A substrate processing apparatus includes a gas-exhaust path to which a predetermined exhaust force is applied, and a plurality of substrate processing units configured to share the gas-exhaust path. Group correlations are predetermined as correlations in regard to a plurality of processing information pieces which correspond to each of the plurality of substrate processing units and represent work or a state relating to supply and exhaust of gas, and a management device that manages the substrate processing apparatus acquires a plurality of processing information pieces corresponding to each of the plurality of substrate processing units, and detects a state prior to a state in which the plurality of substrate processing apparatuses become abnormal, based on comparison information obtained when correlations in regard to a plurality of processing information pieces relating to exhaust of gas among a plurality of processing information pieces are compared with the group correlations.

A processing apparatus which processes a substrate is disclosed. The processing apparatus comprises: a plurality of processing chambers which process the substrate in an atmosphere of a desired processing gases; a plurality of tank units provided for each of the plurality of processing chambers, the plurality of tank units including a plurality of tanks configured for temporarily storing the processing gases; and one or more gas boxes supplying the processing gases to the processing chambers via the tank units. The substrate processing apparatus allows the number of gas boxes to be reduced.

A method for providing a substrate coating comprises transferring a substrate to an enclosed ink jet printing system; printing organic material in a deposition region of the substrate using the enclosed ink jet printing system, the deposition region comprising at least a portion of an active region of a light-emitting device on the substrate; loading the substrate with the organic material deposited thereon to an enclosed curing module; supporting the substrate in the enclosed curing module, the supporting the substrate comprising floating the substrate on a gas cushion established by a floatation support apparatus; and while supporting the substrate in the enclosed curing module, curing the organic material deposited on the substrate to form an organic film layer.

Pulsed gas delivery is obtained with mass flow control using a thermal mass flow sensor and control valve. The controller is augmented for pressure control with a downstream pressure sensor. In separate control modes of operation, the control valve is controlled in response to the flow sensor during pulse gas delivery mode and controlled in response to the downstream pressure sensor during pressure control mode of operation.

A substrate processing apparatus includes a chamber in which a substrate is disposed, an external air supply pipe connected to a first side of the chamber and extending into the chamber, a gas supply pipe disposed inside the external air supply pipe, a mesh filter disposed inside the external air supply pipe and between an end of the gas supply pipe and an end of the external air supply pipe, and a plurality of first discharge pipes connected to a second side of the chamber which is opposite to the first side and extending into the chamber.

Disclosed are a gas distribution module capable of effectively adjusting the recombination rate of radical components, a substrate processing method, and a substrate processing apparatus. The gas distribution module configured to supply a gas to a processing region in a substrate processing apparatus using plasma includes an upper electrode, an ion blocker disposed under the upper electrode to form a plasma generation region, a showerhead disposed under the ion blocker to form a recombination region, and a purge gas supply unit configured to supply a purge gas to the recombination region.

A technique includes a valve body rotatably supported about an axis intersecting with a direction of a gas flow in a flow path for a process gas at least partially formed by a pipe, heated to a higher temperature than the pipe, and configured such that an emissivity of at least a portion of a surface of the valve body is set to be equal to or lower than an emissivity of an inner surface of the pipe; and a driver configured to rotate the valve body to change an opening degree of the flow path.

The techniques described herein relate to a method for delivering a gas including: forming a gas stream including an oxidant gas or oxidant vapor using an oxidant gas or oxidant vapor source of a system; transporting the gas stream from the oxidant gas or oxidant vapor source to another location of the system using a metal conduit; and heating the metal conduit using a heating apparatus coupled to the metal conduit. The metal conduit can include a metal alloy, wherein at least 90% of the metal alloy is: zirconium; hafnium; tantalum; a combination of zirconium and hafnium; a combination of zirconium and tantalum; a combination of hafnium and tantalum; or a combination of zirconium, hafnium, and tantalum. A gas or vapor delivery system can include an oxidant gas or oxidant vapor source; a metal conduit including the metal alloy; and a heating apparatus coupled to the metal conduit.

A semiconductor vapor etching device is disclosed. The device can include an intermediate chamber between a vapor source and a reaction chamber. Etch reactant vapor can be pulsed from the intermediate chamber to the reaction chamber to etch a substrate.

A device for recycling sulfuric acid is provided. A container has an inner space. An inlet is located on the first side of the container for introducing a liquid containing sulfuric acid and hydrogen peroxide through a pump. An outlet is located on the second side of the container for exhausting the treated liquid from the container, and the first side and the second side are opposite sides. IR lamp and UV lamp are located in the inner space of the container for making contact with the liquid. IR radiation emitted from the IR lamp and UV radiation emitted from the UV lamp decompose the hydrogen peroxide in the liquid to water and oxygen. The IR radiation heats the liquid to 90 C. to 130 C., and the oxygen is exhausted through the air hole.