The disclosed device includes a bottom die layer comprising a bottom die and a top die layer positioned on the bottom die layer and comprising a plurality of top dies and at least one gap between two of the plurality of top dies. The device also includes a cover encapsulating the bottom die layer and the top die layer and comprising an inlet and an outlet for a fluid channel, wherein the fluid channel includes the at least one gap. Various other methods, systems, and computer-readable media are also disclosed.

A system comprises: an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a power switch including a drain terminal, a source terminal, and a gate terminal; and a controller configured to detect a change in current at the source terminal of the power switch using a complex impedance of a metal trace connected to the source terminal of the power switch, and control a gate control signal to the gate terminal based on the detected change in current.

A cooling device including a rectangular top plate in a plan view having a front surface on which a semiconductor module is disposed and a rear surface having a sidewall connection region, a flow pass region, and an outer edge region. The flow pass region includes a cooling region and first and second communicating regions that sandwich the cooling region therebetween from a short-side direction of the top plate. The sidewall connection region surrounds an outer periphery of the flow pass region. The outer edge region is outside of the sidewall connection region and closer to an edge of the top plate than is the flow pass region. The cooling region has a first thickness, and the outer edge region has a second thickness that is greater than the first thickness.

The semiconductor package includes a lower package including a lower package substrate and a lower semiconductor device disposed on the lower package substrate, and an upper package including an upper package substrate disposed on the lower package in a first direction and an upper semiconductor device disposed on the upper package substrate, and the upper package substrate includes a wiring structure on which the upper semiconductor device is mounted, and a heat sink disposed so that at least a portion overlaps the wiring structure in at least one of the first direction and a second direction perpendicular to the first direction and including a heat radiation pattern, wherein the heat radiation pattern comprises an insulator and a heat radiator in a repeated alternating pattern and wherein the lower semiconductor device overlaps at least a portion of the wiring structure and the portion of the heat sink in the first direction.

A device package comprising an integrated cooling assembly comprising a semiconductor device and a cold plate directly bonded to the semiconductor device. The cold plate comprises a top portion, sidewalls extending downwardly from the top portion to a backside of the semiconductor device, an inlet opening, and an outlet opening. The top portion, the sidewalls, and the backside of the semiconductor device collectively define a coolant chamber volume therebetween. The inlet opening and the outlet opening are disposed in the top portion and are in fluid communication with the coolant chamber volume. The inlet opening is disposed above a hotspot region of the semiconductor device.

A semiconductor module includes a cooler, a plurality of semiconductor devices, and a capacitor. The cooler includes a housing having a receiving portion and a hollow portion that is disposed externally around the receiving portion as viewed in a first direction. The housing has a first surface, a second surface, and a third surface on which the plurality of semiconductor devices are respectively mounted. Each of the first surface, the second surface, and the third surface faces away from the receiving portion with respect to the hollow portion in a direction orthogonal to the first direction. The first surface, the second surface and the third surface each have a different normal direction. At least a part of the capacitor is housed in the receiving portion.

A power module includes: a first substrate having an outer surface and an inner surface; a semiconductor die coupled to the inner surface of the first substrate; a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate; and a first electrically conductive spacer coupled to inner surface of the first substrate and to the inner surface of the second substrate.

An integrated cooling assembly comprising a semiconductor device and a cold plate directly bonded to the semiconductor device. The cold plate comprises a top portion, sidewalls and a divider extending downwardly from the top portion to a backside of the semiconductor device, an inlet opening; and an outlet opening. The top portion, the sidewalls, the divider and the backside of the semiconductor device collectively define a first coolant channel and a second coolant channel extending laterally between the inlet opening and the outlet opening. A channel width of the first coolant channel in a direction parallel to the backside of the semiconductor device is greater than a channel width of the second coolant channel in in the same direction; and a portion of the first coolant channel is disposed above a hotspot region of the semiconductor device.

The present disclosure in general relates to the field of heat sinks (e.g. microchannel heat sinks). The present disclosure is further directed towards a microchannel heat sink for applications in microchips. The microchannel heat sink comprises a base and a plurality of microchannel units extending from the base. The plurality of microchannel units are arranged in parallel and at regular intervals on the base. Each microchannel unit comprises two or more pin-fins. Each pin-fin comprises a triply periodic minimal surface (TPMS) lattice structure. The present disclosure also relates to pin-fins comprising triply periodic minimal surface (TPMS) lattice structure.

A system includes: an inverter configured to convert DC power to AC power, wherein the inverter includes: a power module including: a first substrate, a second substrate including a source plane and a gate plane separated from the source plane by a full trench, the source plane including a step trench, and the gate plane including an electrical connection through the second substrate to a gate input connection of the power module, a semiconductor die disposed between the first substrate and the second substrate, the step trench formed in a portion of the source plane corresponding to an edge of the semiconductor die, and the semiconductor die including a gate connected to the gate plane, and a sinter element disposed between the semiconductor die and the second substrate to connect the semiconductor die to the second substrate; a battery; and a motor.