A substrate processing apparatus includes: a processing module including a process container in which at least one substrate is processed and a substrate loading port installed at a front side of the processing module, a utility system including a supply system which supplies a processing gas into the first process container and a surface of the first utility system is connected or arranged close to a rear surface of the processing module; a vacuum-exhauster behind the processing module and configured to exhaust an inside of the process container; an exhaust pipe that brings the process container into fluid communication with the vacuum-exhauster; a pipe housing which supports the exhaust pipe; and a first vibration-damping fastener connecting the vacuum-exhauster and the pipe housing. The exhaust pipe includes a first flexible portion that allows displacement of the exhaust pipe's end, and the vacuum-exhauster and pipe housing are installed at a floor.

Disclosed are a laser annealing system and a method of fabricating a semiconductor device using the same. The laser annealing system having multiple laser devices may include a stage, on which a substrate is loaded, a light source generating a plurality of laser beams to be provided to the substrate, an optical delivery system disposed between the light source and the stage and used to deliver the laser beams, a homogenizing system disposed between the optical delivery system and the stage, the homogenizing system including an array lens including a plurality of lens cells which allow the laser beams to pass therethrough and homogenize the laser beams, and an imaging optical system disposed between the homogenizing system and the stage to image the laser beams on the substrate.

A method of manufacturing a semiconductor device includes positioning a substrate on a hot plate in a chamber, and heating the substrate on the hot plate to volatilize contaminant particles on the substrate. The method further includes coupling the chamber to an external pump line through a locking mechanism. The locking mechanism is configured to couple a first adapter connecting to the chamber with a second adapter connecting to the external pump line. The method also includes detecting a coupling status between the first adapter and the second adapter using a sensor, and maintaining the locking mechanism based on the coupling status.

A system includes one or more semiconductor processing chambers, and a processing fluid supply system which includes an input portion configured to receive a first fluid from a first fluid source, and a heated flow portion configured to deliver a heated processing fluid including the first fluid to the one or more semiconductor processing chambers. A waste system is configured to receive hot waste fluid from the heated flow portion and/or the one or more semiconductor processing chambers. A heat pump includes a source loop and a load loop, the source loop being thermally coupled to an external heat source. A first heat exchanger includes a first supply-side flow path in fluid communication with the input portion, and a first heat delivery-side flow path in fluid communication with the load loop such that the heat exchanger heats the first fluid before the first fluid enters the heated flow portion.

A system includes one or more semiconductor processing chambers, and a processing fluid supply system including an input portion configured to receive a first fluid from a first fluid source, a heater fluidly coupled to the input portion and configured to heat the first fluid, and a heated flow portion fluidly coupled to the heater and configured to deliver a heated processing fluid including the first fluid heated by the heater to the one or more semiconductor processing chambers. A waste system is configured to receive hot waste fluid from the heated flow portion and/or a semiconductor processing chamber. A heat exchanger includes a supply-side flow path in fluid communication with the input portion and a heat delivery-side flow path in fluid communication with the waste system. The heat exchanger is configured to transfer thermal energy from the waste system to the input portion to heat the first fluid.

Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy vacuum.

A holding device for a fracturable assembly, which is intended to separate along a fracture plane defined between an upper part and a lower part of the fracturable assembly, comprises at least two protrusions configured to keep the fracturable assembly suspended in a substantially horizontal holding position, the protrusions being intended to be located between the upper part and the lower part, against a peripheral chamfer of the upper part; a support located below and at a distance from the protrusions so as to gravitationally receive the lower part when the fracturable assembly is separated, and to keep it at a distance from the upper part held by the protrusions.

A substrate treating apparatus includes: a spin chuck supporting a substrate; a rinse liquid supply unit supplying a rinse liquid; and a bowl member surrounding the spin chuck, wherein the bowl member includes: a first bowl including an inclined surface inclined downward in an outward direction and having an upper surface of which at least a portion has a curvature; and an upper base disposed on the first bowl, a space between the upper surface of the first bowl and a lower surface of the upper base forms a first flow passage and at least a portion of the first flow passage is formed in an arc shape along the upper surface of the first bowl, and the rinse liquid is supplied toward the inclined surface of the first bowl through the first flow passage.

Provided are methods and structures for keeping the integrity of layers deposited on a semiconductor wafer through a thermal cycle. Deposition of a second backside layer, or a cap, with an internal stress opposite to a first backside layer may be used to reduce bow shift of a wafer during a thermal cycle. The first backside layer may have a tensile internal stress or a compressive internal stress. The second backside layer has an internal stress opposite to the first backside layer. Each of the backside layers may be deposited by a backside deposition apparatus.

According to one aspect of the technique of the present disclosure, there is provided a temperature control method including: (a) controlling a current heater supply power such that a predicted temperature column calculated according to a prediction model stored in advance approaches a future target temperature column, wherein the future target temperature column is updated in accordance with a current temperature, a final target temperature and one of a temperature convergence ramp rate and a designated temperature convergence time.