, the air inflation mechanism 510 contains a gas source 511 and a flow controller 512. The gas source 511 supplies an inflation gas to the accommodation chamber. The inflation gas includes an inert gas, e.g., nitrogen. The flow controller 512 is used to control the flow of the gas inputted into the accommodation chamber by adjusting the gas flow rate.

[0073] Optionally, a pressure sensor (not shown) can be mounted inside the inner chamber 110 to monitor the pressure there, while the pressure detection device 430 can be used to monitor the pressure in the accommodation chamber through another pressure sensor (not shown) mounted inside the accommodation chamber. When it is detected that the difference between the pressure in the inner chamber 110 and the pressure in the accommodation chamber is greater than a threshold value (e.g., 5%), the pressure in the accommodation chamber can be adjusted to make the pressure difference below the threshold value, balancing the pressure in the accommodation chamber and the pressure in the inner chamber 110. In some cases, the pressure in the accommodation chamber is adjusted manually. Optionally, the pressure in the accommodation chamber can be adjusted automatically through the chamber controller 910 and certain algorithms.

[0074] Optionally, a technician can monitor the pressure in the inner chamber 110 and the accommodation chamber continuously and adjust the pressure difference between the two chambers when there is a need. For example, when the pressure difference exceeds the threshold value, the technician operates the air extraction mechanism 410 and/or the air inflation mechanism 510 to reduce the pressure difference. The pressure in the accommodation chamber can be increased by supplying more gas via the air inflation mechanism 510, or lowered by extracting the gas through the air extraction mechanism 410, deceasing the pressure difference until the pressure difference is below the threshold value. Optionally, the semiconductor reaction chamber shown in FIG. 6 can have a detection mechanism to obtain the pressure difference between the two chambers and an alarming mechanism to alert the technician. When the pressure difference is beyond the threshold value, the alarming mechanism can emit alarm signals. For example, an interface or monitor of the semiconductor reaction chamber can show flashes of red light or a buzzer or beeper can generate audio alarm signals when the pressure difference goes beyond the threshold. The alarm signals urge the technician to act promptly to decrease the pressure difference.

[0075] Optionally, the chamber controller 910 can be arranged to monitor the pressure in the inner chamber 110 and the accommodation chamber continuously. The chamber controller 910 can be arranged to calculate the pressure difference between the two chambers and adjust the pressure difference automatically. When it is determined that the pressure difference between the two chambers exceeds the threshold value, the chamber controller 910 controls the air extraction mechanism 410 and/or the air inflation mechanism 510 to operate until the pressure difference falls below the threshold value. For example, when the pressure in the accommodation chamber is lower than that in the inner chamber 110, the chamber controller 910 can increase the pressure in the accommodation chamber by supplying an inert gas through the air inflation mechanism 510 to decease the pressure difference. When the pressure in the accommodation chamber is higher than that in the inner chamber 110, the chamber controller 910 can lower the pressure in the accommodation chamber by extracting the gas through the air extraction mechanism 410 to decrease the pressure difference. Optionally, the chamber controller 910 includes an alarming mechanism. When the pressure difference between the two chambers exceeds the threshold value and the chamber controller 910 fails to reduce the pressure difference, the alarming mechanism emits alarm signals. For example, the chamber controller 910 can show flashes of red light on a monitor or control a buzzer or beeper to generate audio alarm signals.

[0076] In some embodiments, during the operation of the semiconductor reaction chambers shown in FIGS. 2 and 6, the air extraction mechanism 410 is always in operation mode and the first switch valve 421 is open. As such, the air extraction mechanism 410 is maintained at a constant extraction state. The flow controller 512 is used to control the flow rate of an inert gas coming from the gas source 511. Because the air extraction mechanism 410 is maintained at the constant extraction state, when the flow rate of the inert gas is increased, the pressure inside the accommodation chamber becomes higher; and when the flow rate is decreased, the pressure inside the accommodation chamber becomes lower. Thus, the flow controller 512 can be utilized to adjust the pressure in the accommodation chamber. When a process is performed on a workpiece (e.g., a wafer), the pressure in the inner chamber 110 varies at different steps. The pressure in the inner chamber 110 is measured in real-time and used as a target pressure value for the accommodation chamber. The pressure in the accommodation chamber is obtained by the pressure detection device 430 and compared with the target pressure value. A technician can change the pressure in the accommodation chamber by adjusting the flow rate of the inert gas using the flow controller 512. The pressure in the accommodation chamber is adjusted to approach the target pressure value until the pressure difference between the two chambers is below a threshold value, such as 5%.

[0077] In some embodiments, the target pressure value is transmitted to the chamber controller 910. The chamber controller 910 also obtains a pressure value obtained in the accommodation chamber from the pressure detection device 430. If the pressure in the accommodation chamber is higher than the pressure in the inner chamber 110, the chamber controller 910 controls the flow controller 512 to reduce the flow rate, decreasing the pressure in the accommodation chamber. If the pressure in the accommodation chamber is lower than the pressure in the inner chamber 110, the chamber controller controls the flow controller 512 to increase the flow rate, making the pressure in the accommodation chamber higher. The chamber controller 910 keeps monitoring and comparing the pressure at the two chambers, and adjusting the flow controller 512 to maintain the pressure difference between the two chambers below the threshold value.

[0078] In some embodiments, in order to operate the semiconductor reaction chamber as shown in FIGS. 2 and 6 and solve the above technical problems, the present disclosure also provides a computer-readable storage medium. Computer programs are stored in the computer-readable storage medium. The computer programs, when executed by a processor, cause the processor to implement steps of the above-illustrated method, such as adjusting the pressure in the accommodation chamber, decreasing the pressure difference between the inner chamber 110 and the accommodation chamber, or generating an alarm signal when the pressure difference is higher than a threshold value.

[0079] Based on the semiconductor reaction chambers of embodiments of the present disclosure, the present disclosure further provides a semiconductor processing apparatus. The semiconductor processing apparatus of the present disclosure can include the semiconductor reaction chamber of embodiments of the present disclosure.

[0080] The above embodiments of the present disclosure mainly describe the differences between the various embodiments. As long as different optimization features of the various embodiments are not contradictory, the optimization features can be combined to form better embodiments, which are not repeated here.

[0081] The above descriptions are merely embodiments of the present disclosure and are not intended to limit the present disclosure. Various modifications and variations of the present disclosure are possible for those skilled in the art. Any modification, equivalent replacement, improvement and so on made within the spirit and principle of the present disclosure shall be within the scope of the claims of the present application.