The present disclosure relates to an apparatus for injecting a gas, an apparatus for processing a substrate, and a method for depositing a thin-film, and more specifically, to an apparatus for injecting a gas to deposit a thin-film by injecting a gas to a substrate, an apparatus for processing a substrate, and a method for depositing a thin-film. An apparatus for injecting a gas in accordance with an exemplary embodiment includes: a first electrode in which a first gas supply path and a second gas supply path are separately defined and which has first and second gas supply holes connected to the first and second gas supply paths, respectively; and a second electrode which is electrically insulated from and spaced apart from the first electrode and has a plurality of openings arranged alternately with the first and second supply holes.

Disclosed is a method of depositing thin film, the method comprising: supplying an adduct precursor to the inside of a chamber in which a substrate including at least one gap feature is placed so that the adduct precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adduct precursor to form the thin film and fill the gap feature, wherein the adduct precursor is formed by mixing 1 to 5 moles of a compound and 1 to 5 moles of a metal compound.

Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1. ##STR00001## In Formula 1, A.sup.1 is a heterocyclic group including one or more nitrogen, and R.sup.1 is hydrogen or an alkyl group of 16 carbon atoms. R.sup.2 and R.sup.3 may be each independently an alkyl group of 16 carbon atoms.

Embodiments of the disclosure relate to methods of selectively depositing polysilicon after forming a flowable polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiOx) layer on the bottom, and a silicon (Si) layer or a second silicon oxide (SiOx) layer is deposited on the first silicon oxide (SiOx) layer.

A manufacturing method of a semiconductor device includes following steps. A semiconductor substrate including a first portion in a low voltage device region and a second portion in a middle voltage device region is provided. A first gate structure and a second gate structure are formed above the first portion and the second portion, respectively. An implantation process is performed for forming a first source/drain doped region in the first portion and a second source/drain doped region in the second portion concurrently. A first oxide layer and a second oxide layer are located above the first portion and the second portion during the implantation process, respectively. The first source/drain doped region is formed under the first oxide layer. The second source/drain doped region is formed under the second oxide layer. A thickness of the second oxide layer is greater than or substantially equal to that of the first oxide layer.

A semiconductor structure includes: a semiconductor substrate; a gate dielectric layer over the semiconductor substrate; and a gate electrode over the gate dielectric layer. The gate dielectric layer includes a first portion and a second portion thinner than the first portion, wherein the gate electrode is over the first portion and the second portion, and the first portion includes a third portion including nitrogen and enclosed by the first portion.

A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a gap within the surface of the substrate with reduced or no seam formation.

Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.

A method for fabricating semiconductor devices is disclosed. The method includes forming a stack over a substrate. The method includes forming a hardmask layer over the stack, the hardmask layer comprising a first tungsten containing sub-layer, and at least one compressive sub-layer and at least one tensile sub-layer. The method includes forming a patternable layer over the hardmask layer. The method includes etching the hardmask layer according to the patternable layer.

Exemplary semiconductor processing methods may include providing one or more first etchant precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A plurality of pairs of silicon oxide material and polysilicon material may be disposed on the substrate. The methods may include forming plasma effluents of the one or more first etchant precursors and contacting the substrate with the plasma effluents of the one or more first etchant precursors to selectively etch silicon oxide material. The methods may include providing one or more second etchant precursors to the processing region, forming plasma effluents of the one or more second etchant precursors, and contacting the substrate with the plasma effluents of the one or more second etchant precursors to selectively etch polysilicon material. A temperature within the processing region may be greater than or about 0 C.