Design and construction of high interconnection density, minimal loss I/O channels comprising embedded passive networks that preserve signal integrity at signaling frequencies above 1 GHz, preferably above 10 GHz, to improve memory-processor bandwidths.

A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.

A semiconductor assembly includes a top substrate and a base substrate attached to top and bottom electrode layers of a semiconductor device, respectively. The top substrate includes an electrode connection plate thermally conductible with and electrically connected to the top electrode layer of the semiconductor device and vertical posts protruding from the electrode connection plate and electrically connected to the base substrate. The base substrate includes an electrode connection slug embedded in a dielectric layer and thermally conductible with and electrically connected to the bottom electrode layer of the semiconductor device and first and second routing circuitries deposited on two opposite surfaces of the dielectric layer, respectively, and electrically connected to each other.

An electronic device comprises an electronic package with a glass core. The glass core includes a first surface and a second surface opposite the first surface, at least one through-glass via (TGV) extending through the glass core from the first surface to the second surface and including an electrically conductive material, and wherein the at least one TGV includes a first portion having a first sidewall and a second portion that includes a second sidewall, wherein the first sidewall includes seed metallization and the second sidewall excludes the seed metallization.

A semiconductor package and a manufacturing method are provided. The semiconductor package includes a semiconductor die laterally covered by an insulating encapsulation, a first redistribution structure overlying the insulating encapsulation and a back surface of the semiconductor die, a second redistribution structure underlying the insulating encapsulation and an active surface of the semiconductor die opposite to the back surface, active through insulating vias (TIVs) penetrating through the insulating encapsulation, and dummy features. The semiconductor die is electrically coupled to the first redistribution structure through the second redistribution structure and the active TIVs. Each of the dummy features includes a dummy TIV laterally covered by the insulating encapsulation, the dummy TIVs are disposed along package edges in a top view, and the dummy features are electrically floating.

A method of forming a semiconductor device is provided. The method includes forming an interposer including a plurality of conductive vias, each conductive via having a first end exposed at a first major side of an interposer substrate and a second end exposed at a second major side of the interposer substrate. A semiconductor die is mounted on the first major side of the interposer substrate. An encapsulant encapsulates the semiconductor die and portions of the first major side of the interposer substrate. A redistribution layer structure is formed over the second major side of the interposer substrate such that the semiconductor die interconnected with the redistribution layer structure by way of the interposer.

A substrate is disclosed. In one embodiment, the substrate comprises a substrate core including a plurality of through holes located therethrough, a plurality of metal pins aligned in the plurality of through holes, and at least one layer deposited on at least one of top and bottom surfaces of the substrate core. In one embodiment, the plurality of metal pins are aligned with the plurality of through holes such that each of the plurality of metal pins extends at least to both the top and bottom surface of the substate core. In some embodiments, the deposited at least one layer is deposited after the plurality of metal pins have been aligned in the through holes of the substrate core.

A method of forming a semiconductor device includes the following steps. A die and a first through via aside the die are formed. An encapsulant is formed to encapsulate the die and the first through via, wherein the encapsulant is physically connected to a sidewall of the first through via and a sidewall of the die. A warpage controlling layer is formed over the encapsulant and the die. A first conductive connector is formed on the first through via to electrically connect to the first through via.

A method of manufacturing an electronic package is provided and includes disposing a circuit member and a plurality of electronic elements on opposite sides of a carrier structure having circuit layers respectively, so that any two of the plurality of electronic elements can be electrically connected to each other via the circuit layers and the circuit member, where a vertical projected area of the carrier structure is larger than a vertical projected area of the circuit member, such that the circuit member is free from being protruded from side surfaces of the carrier structure. Therefore, the circuit member replaces a part of circuit layers of the carrier structure to reduce the difficulty of fabricating the circuit layers in the carrier structure.

A method includes: forming an interposer die using a substrate, the interposer die including a plurality of conductive vias in the substrate; bonding the interposer die to a first redistribution layer (RDL); encapsulating the interposer die; forming a second RDL over the interposer die on a side opposite to the first RDL; bonding a first semiconductor die with one of the first RDL and the second RDL; and encapsulating the first semiconductor die.