Patent classifications
H10W70/465
Semiconductor module for a power semiconductor device
A conductive member constituting a wiring structure includes a first bonding section bonded to an electronic component, a second bonding section bonded to a connection target for the electronic component, and a raised section that protrudes upward from the first bonding section and is connected to the second bonding section. The conductive member has a wire member passage through which a wire member passes, and which is provided in at least a part of the raised section. The wire member passage enables the wire member to be disposed along the raised section from the first bonding section to the second bonding section such that the wire member intersects a surface of the raised section.
Semiconductor device and method of manufacturing the same
A semiconductor device includes: a first semiconductor chip mounted on a chip mounting portion via a first bonding material; and a second semiconductor chip mounted on the first semiconductor chip via a second bonding material. The first semiconductor chip includes: a protective film; and a first pad electrode exposed from the protective film in a first opening portion of the protective film. The second semiconductor chip is mounted on the first pad electrode of the first semiconductor chip via the second bonding material. The second bonding material includes: a first member being in contact with the first pad electrode; and a second member interposed between the first member and the second semiconductor chip. The first member is a conductive bonding material of a film shape, and the second member is an insulating bonding material of a film shape.
Semiconductor device and method of manufacturing the same
Reliability of a semiconductor device is improved. The semiconductor device includes a clip which is electrically connected to a main-transistor source pad via a first silver paste and is connected to a lead via a second silver paste. The clip has a first part with which the first silver paste is in contact, a second part with which the second silver paste is in contact, and a third part positioned between the first part and the second part. A protruding member is formed on a surface of the main-transistor source pad, and the first part is in contact with the protruding member.
STRUCTURE AND METHOD FOR FABRICATING THE STRUCTURE
A structure includes at least one ball, at least one bump and at least one route. The at least one route is configured to couple the at least one ball to the at least one bump. The at least one route comprises a plurality of first route edges and a plurality of second route edges, and an angle between one of plurality of first route edges and one of plurality of second route edges is approximately equal to an angle between another one of plurality of first route edges and another one of plurality of second route edges.
Semiconductor device package with vertically stacked passive component
In a described example, an apparatus includes: a package substrate with conductive leads; a semiconductor die mounted to the package substrate, the semiconductor die having a first thickness; electrical connections coupling bond pads on the semiconductor die to conductive leads on the package substrate; brackets attached to the package substrate spaced from the semiconductor die and extending away from the package substrate to a distance from the package substrate that is greater than the first thickness of the semiconductor die; and mold compound covering the package substrate, the semiconductor die, the brackets, and the semiconductor die to form a semiconductor device package having a board side surface and a top surface opposite the board side surface, and having portions of the brackets exposed from the mold compound on the top surface of the semiconductor device package to form mounts for a passive component.
ELECTRONIC PACKAGE WITH SURFACE CONTACT WIRE EXTENSIONS
An electronic package includes an electronic component including terminals, a plurality of surface contacts, at least some of the surface contacts being electrically coupled to the terminals within the electronic package, a mold compound covering the electronic component and partially covering the surface contacts with a bottom surface exposed from the mold compound, and a plurality of wires extending from exposed surfaces of the surface contacts, each of the wires providing a solderable surface for mounting the electronic package at a standoff on an external board.
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
A semiconductor package including a first lead comprising a first surface and a second surface that is opposite to the first surface, at least one semiconductor chip that is placed on the first surface of the first lead, a connecting structure body that is connected to the first lead, and a molding layer configured to cover the first lead and the semiconductor chip. The first lead comprises a recess that is formed on the second surface of the lead, and the connecting structure body is placed in the recess. The semiconductor chip, the first lead, and the connecting structure body are electrically connected to each other.
SEMICONDUCTOR ARRANGEMENT
A semiconductor arrangement includes first and second controllable semiconductor devices forming a half-bridge arrangement, each controllable semiconductor device including a control electrode and a controllable load path between a first load electrode and a second load electrode. At least one gate driver is configured to generate one or more control signals for one or more of the controllable semiconductor devices. The first controllable semiconductor device is arranged on and electrically coupled to a first lead frame of a plurality of lead frames. The second controllable semiconductor device is arranged on and electrically coupled to a second lead frame of the plurality of lead frames. The controllable semiconductor devices and the at least one gate driver are arranged in a molded package. Each lead frames is partly covered by the molded package and has at least one surface or section that is not covered by the molded package.
Ball bonding for semiconductor devices
A semiconductor device includes a semiconductor die having a die surface, in which the die surface includes a bond pad. A ball bond has a distal surface and flattened-disk shape extending from the distal surface and terminating in a proximal surface spaced apart from the distal surface. The distal surface is coupled to the bond pad and a channel extends a depth into the proximal surface surrounding a central portion of the proximal surface. A bond wire extending from the central portion of the proximal surface, in which the channel is spaced apart from and surrounds the bond wire.
Method of manufacturing semiconductor devices and corresponding semiconductor device
A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.