A package structure includes a circuit substrate, a semiconductor package, a lid structure, a passive device and a barrier structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The lid structure is disposed on the circuit substrate covering the semiconductor package. The lid structure is attached to the circuit substrate through an adhesive material. The passive device is disposed on the circuit substrate in between the semiconductor package and the lid structure. The barrier structure is separating the passive device from the lid structure and the adhesive material, and the barrier structure is in contact with the adhesive material.

A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.

A semiconductor device enables obtainment of an attachment state of a cover member in order to obtain good handleability and to prevent foreign matter from entering the inside of a package, and enables the cover member to be easily removed in order to solve problems such as ghost and flare caused by the presence of the cover member. The semiconductor device includes: a substrate; a semiconductor element mounted on the substrate; a cover member covering the semiconductor element from above; a frame supporting the cover member relative to the substrate; and a cover holding portion detachably holding the cover member relative to at least a part of the frame.

A semiconductor module includes a plate-shaped base made of metal, and a frame-shaped housing made of a resin composition, the housing having an adhering portion adhering to an outer peripheral portion of the base, wherein in plan view, an outer periphery of the housing includes first sides facing each other and second sides facing each other, a portion of the housing corresponding to each of the second sides is provided with at least one hole for screwing a heat dissipating member, the adhering portion includes a plate-shaped first adhering portion extending along each of the first sides, in plan view, the first adhering portion overlaps an outer periphery of the base, and inequality T.sub.1<0.42L.sub.1.sup.2 is satisfied, when T.sub.1 is T.sub.1 meters that denote a thickness of the first adhering portion, and L.sub.1 is L.sub.1 meters that denote a length of the first adhering portion.

A device package comprising an integrated cooling assembly comprising a semiconductor device and a cold plate directly bonded to the semiconductor device. The cold plate comprises a top portion, sidewalls extending downwardly from the top portion to a backside of the semiconductor device, an inlet opening, and an outlet opening. The top portion, the sidewalls, and the backside of the semiconductor device collectively define a coolant chamber volume therebetween. The inlet opening and the outlet opening are disposed in the top portion and are in fluid communication with the coolant chamber volume. The inlet opening is disposed above a hotspot region of the semiconductor device.

An electronic component is provided. The component includes: a base member, a Peltier element; a semiconductor element placed on a placement surface of the base member via the Peltier element; and a frame member arranged so as to surround a side surface of the semiconductor element. A first electrode provided in the semiconductor element is connected, via a conductive wire, to a second electrode provided in the frame member, and the base member and the frame member are bonded by a bonding member having a lower thermal conductivity than the base member.

A semiconductor package according to an embodiment includes a substrate; a protective layer disposed on the substrate; a first adhesive member disposed on the protective layer and having an open loop shape along a circumferential direction of an upper surface of the protective layer; and a cover member disposed on the first adhesive member, wherein a lower surface of the cover member includes: a first lower surface that contacts the first adhesive member, and a second lower surface that does not contact the first adhesive member, and the protective layer includes a first opening that vertically overlaps the second lower surface of the cover member and does not vertically overlap the first adhesive member.

An optical component including: a substrate on which an optical element is mounted; a transparent sealing member disposed above the substrate and configured to seal the optical element; and a bonded portion in which a plurality of metal films are laminated, and which is configured to bond the transparent sealing member and the substrate. The bonded portion includes: one or more stress relaxation layers constituted by one or more metal films having a Young's modulus of less than or equal to 150 GPa, the one or more stress relaxation layers having a total thickness of greater than or equal to 1.2 m; and a diffusion prevention layer disposed on each of both sides in a thickness direction of each of the one or more stress relaxation layers, and configured to prevent diffusion of metal constituting the stress relaxation layer.

A method includes forming a plurality of dielectric layers, forming a lower portion of a seal ring including a plurality of metal layers, each extending into one of the plurality of dielectric layers, depositing a first passivation layer over the plurality of dielectric layers, forming an opening in the first passivation layer, forming a via ring in the opening and physically contacting the lower portion of the seal ring, and forming a metal ring over the first passivation layer and joined to the via ring. The via ring and the metal ring form an upper portion of the seal ring. The metal ring includes an edge portion having a zigzag pattern. The method further includes forming a second passivation layer on the metal ring, and performing a singulation process to form a device die, with the seal ring being proximate edges of the device die.

A method includes forming a plurality of dielectric layers, forming a lower portion of a seal ring including a plurality of metal layers, each extending into one of the plurality of dielectric layers, depositing a first passivation layer over the plurality of dielectric layers, forming an opening in the first passivation layer, forming a via ring in the opening and physically contacting the lower portion of the seal ring, and forming a metal ring over the first passivation layer and joined to the via ring. The via ring and the metal ring form an upper portion of the seal ring. The metal ring includes an edge portion having a zigzag pattern. The method further includes forming a second passivation layer on the metal ring, and performing a singulation process to form a device die, with the seal ring being proximate edges of the device die.