A semiconductor guide pin is disclosed. Specific implementations may include a heatsink, one or more substrates coupled together, one or more pressfit pins coupled to the one or more substrates, and two or more guide pins coupled to the one or more substrates, where the two or more guide pins may have a height greater than the one or more pressfit pins.

A semiconductor package includes a package substrate, a semiconductor stack on the package substrate, a passive device on the package substrate and spaced apart from the semiconductor stack, and a stiffener on the package substrate and extending around an outer side of the semiconductor stack. The stiffener includes a first step surface extends over the passive device. A width of a bottom surface of the stiffener is smaller than a width of a top surface of the stiffener.

A semiconductor package may include a substrate including a plurality of vias and a chip stack on the substrate. The chip stack may include a plurality of semiconductor chips, wherein a first semiconductor chip is a lowermost one of the plurality of semiconductor chips in the chip stack, chip pads of the first semiconductor and substrate pads of the substrate are bonded to each other, and the chip pads and the substrate pads are integrally formed of the same metal material, the first semiconductor chip includes a corner region adjacent to a corner of the first semiconductor chip, and a center region excluding the corner region, the substrate includes a trench on an upper surface of the substrate, and the trench extends along a boundary between the corner region and the center region of the first semiconductor chip.

Implementations described herein relate to various semiconductor device assemblies. In some implementations, an apparatus includes a dielectric layer having a first material that is an insulative material, a conductive layer having a second material that is a conductive material, and a stimulus-responsive strain layer having a third material that deforms in response to an applied stimulus.

A package structure includes an embedded component circuit structure layer, a signal interconnection structure layer, a power structure layer, and an electronic component layer. The embedded component circuit structure layer includes at least one embedded component and has a first surface and a second surface opposite to each other. The signal interconnection structure layer is disposed on the first surface and is electrically connected to the embedded component circuit structure layer. The power structure layer is disposed on and electrically connected to the signal interconnection structure layer. The electronic component layer includes a plurality of electronic components, is disposed on the second surface, and is electrically connected to the embedded component circuit structure layer. A coefficient of thermal expansion of the signal interconnection structure layer is higher than a coefficient of thermal expansion of the electronic component layer and a coefficient of thermal expansion of the power structure layer.

A semiconductor device includes a wiring substrate having an upper surface, a semiconductor chip mounted on the wiring substrate, and a stiffener ring fixed onto the wiring substrate via a plurality of adhesive layers. The upper surface is a quadrangular shape, and first and second center lines and first and second diagonal lines can be drawn. The stiffener ring has four extension portions and four corner portions. Adhesive layers include first, second, third and fourth adhesive layers that respectively overlap with the four extension portions and that are arranged at a portion overlapping with one of the first center line and the second center line. Also the adhesive layers include fifth, sixth, seventh, and eighth adhesive layers that respectively overlap with the four corner portions and that are arranged at a portion overlapping with one of the first diagonal line and the second diagonal line.

A semiconductor module includes a plate-shaped base made of metal, and a frame-shaped housing made of a resin composition, the housing having an adhering portion adhering to an outer peripheral portion of the base, wherein in plan view, an outer periphery of the housing includes first sides facing each other and second sides facing each other, a portion of the housing corresponding to each of the second sides is provided with at least one hole for screwing a heat dissipating member, the adhering portion includes a plate-shaped first adhering portion extending along each of the first sides, in plan view, the first adhering portion overlaps an outer periphery of the base, and inequality T.sub.1<0.42L.sub.1.sup.2 is satisfied, when T.sub.1 is T.sub.1 meters that denote a thickness of the first adhering portion, and L.sub.1 is L.sub.1 meters that denote a length of the first adhering portion.

An electronic device and method of manufacturing the same are provided. The electronic device includes a temperature-sensitive structure, a first multilayer structure, and a second multilayer structure. The temperature-sensitive structure has a first surface and a second surface opposite to the first surface. The first multilayer structure is disposed under the first surface of the temperature-sensitive structure and configured to cause a first residual stress in response to a first temperature change. The second multilayer structure is disposed over the second surface and configured to cause a second residual stress in response to a second temperature change. The second residual stress substantially eliminates the first residual stress so that the temperature-sensitive structure, the first multilayer structure and the second multilayer structure constitute a less-temperature-sensitive structure.

A semiconductor package may include a first semiconductor chip including a first area, a second area, an optical conversion device that is in the first area, and vertical wires that are in the second area, the optical conversion device being configured to receive an optical signal and convert it into an electrical signal, a first dummy chip on the first semiconductor chip and at least partially overlapping with the first area, a second semiconductor chip at least partially overlapping with the second area, a wiring layer between the first and second semiconductor chips and including first wiring patterns that connect the vertical wires and the second semiconductor chip, and second wiring patterns that at least partially overlap with the first dummy chip, and a second dummy chip on the first dummy chip and on the second semiconductor chip.

A method of manufacturing a semiconductor element includes preparing integrated circuit chips, obtaining warpage information of each of the integrated circuit chips, deforming at least a portion of a chip stress control pattern of each of the integrated circuit chips according to the warpage information of each of the integrated circuit chips, laminating the integrated circuit chips on a carrier substrate with adhesive layers interposed therebetween, curing the adhesive layers, and removing chip scribe lane areas from the integrated circuit chips.