A package structure includes a circuit substrate, a semiconductor package, a lid structure, a passive device and a barrier structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The lid structure is disposed on the circuit substrate covering the semiconductor package. The lid structure is attached to the circuit substrate through an adhesive material. The passive device is disposed on the circuit substrate in between the semiconductor package and the lid structure. The barrier structure is separating the passive device from the lid structure and the adhesive material, and the barrier structure is in contact with the adhesive material.

An interconnected semicondcutor subassembly structure and formation thereof. The interconnected semicondcutor subassembly structure includes an interconnect structure, and first and second semicondcutor dies bonded to respective portions of a top surface of the interconnect structure. The interconnected semicondcutor subassembly structure further includes an underfill layer formed within a first gap located between a bottom surface of the first semiconductor die and the first portion the top surface of the interconnect structure, formed within a second gap located between the bottom surface of the second semiconductor die and the second portion of the top surface of the interconnect structure, and formed within a first portion of a third gap located between the first semicondcutor die and the second semicondcutor die. A top surface of the underfill layer formed within the first portion of the third gap located between the first and second semicondcutor dies has a concave meniscus shape.

Provided is a package structure, including a substrate, a chip on the substrate in a flip-chip manner, the chip including a circuit layer, and a side heat dissipator on a side of the chip, the side heat dissipator comprising a heat conduction material, wherein the side heat dissipator is electrically connected to the circuit layer.

An electronic package is provided, in which an electronic module and at least one support member are disposed on a substrate structure having a circuit layer, such that the stress on the substrate structure is dispersed through the at least one support member to eliminate the problem of stress concentration and prevent the substrate structure from warping.

A semiconductor device package and a method of manufacturing a semiconductor device package are provided. The semiconductor device package includes a carrier, a first component, a second component, and a protective element. The first component and the second component are arranged side by side in a first direction over the carrier. The protective element is disposed over a top surface of the carrier and extending from space under the first component toward a space under the second component. The protective element includes a first portion and a second portion protruded oppositely from edges of the first component by different distances, and the first portion and the second portion are arranged in a second direction angled with the first direction.

This document discloses techniques, apparatuses, and systems relating to a package substrate for a semiconductor device. A semiconductor device assembly is described that includes a packaged semiconductor device having one or more semiconductor dies coupled to a package-level substrate. The package-level substrate has a first surface at which first contact pads are disposed in a first configuration. The packaged semiconductor device is coupled with an additional package-level substrate that includes a second surface having second contact pads disposed in the first configuration and a third surface having third contact pads disposed in a second configuration different from the first configuration. The additional package-level substrate includes circuitry coupling the second contact pads the third contact pads to provide connectivity at the third contact pads. In doing so, an adaptively compatible semiconductor device may be assembled.

A semiconductor device includes a first redistribution structure, a first semiconductor package, a second semiconductor package, an encapsulation layer, a first thermal interface material (TIM) layer, and a second TIM layer. The first semiconductor package and the second semiconductor package are respectively disposed on the first redistribution structure and laterally disposed aside with each other. The encapsulation layer encapsulates and surrounds the first semiconductor package and the second semiconductor package. The first semiconductor package and the second semiconductor package are respectively exposed from the encapsulation layer. The first TIM layer and the second TIM layer are respectively disposed on back surfaces of the first semiconductor package and the second semiconductor package. A top surface of the first TIM layer and a top surface of the second TIM layer are coplanar with a top surface of the encapsulation layer.

A semiconductor device includes a wiring substrate having an upper surface, a semiconductor chip mounted on the wiring substrate, and a stiffener ring fixed onto the wiring substrate via a plurality of adhesive layers. The upper surface is a quadrangular shape, and first and second center lines and first and second diagonal lines can be drawn. The stiffener ring has four extension portions and four corner portions. Adhesive layers include first, second, third and fourth adhesive layers that respectively overlap with the four extension portions and that are arranged at a portion overlapping with one of the first center line and the second center line. Also the adhesive layers include fifth, sixth, seventh, and eighth adhesive layers that respectively overlap with the four corner portions and that are arranged at a portion overlapping with one of the first diagonal line and the second diagonal line.

A semiconductor device has a first RDL substrate with first conductive pillars formed over a first surface of the first RDL substrate. A first electrical component is disposed over the first surface of the first RDL substrate. A hybrid substrate is bonded to the first RDL substrate. An encapsulant is deposited around the hybrid substrate and first RDL substrate with the first conductive pillars and first electrical component embedded within the encapsulant. A second RDL substrate with second conductive pillars formed over the second RDL substrate and second electrical component disposed over the second RDL substrate can be bonded to the hybrid substrate. A second RDL can be formed over a second surface of the first RDL substrate. A third electrical component is disposed over a second surface of the first RDL substrate. A shielding frame is disposed over the third electrical component.

A chip package structure is provided. The chip package structure includes a substrate. The chip package structure includes a chip over the substrate. The chip package structure includes a first heat conductive layer between the heat-spreading wall structure and the chip. The chip package structure includes a second heat conductive layer over the chip and surrounded by the first heat conductive layer. The chip package structure includes a heat-spreading lid over the substrate and covering the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid is bonded to the substrate, the heat-spreading wall structure, the first heat conductive layer, and the second heat conductive layer.