There is provided a technique capable of capable of preventing a substrate from being metal-contaminated by a component constituting a furnace opening. According to one aspect thereof, there is provided a furnace opening structure including: an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube; a lower inlet structure connected to the upper inlet structure via a second seal; and a fixing structure connected to the upper inlet structure and configured to fix the first protrusion, wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.

A substrate processing system including a substrate processing apparatus, a transport apparatus, and a controller. The substrate processing apparatus includes a substrate processing chamber, a substrate support, and an edge ring having a first horizontal surface and a first inclined surface. The transport apparatus includes a transport chamber, a transport arm, an optical sensor, a lens structure, and an actuator that moves the lens structure in a horizontal direction between a first horizontal position and a second horizontal position. The controller determines a consumption amount of the first horizontal surface based on an output of the optical sensor when the lens structure is at the first horizontal position, and determines a consumption amount of the first inclined surface based on an output of the optical sensor when the lens structure is at the second horizontal position.

The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

According to an embodiment of the present invention, a method for processing a substrate through a heater that heats the substrate to perform a semiconductor process, the method comprising: inputting, into a correlation formula of at least one independent variable, which is a parameter related to the heater, and a dependent variable including a measured temperature of the heater, a measurement value corresponding to the independent variable, and calculating a predicted temperature of the heater; and applying a Kalman filter to the predicted temperature to calculate an estimated temperature.

A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.

Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

The present invention relates to a bonding apparatus for a power terminal of a heating plate, for bonding the power terminal supplying power to a heating wire of a substrate. The bonding apparatus for a power terminal of a heating plate comprises: a chamber; a stage which is disposed in an inner space of the chamber and on which the substrate is placed; an upper press portion disposed in the inner space of the chamber to face the stage, provided to be vertically movable, and having a terminal fixing portion configured to fix the power terminal; and an elevating driver configured to move the upper press portion up and down, wherein the terminal fixing portion further includes a magnetic holder configured to hold the power terminal by a magnetic force.

A semiconductor device assembly and associated methods are disclosed herein. The semiconductor device assembly includes (1) a substrate having a first side and a second side opposite the first side; (2) a first set of stacked semiconductor devices at the first side of the substrate; (3) a second set of stacked semiconductor devices adjacent to one side of the first set of stacked semiconductor devices; (4) a third set of stacked semiconductor devices adjacent to an opposite side of the first set of stacked semiconductor devices; and (5) a temperature adjusting component at the second side and aligned with the second set of stacked semiconductor devices. The temperature adjusting component is positioned to absorb the thermal energy and thereby thermally isolate the second set of stacked semiconductor devices from the first set of stacked semiconductor devices.

Disclosed is a waste gas treatment apparatus for semiconductor and display processes, the apparatus including: a pre-treatment unit having an inlet and an outlet formed therein, and configured to spray a cleaning solution to waste gas introduced through the inlet to primarily treat in the waste gas; a reaction unit configured to simultaneously treat fluorine compounds and nitrous oxide (N.sub.2O) in waste gas discharged from the pre-treatment unit; a post-treatment unit configured to spray a cleaning solution to waste gas discharged from the reaction unit to secondarily treat in the waste gas; and a heat exchange unit installed between the pre-treatment unit and the reaction unit.