A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the substrate through a gas supply unit on the substrate support unit, and generating a direct plasma in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, wherein a plurality of sub-steps are performed during the supplying of the oligomeric silicon precursor and the nitrogen-containing gas and the generating a direct plasma, and different plasma duty ratios are applied during the plurality of sub-steps.

Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

Devices and methods are disclosed, including transistors, semiconductor devices and systems. Example semiconductor devices and methods include interconnect structures with lateral isolation structures around a vertical conductor. Devices and methods are shown where the isolation structures are located with a staircase configuration in a memory device with an array of vertical memory strings.

Exemplary processing methods may include performing a silicon-containing atomic layer deposition (ALD) process. The silicon-containing ALD process may deposit a silicon-containing material in a feature defined in a substrate disposed in a processing region of a semiconductor processing chamber. The methods may include providing an oxygen-containing precursor to a processing region. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may at least partially reduce a presence of a seam in the silicon-containing material.

Exemplary processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate including a plurality of layers of a silicon-containing material may be housed within the processing region. Adjacent layers of the silicon-containing material may be vertically spaced apart to define a plurality of lateral gaps. One or more features may extend through the plurality of layers of the silicon-containing material and into the substrate. The methods may include depositing a flowable oxygen-containing material on the substrate in the plurality of lateral gaps and in the one or more features extending into the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the hydrogen-containing precursor while applying a bias power. The contacting may reduce a thickness of the flowable oxygen-containing material.

A method for forming a semiconductor device is disclosed herein. The method includes forming a gradient oxide layer on a surface of a substrate, the etch rate of the gradient oxide layer varies along a thickness of the gradient oxide layer, forming a trench through the gradient oxide layer and into the substrate, the trench at least partially defined by a sidewall of the substrate, wherein the surface and the sidewall are connected to form a corner of the substrate, removing a portion of the gradient oxide layer adjacent the corner, wherein a portion of the surface of the substrate is exposed as a result of removing the portion of the gradient oxide layer, and performing an etching process on the exposed corner of the substrate to form a rounded corner that transitions from the surface of the substrate to the sidewall of the substrate.

A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.

A semiconductor structure and a method of forming is provided. The semiconductor structure includes nanostructures separated from one another and stacked over a substrate, a gate stack wrapping around the nanostructures, and a dielectric fin structure laterally spaced apart from the nanostructures by the gate stack. The dielectric fin structure include a lining layer and a fill layer nested within the lining layer. The lining layer is made of a carbon-containing dielectric material, and a carbon concentration of the lining layer varies in a direction from the gate stack to the lining layer.