The present disclosure provides methods of depositing dielectric films in processing chambers. The methods include disposing a substrate on a susceptor disposed within a processing chamber. A first precursor-containing gas mixture is provided into the processing chamber. The first precursor-containing gas mixture includes a boron-containing precursor and a carrier gas selected from the group consisting of argon, nitrogen, and helium. A second precursor-containing gas mixture is provided into the processing chamber.

A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from 2.70 to 3.50, an elastic modulus of from 6 to 36 GPa, and an at. % carbon from 10 to 36 as measured by XPS.

Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more features along the substrate. The methods may include providing an oxygen-containing precursor. The methods may include annealing the silicon-containing material with the oxygen-containing precursor. The annealing may cause the silicon-containing material to expand within the one or more features. The methods may include repeating one or more of the operations to iteratively fill the one or more features on the substrate.

A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Embodiments include semiconductor processing methods to form dielectric films on semiconductor substrates are described. The methods may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The methods may include providing an inert precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The methods may include depositing a silicon-containing material on the substrate.

Methods for forming a silicon-containing layer on a surface of substrate are disclosed. Exemplary method comprises providing an oxygen-containing reactant into a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form a silicon-containing layer.

Methods for filling a gap on a substrate with a carbon-containing material are disclosed. Exemplary method includes providing a substrate comprising a gap into a reaction chamber and executing a plurality of deposition cycles. Each deposition cycle comprises providing a first precursor into the reaction chamber in vapor phase and providing a reactive species into the reaction chamber, wherein the first precursor comprises carbon.

A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.

A method of selectively depositing a dielectric material on a metal surface relative to a non-metal surface is disclosed. An exemplary method includes using a first reactant to selectively form desired terminal functional groups on the non-metal surface and selectively reacting a second reactant with the terminal functional groups to selectively form an organic layer on the non-metal surface.

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about 20 C. to about 100 C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.