Devices and methods for forming a chip package structure including a package substrate, a first adhesive layer attached to a top surface of the package substrate, and a beveled stiffener structure attached to the package substrate. The beveled stiffener structure may include a bottom portion including a tapered top surface, in which a bottom surface of the bottom portion is in contact with the first adhesive layer, a second adhesive layer attached to the tapered top surface, and a top portion including a tapered bottom surface, in which the tapered bottom surface is in contact with the second adhesive layer. The tapered top surface and the tapered bottom surface have a taper angle between 5 degrees and 60 degrees with respect to a top surface of the package substrate.

A package structure includes a circuit substrate, a semiconductor package, a first ring structure and a second ring structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The first ring structure is attached to the circuit substrate and surrounding the semiconductor package, wherein the first ring structure includes a central opening and a plurality of corner openings extending out from corners of the central opening, the semiconductor package is located in the central opening, and the plurality of corner openings is surrounding corners of the semiconductor package.

Disclosed aspects include a semiconductor die including a substrate having a semiconductor surface including circuitry. A top metal layer is above the semiconductor surface including top metal lines that are electrically connected through a metal stack including metal interconnects that electrically connect to the circuitry. The top metal lines are configured in a primary orientation that collectively represents at least 50% of a total length of the top metal lines in a first direction. The top metal layer includes bond pads exposed from a passivation layer. The metal features are positioned lateral to and not directly electrically connected to the top metal layer and/or are positioned on the passivation layer. At least a majority of a total area of the metal features is not over metal interconnects. The metal features have a length direction oriented in a second direction that is at least essentially perpendicular relative to the primary orientation.

A semiconductor device includes: a substrate including a main chip area and a scribe lane area, wherein chip circuits are disposed in the main chip area, and the scribe lane area surrounds the main chip area; a first insulating layer disposed on the substrate; a second insulating layer disposed on the first insulating layer and in which a plurality of guard rings are embedded; a dielectric layer disposed on the second insulating layer; and a third insulating layer disposed on the dielectric layer, wherein the scribe lane area includes a first area and a second area, wherein the first area is adjacent to the main chip area based on a decreasing point of a thickness of the third insulating layer, wherein the plurality of guard rings includes a first guard ring disposed in the first area and a second guard ring disposed in the second area.

An interconnect board includes a thermally enhanced cavity substrate, an electronic component, a crack-inhibiting dielectric layer and a circuitry layer. The cavity in the thermally enhanced cavity substrate is defined by a heat conduction surface of a first conductive island and inner surrounding sidewalls of a stress-relief resin layer. The thermally enhanced cavity substrate further includes electrically conductive posts as vertical electrical conduction channel. The electronic component in the cavity is attached onto the heat conduction surface and covered and laterally surrounded by the crack-inhibiting dielectric layer. The circuitry layer can provide electrical connections between the electronic component and the electrically conductive posts. For applications involving electrical components with high thermal demand (such as power chips), the first conductive island may further include a metallized segment in contact with the bottom surface of the electronic component to improve thermal management.

A method of making an interconnect substrate, comprising disposing an embedded component and at least one tracking identifier in a substrate core, and planarizing the substrate core to form a planar surface, forming a conductive layer over a frontside planar surface, disposing a layer of dielectric over the frontside planar surface, the embedded component, and the conductive layer, rotating the substrate core such that a back surface of the substrate core is configured for processing, and forming a conductive layer over the back surface of the substrate core.

An electronic device includes a circuit structure, a first electronic unit and an encapsulation layer. The first electronic unit is disposed on the circuit structure. The encapsulation layer surrounds the first electronic unit. The circuit structure includes at least one first insulating layer and at least one second insulating layer. The at least one first insulating layer is disposed between the first electronic unit and the at least one second insulating layer. A stiffness of the at least one first insulating layer is less than a stiffness of the at least one second insulating layer.

A semiconductor package structure includes a base having a first surface and a second surface opposite thereto, wherein the base comprises a wiring structure, a first electronic component disposed over the first surface of the base and electrically coupled to the wiring structure, a second electronic component disposed over the first surface of the base and electrically coupled to the wiring structure, wherein the first electronic component and the second electronic component are separated by a molding material, a first hole and a second hole formed on the second surface of the base, and a frame disposed over the first surface of the base, wherein the frame surrounds the first electronic component and the second electronic component.

A semiconductor package, as a semiconductor package mounted on a circuit board, includes including: a body portion including a semiconductor chip, and a first surface and a second surface opposite to each other; and a structure including n insulating layers stacked on at least one of the first surface and the second surface of the body portion, wherein the semiconductor package has a predetermined target coefficient of thermal expansion (CTE), and the n insulating layers and the body portion have a thickness and a CTE satisfying a condition that an effective CTE of the semiconductor package becomes equal to the predetermined target CTE.

The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate; and a seal ring region enclosing a circuit region disposed over the substrate. The seal ring region further includes a fin ring protruding from the substrate having a first width; an isolation ring disposed over the substrate and adjacent to the fin ring; a gate ring disposed over the fin ring having a second width, wherein the second width is less than the first width; an epitaxial ring disposed between the fin ring and the isolation ring; and a contact ring lands on the epitaxial ring and the isolation ring. Each of the fin ring, the isolation ring, the epitaxial ring, and the contact ring extends parallel to each other and fully surrounds the circuit region to form a closed loop.