A memory device includes a memory chip stacked over a base chip. The base chip includes a temperature control circuit configured to control, based on information including an internal temperature of the memory device, at least one of a time between consecutive column commands when consecutive column operations are performed and a time between consecutive row commands when consecutive row operations are performed.

A semiconductor package includes a first package having a first semiconductor chip, a second semiconductor chip and a core member including a through-hole. At least one of the first and second semiconductor chips is disposed in the through-hole. An encapsulant is disposed in the through-hole. A first redistribution layer is disposed above the core member and is electrically connected to the first and second semiconductor chips. A second redistribution layer is disposed under the core member and electrically connects the first and second semiconductor chips with an external PCB. Core vias penetrate the core member and electrically connect the first and second redistribution layers. A second package is disposed on the first package and includes a third semiconductor chip. A plurality of first electrical connection structures electrically connects the first and second packages. A plurality of second electrical connection structures electrically connects the semiconductor package with the external PCB.

In an embodiment, a device includes: a die stack over and electrically connected to an interposer, the die stack including a topmost integrated circuit die including: a substrate having a front side and a back side opposite the front side, the front side of the substrate including an active surface; a dummy through substrate via (TSV) extending from the back side of the substrate at least partially into the substrate, the dummy TSV electrically isolated from the active surface; a thermal interface material over the topmost integrated circuit die; and a dummy connector in the thermal interface material, the thermal interface material surrounding the dummy connector, the dummy connector electrically isolated from the active surface of the topmost integrated circuit die.

Various aspects of this disclosure provide a semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising a stacked die structure and a method of manufacturing thereof.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

Methods, systems, and devices for memory die bonding in stacked semiconductor systems are described. A semiconductor device may be formed to include a stack of memory dies. Each memory die of the stack may be bonded with at least one other memory die of the stack. The semiconductor device may include a dielectric material in contact with a portion of a first memory die of the stack, with the dielectric material extending beyond at least one lateral boundary of the first memory die of the stack. The semiconductor device may also include one or more molding materials formed over the stack of memory dies and over the dielectric material, with the one or more molding materials spanning a lateral dimension of the dielectric material and in contact with a portion of at least one memory die of the stack.

Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.

A memory device is provided. The memory device includes a first structure and a second structure stacked on the first structure in a vertical direction. The first structure includes a first substrate, peripheral circuitry, an auxiliary memory cell array, a first insulating layer, and a plurality of first bonding pads. The second structure includes a second substrate, a main memory cell array, a second insulating layer, and a plurality of second bonding pads. The plurality of first bonding pads are in contact with the plurality of second bonding pads, respectively.

A three-dimensional (3D) stacked memory package is described. The 3D stacked memory package includes a first plurality of stacked memory dies. The 3D stacked memory package also includes a first base die stacked on the first plurality of stacked memory dies. The 3D stacked memory package further includes a package substrate supporting the first plurality of stacked memory dies. The 3D stacked memory package also includes a first plurality of through silicon vias (TSVs) extending between the first plurality of stacked memory dies and a first compute block on the first base die. The 3D stacked memory package further includes a first set of wire-bonds coupled between the package substrate and a first physical IO interface (PHY) on the first base die.

An electronic package technology is disclosed. A first active die can be mountable to and electrically coupleable to a package substrate. A second active die can be disposed on a top side of the first active die, the second active die being electrically coupleable to one or both of the first active die and the package substrate. At least one open space can be available on the top side of the first active die. At least a portion of a stiffener can substantially fill the at least one open space available on the top side of the first active die.