The present invention addresses the problem of providing a mixed gas supply device that can safely and stably supply a mixed gas containing a film forming material gas. The present invention provides a mixed gas supply device that supplies a mixed gas containing at least one kind of gas of a film forming material by adjusting the concentration of the film forming material in the mixed gas, comprising: a raw material container (2) that contains the film forming material; a first beater (3) that heats the raw material container (2); a carrier gas-introduction path (L1) that introduces a carrier gas into the raw material container (2); a mixed gas-lead-out path (L2) that leads the mixed gas out of the raw material container (2); a second heater (6) that heats the mixed gas lead-out path (L2); a pressure adjusting device (8) that is located in the mixed gas lead-out path (L2) and that adjusts the pressure in the raw material container (2); a mixed gas-measuring device (9) that is located in the mixed gas lead-out path (L2) on the primary or secondary side of the pressure adjusting device (8) and that measures the concentration or the flow rate of the mixed gas; and one or more buffer tanks (10) that are located in the mixed gas lead-out path (12).

A substrate processing apparatus includes a substrate processing unit for processing a substrate by discharging a chemical liquid to the substrate; a chemical storage unit connected to the substrate processing unit by a chemical liquid supply line and a chemical liquid recovery line; and a liquid replenishment unit including an evaporation measurement member for measuring the amount of evaporation of water contained in the chemical liquid, and a water supply member for supplying water to the chemical liquid.

An apparatus for processing a substrate may include a process chamber providing a processing space in which a predetermined process may be performed on the substrate, and a supporting device contacting the process chamber and supporting the process chamber. The supporting device may include a supporting chamber providing a supporting space for supporting components of the process chamber and a supply member supplying a fluid into the supporting space.

An apparatus capable of controlling a liquid may provide a source vessel to contain the liquid and an inlet tube for flowing the liquid into the source vessel. The inlet tube may extend into the source vessel and may be arranged to direct the flowing liquid onto a sidewall of the source vessel.

This method of cleaning a semiconductor wafer can reliably reduce the LPD count on the wafer surface. The method includes a first step of measuring a contact angle of a surface of a semiconductor wafer under conditions in which a volume of a droplet dripped on the surface differs, a second step of calculating a ratio of change in a measured value of the contact angle to change in the volume of the droplet based on a relationship between the volume of the droplet and the measured value of the contact angle under the conditions, a third step of determining whether pretreatment is necessary for the semiconductor wafer surface based on the ratio, a fourth step of performing the pretreatment on the semiconductor wafer surface according to the determining in the third step, and a fifth step of subsequently performing single-wafer spin cleaning on the semiconductor wafer surface.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes: a first process chamber having a first treating space therein; a second process chamber having a second treating space therein; and an exhaust unit configured to exhaust atmospheres of the first treating space and the second treating space, in which the exhaust unit includes an integrated exhaust line in which a pressure reduction unit is installed, a first exhaust line configured to connect the first process chamber and a first point of the integrated exhaust line, a second exhaust line configured to connect the first process chamber and a second point of the integrated exhaust line, and an interference alleviation unit configured to alleviate exhaust interference between the first process chamber and the second process chamber.

With respect to a gas supply mechanism for supplying a raw material gas obtained by vaporizing a raw material, the gas supply mechanism includes an inner container configured to contain the raw material; an outer container having a space in which the inner container is accommodated such that the inner container is relatively displaceable and allowing the raw material gas generated from the raw material in the inner container to flow out to an outside; and a detector configured to detect an index related to a weight of the inner container. The space of the outer container is depressurized to a vacuum atmosphere lower than an atmospheric pressure before the detector detects the index related to the weight of the inner container.

A processing system is provided for capturing and recycling process gases from semiconductor manufacturing operations. The system includes a process chamber configured to process a substrate and an exhaust system coupled to the process chamber and configured to remove process effluent from the process chamber. An abatement system including a first metal-organic framework (MOF) container is coupled downstream of the exhaust system, where the first MOF container is configured to capture a first gas species of the process effluent.

According to one embodiment, a chemical supply device includes: a bubbler configured to contain a chemical solution which is used in a semiconductor process and to receive an input gas for vaporizing the chemical solution into an output gas; a constant-temperature bath configured to contain the bubbler and to adjust a temperature of the chemical solution; a valve module fluidically connected with the bubbler and configured to provide channels for the chemical solution, the input gas, and the output gas; a level sensor configured to detect a remaining level of the chemical solution; a controller; and a memory configured to store a program for operating the controller, and the controller is configured to determine a target flow rate of the input gas to cause a flow rate of the output gas to have a designated flow rate, based on the remaining level of the chemical solution.

There is provided a technique that includes a processor configured to be capable of executing a process recipe to process a substrate; and a pressure controller configured to be capable of controlling a pressure of a process chamber, in which the substrate is processed, by adjusting an opening degree of a pressure regulating valve provided to an exhaust line of the process chamber, wherein when controlling the pressure of the process chamber, the pressure controller adjusts the opening degree of the pressure regulating valve and outputs information of the opening degree, and wherein while receiving the information of the opening degree from the pressure controller and monitoring an open/close state of the pressure regulating valve, the processor is configured to, when the information of the opening degree is a preset value, be capable of determining whether or not opening/closing of the pressure regulating valve happens.